• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.19 no.6
• /
• pp.1399-1404
• /
• 2015

This paper analyzed the phenomenon of drain induced barrier lowering(DIBL) for the ratio of channel length vs. thickness of asymmetric double gate(DG) MOSFET. DIBL, the important secondary effect, is occurred for short channel MOSFET in which drain voltage influences on potential barrier height of source, and significantly affects on transistor characteristics such as threshold voltage movement. The series potential distribution is derived from Poisson's equation to analyze DIBL, and threshold voltage is defined by top gate voltage of asymmetric DGMOSFET in case the off current is 10^-7 A/m. Since asymmetric DGMOSFET has the advantage that channel length and channel thickness can significantly minimize, and short channel effects reduce, DIBL is investigated for the ratio of channel length vs. thickness in this study. As a results, DIBL is greatly influenced by the ratio of channel length vs. thickness. We also know DIBL is greatly changed for bottom gate voltage, top/bottom gate oxide thickness and channel doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.20 no.7
• /
• pp.1311-1316
• /
• 2016

This paper analyzes the influence of tunneling current on threshold voltage shift by channel length of short channel asymmetric double gate(DG) MOSFET. Tunneling current significantly increases by decrease of channel length in the region of 10 nm below, and the secondary effects such as threshold voltage shift occurs. Threshold voltage shift due to tunneling current is not negligible even in case of asymmetric DGMOSFET to develop for reduction of short channel effects. Off current consists of thermionic and tunneling current, and the ratio of tunneling current is increasing with reduction of channel length. The WKB(Wentzel-Kramers-Brillouin) approximation is used to obtain tunneling current, and potential distribution in channel is hermeneutically derived. As a result, threshold voltage shift due to tunneling current is greatly occurred for decreasing of channel length in short channel asymmetric DGMOSFET. Threshold voltage is changing according to bottom gate voltages, but threshold voltage shifts is nearly constant.

• Korean Journal of Optics and Photonics
• /
• v.27 no.4
• /
• pp.127-132
• /
• 2016

In this paper, a trench structure was fabricated by femtosecond-laser machining to eliminate thermal crosstalk in a multichannel variable optical attenuator (VOA), to prevent decreasing attenuation efficiency of the VOA. Trenches of a variety of widths and depths were fabricated on the VOA chips by femtosecond-laser processing. After the machining, attenuation according to current change was observed in each VOA chip module with trenches. As a result, we could observe high responsivity of attenuation and low power consumption, and that the heat of each channel barely influenced other channels.

• Transactions of the KSME C: Technology and Education
• /
• v.3 no.4
• /
• pp.249-255
• /
• 2015

Functional nanochannels were fabricated in order to control selective ion transportation with high permeability and low energy consumption. In this research, nanochannel platform fabrication process and surface functionalization process were developed. In addition, selective ion transportation and concentration measurement system was also set-up. By using fabricated multilayer metal membrane with electrical bias, 95% of ion ($Cl^-$) was blocked. This developed process is new-conceptional membrane fabrication technology and is expected to be applied to next-generation water purification/desalination, portable artifical kidney, and artificial sense organ.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.3
• /
• pp.317-325
• /
• 2015

In an interference environment, adaptive sidelobe blanking(adaptive SLB: ASB) algorithm effectively cancels the high-duty cycle jammer and blocks the sidelobe signals without the auxiliary antenna. The adaptive SLB for the linearly constrained minimum variance (LCMV) is proposed in this paper. In the proposed scheme, the interference covariance matrix is modified to satisfy the direction constraints of LCMV and the normalized output can be obtained to block sidelobe signals. As the LCMV can be represented as a generalized sidelobe canceller(GSC) form, which is the general framework of various adaptive beamforming(ABF) algorithms, the proposed adaptive SLB can be applied to various ABF methods. The performance of the proposed method is verified through simulation and analysis.

