• Title/Summary/Keyword: 징크황화물

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Growth mechanism of anodic oxide for MCT passivation (MCT 표면보호를 위한 양극산화막 성장)

  • 정진원;왕진석
    • Electrical & Electronic Materials
    • /
    • v.8 no.3
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    • pp.352-356
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    • 1995
  • Native oxide layer on MCT (HgCdTe) has been grown uniformly in H$\_$2/O$\_$2/ electrolyte through anodic oxidation method. It has been determined that anodic oxidation of HgCdTe in H$\_$2/O$\_$2/ electrolyte proceeds immediately with the input of constant currents without any induction time required for anodic oxideation in KOH electrolyte. Oxide layer with the resistivity of 2*10$\^$10/.ohm.cm and the refractive index of 2.1 suggested the possibility of well matching combination layer with ZnS for MCT MIS device. XPS results indicated that the major components of oxide layer grown in H202 solution is TeO$\_$2/ with the possibility of small amounts of CdTeO$\_$3/.

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