• Proceedings of the KSRS Conference
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• 2000.04a
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• pp.137-142
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• 2000

본 논문에서는 풀밭으로 덮힌 지역의 초고주파 대역 편파별 후방 산란을 분석하는데 있어서 Radiative Transfer 이론의 첫 번째 해를 이용하였다. 풀밭지역에서의 잎은 사각형 형태의 resistive sheet 으로 모델화 시키고, 잎의 크기와 방향성은 불규칙적으로 흩어져 있다고 가정하였다. 땅에서의 흙의 수분 함유량과 표면 거칠기도 고려하였다. 이러한 지역에서의 후방 산란 계수는 풀밭 지역과 레이더 요소들에 따라 각각 다른 계산 결과를 나타낸다. 측정은 15 GHz 대역의 레이더 시스템을 사용하여 풀 층에서의 산란 계수를 측정하고 풀 층에서의 산란 모델을 이용하여 계산 결과와 측정값을 비교하였고 이 모델을 이용하여 Visual-Basic을 이용한 사용자 프로그램인 TSM(Total Scattering Model)을 제작하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.7
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• pp.3474-3481
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• 2013

In this work, a new high frequency transmission line structure combined with defected ground structure (DGS) and artificial dielectric substrate (ADS) structure is proposed. DGS patterns give add the additional inductance to transmission lines and results in the increased characteristic impedance for a given line width. To the contrary, ADS presents increased capacitance and reduced line impedance. So both play a role in reducing the length of transmission lines commonly, but in preserving the line impedance complementarily. This means that the length of transmission lines can be reduced furtherly by DGS and ADS without a critical change of line width compared to the cases when one of DGS and ADS is used only. As examples, $35{\sim}100{\Omega}$ transmission lines having DGS and ADS are designed, fabricated, measured, and compared to the simulation results. A good agreement between the simulated and measured line impedances is presented. In addition, the physical lengths of the proposed transmission lines are only 55.4~76.9% of those of the normal microstrip lines for the same electrical lengths.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.39 no.1
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• pp.76-83
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• 2011

This paper focuses on the thermal design of a signal processor in Micro-Wave Seeker. High temperature environment and ESS(Environmental Stress Screening) test condition should be considered in designing a signal processor. First, we performed the thermal analysis to know conditions under which a signal processor is thermally reliable. As a result of thermal analysis, we found that adopting heat transfer block to the thermally fragile components is most efficient, because the heat transfer block can control the thermal loads of the individual components. Next, we verified this solution by numerical simulation and experiment and concluded that thermal reliability of a signal processor can be achieved. Maximum temperature difference between numerical simulation and experiment is about $2^{\circ}C$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.11
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• pp.1291-1298
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• 2007

A novel 1:4 unequal wilkinson power divider using rectangular-shaped defected ground structure(DGS) in double layered substrate is proposed for removing the ground problem of DGS in packaging. Rectangular-shared DGS produces the transmission line having much higher characteristic impedance than standard microstrip line. The proposed unequal divider is composed of DGS and double layered substrate in order to be free from the ground problem of DGS patterns in packaging in metal housings. The second substrate is attached to the first substrate which contains DGS pattern on its ground plane at the bottom side to form the double layered substrate. In order to show the validity of the proposed DGS in the double layered substrate, a 1:4 unequal power divider is designed and measured. The predicted and measured performances are shown with an excellent agreement between them.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.5
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• pp.827-834
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• 2020

In this paper, a third-order harmonic mixer is designed using frequency multiplier theory for the microwave airborne radar. Unlike the basic mixer design method, the gate bias voltage, at which the third-harmonic component of the Local frequency (LO) is the maximum, is selected using a frequency multiplier theory to maximize the third-harmonic mixing component at the intermediate frequency (IF). The proposed harmonic mixer was designed and manufactured using a commercial GaAs MESFET device in a plastic package, and it was possible to improve the high conversion loss, circuit complexity, high cost, and manufacturing complexity of the existing microwave mixer. The harmonic mixer using the proposed design method has a -8 ~ -10 dB conversion loss by pumping 11.5 GHz LO with a +5 dBm level when operating from 33.0 GHz to 36.0 GHz and the 1-dB gain compression point (P1dB) of 0 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.1
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• pp.61-70
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• 2008