• Korean Chemical Engineering Research
• /
• v.44 no.5
• /
• pp.513-519
• /
• 2006

We developed two kinds of the microchip for application to electrophoresis based on both glass and quartz employing the MEMS fabrications. The poly-Si layer deposited onto the bonding interface apart from channel regions can play a role as the optical slit cutting off the stray light in order to concentrate the UV ray, from which it is possible to improve the signal-to-noise (S/N) ratio of the detection on a chip. In the glass chip, the deposited poly-Si layer had an important function of the etch mask and provided the bonding surface properly enabling the anodic bonding. The glass wafer including more impurities than quartz one results in the higher surface roughness of the channel wall, which affects subsequently on the microflow behavior of the sample solutions. In order to solve this problem, we prepared here the mixed etchant consisting HF and $NH_4F$ solutions, by which the surface roughness was reduced. Both the shape and the dimension of each channel were observed, and the electroosmotic flow velocities were measured as 0.5 mm/s for quartz and 0.36 mm/s for glass channel by implementing the microchip electrophoresis. Applying the optical slit with poly-Si layer provides that the S/N ratio of the peak is increased as ca. 2 times for quartz chip and ca. 3 times for glass chip. The maximum UV absorbance is also enhanced with ca. 1.6 and 1.7 times, respectively.

• Journal of Korea Multimedia Society
• /
• v.15 no.3
• /
• pp.364-371
• /
• 2012

Currently, CMMB(China Mobile Multimedia Broadcasting) and the conventional analog TV broadcasting have transmitted by using UHF(Ultra High Frequency : 474MHz~754MHz) band. Normally, the transmission power of the digital TV broadcasting is lower than the conventional analog TV broadcasting to protect the reception quality of the conventional analog TV broadcasting. The reception sensitivity of CMMB receiver has severely deteriorated due to adjacent the conventional analog TV broadcasting signals which called ACI (Adjacent Channel Interference). To improve the reception sensitivity of a CMMB receiver on ACI environment, this paper proposed a simple method which is tuning a cut off frequency of LPF (Low Pass Filter). From the experiment, the reception sensitivity of CMMB receiver was improved as 11.3dB.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.18 no.11
• /
• pp.1663-1668
• /
• 1993

An X-band contiguous band diplexer is realized by using asymmetrical coupled microstrip lines. The design is based on the singly terminated low pass prototype filter and optimized by using SuperCompack. The designed channel 1 and channel 2 bandwidth is 22%, and 18% respectively, where the center frequency is 9,11 GHz. The measured results of the fabricated diplexer are in good agreement with the designed ones, but the measured insertion loss is slightly highier(0.5dB) than those of the designed value.

• Review of KIISC
• /
• v.13 no.4
• /
• pp.60-67
• /
• 2003

능동형 Secure OS 시스템은 운영체제 커널에 접근 제어, 사용자 인증, 감사 추적, 암호화 파일 시스템, 신뢰 채널, 동적 구성 등의 보안 기능을 추가 구현하여 시스템에 발생 가능한 해킹을 방지하고 차단하는 시스템을 말한다. 이러한 능동형 Secure OS 시스템은 시스템 해킹을 탐지하거나 시스템 해킹을 감지하였을 때 동적으로 구성을 바꾸는 등의 조치를 취하는 시스템 기능이 필요하다. 본 고에서는 능동형 Secure OS의 주요 기능과 함께 핵심 기술의 구현 내용을 기술하며, 시스템내의 감사 추적 기능에 의해 능동적으로 시스템을 구성하고 실시간 조치가 가능하도록 한 능동형 Secure OS 시스템을 소개한다.

• Proceedings of the Optical Society of Korea Conference
• /
• 2003.07a
• /
• pp.226-227
• /
• 2003

광자 크리스탈 (Photonic Crystals)은 서로 다른 유전체의 주기적인 구조로 이루어져 있으며, 전자기파가 특정한 주파수 범위에서 전파하지 못하고 차단되는 영역인 광자 밴드갭 (Photonic Band Gap)이 존재한다. 이러한 광자 밴드갭의 존재로 인하여 빛의 흐름을 조절할 수 있다는 점 때문에 반사거울, 휘어진 도파로(bent waveguide), 레이저, 채널 드롭핑 필터(channel dropping filter) 등 여러 가지 다양한 분야에 응용될 수 있다. (중략)