This paper presents the flexible MEMS transmitter based on flexible printed circuit board or FPCB, which can be transformed to arbitrary shape. The FPCB is suitable to fabricate light weight and small size modules with the help of its thin thickness. Moreover a module based on FPCB can be attached on the arbitrary curved surface due to its flexible enough to be lolled up like paper. In this paper, the flexible MEMS transmitter integrated on FPCB for a short-distance sensor network which is based on orthogonal frequency division multiplexing(OFDM) communication system is proposed. The active device of the proposed flexible MEMS transmitter is fabricated on InGaP/GaAs HBT process which has been used for power amplifier design to take advantages of high linear and high efficient characteristics. Moreover, the passive devices such as the filter and signal lines are integrated and fabricated on the FPCB board. The performance of the fabricated flexible MEMS transmitter is analyzed with EVM characteristics of the output signal.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.331-340
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• 2010

3D fluid based numerical modelling is done for a VHF multi hollow cathode array plasma enhanced chemical vapor deposition system. In order to understand the fundamental characteristics of it, Ar plasma is analyzed with a condition of 40 MHz, 100 Vrf and 1 Torr. For hole array of 6 mm diameter and 20 mm inter-hole distance, plasma is well confined within the hole at an electrode gap of 10 mm. The peak plasma density was $5{\times}10^{11}#/cm^3$ at the center of the hole. When the substrate was assumed at ground potential, electron temperature showed a peak at the vicinity of the grounded walls including the substrate and chamber walls. The reaction rate of metastable based two step ionization was 10 times higher than the direct electron impact ionization at this condition. For $H_2$, the spatial localization of discharge is harder to get than Ar due to various pathways of electron impact reactions other than ionization.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.2
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• pp.171-178
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• 1998

Generally, the output matching circuit has the most influence to the output power of oscillator and existing method for output matching has difficulty for making the optimum output matching circuit because the matching has to be done nearby the infinite impedance area of the Smith Chart. In this paper, it is studied for the output matching circuit of the microwave oscillator to get the maximum output power. The maximum output point can be found by adjusting the position of moving short in the Tuner while the oscillator is operating after connect the 3-dB coupler Tuner to the oscillator without output matching circuit. To design the oscillator for the maximum output power can be done easily with the microstrip line which is realized from the measured S-parameters of Tuner. In compare the oscillator by the existing method with another one by the suggested method in this paper, the first one has 6.45 dBm output power and second one has 9.71 dBm which is 3.26 dBm higher than the first one at the oscillation frequency 1.0338 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.1
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• pp.14-19
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• 2001

When the high power transistor is used for amplifier in microwave frequency, the bias of transistor is usually AB-class or B-c1ass because of power efficiency. The sweet spot point having small IMD signal compared with near neighborhood exicts frequently in the high power transistor using AB class bias or B-class bias. On the sweet spot, the magnitude and phase of the main and IMD signal of HPA output change as the input signal power change, respective the relative phase on the sweet spot changes rapidly. If we know exactly the magnitude and phase characteristics of IMD signal, we can design a more adequate linearizer and understand the characteristics of transistor. In this paper the magnitude and phase of the main and IMD signal of HPA output on the sweet spot are measured using the designed hardware.

• Journal of the Korea Society of Computer and Information
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• v.15 no.12
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• pp.175-180
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• 2010

In this paper, we have investigated ultrahigh frequency nano-mechanical resonators, made of DWCNTs with various wall lengths, via classical molecular dynamics simulations. We have aimed our analysis on the frequency variations of these resonators with the DWCNT wall lengths. The results show that the variations can be well fitted by either the Pearson VII function when the resonant frequency of normalized by its maximum frequency is plotted as a function of the inner/outer wall length ratio L5/L10 for different values of the outer wall length L10, and the Gauss distribution function when the resonant frequency of normalized by its maximum frequency is plotted as a function of the outer/inner wall length ratio for different values of the inner wall length.