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류병환;김은영;이재도
- Journal of the Korean Ceramic Society
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- v.36 no.2
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- pp.178-185
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- 1999
For the process control of silicon nitride gelcasting, the composition effect of acryamide system on the viscosity of slip and mechanical property of gelcast green body were investigated. The slip was prepared by ball milling of silicon nitride suspension prepared with acrylamide monomer and polyelectrolyte dispersant after premixing them by attritor. The slip mixed with initiator was vacuum deaired and cast into molds, and then polymerized. The consolidated green body was obtained by drying the gelated slip. The viscosity measument and the diametral compression test was done to evaluate the rheological behaviro of slip and mechanical property of gelcast body, respectively. Experimental results showed that the high solid loading of silicon nitride slip was obtained up to 46 vol% with a low viscosity. The mechanical property of gelcast body mainly increased with increasing the concentration of monomer. The gelcast body was machinable above the ∼3 MPa of tensile strength. The relative density of pressured-sintered body was 98.5% at 1760$^{\circ}C$, 3 h.
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Lee, Byong-Taek;Yoo, Jung-Ho;Kim, Hai-Doo
- Korean Journal of Materials Research
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- v.9 no.12
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- pp.1170-1175
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- 1999
The microstructures and mechanical properties of $Si_3N_4$ ceramics produced by nitridation and post-sintering using semiconductor-waste-Si sludge were investigated. Lots of microcracks were observed in the waste-Si powders which contained some amounts of amorphous $SiO_2$. The nitridation rate of waste-Si compacts showed lower value than that of commercial Si powder compacts. The nitridation rate was increased with increasing nitridation temperature and then the percent of nitridation at 1470$^{\circ}C$ showed 98%. The phases of $Si_3N_4$ in the reaction-bonded bodies were mixed with ${\alpha}$ and ${\beta}$-type, and small amounts of $Si_2N_2O$ phase while those after post-sintering were ${\beta}$-$Si_3N_4$ and ${\alpha}$-Sialon. The sample post-sintered at 1950$^{\circ}C$ showed the fracture toughness of 5.6 $^MPa{\cdot}m^{1/2}$ and the fracture strength of 497 MPa which were lower than those of sintered body using commercial Si powder possibly due to the formation of ${\alpha}$-Sialon phase.
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Bai, Kang;Woo, Sang-Kuk;Han, In-Sub;Seo, Doo-Won
- Journal of the Korean Ceramic Society
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- v.48 no.5
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- pp.354-359
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- 2011
Silicon nitride ceramics were prepared by microwave gas phase reaction sintering. By this method higher density specimens were obtained for short time and at low temperature, compared than ones by conventional pressureless sintering, even though sintering behaviors showed same trend, the relative density of sintered body inverse-exponentially increases with sintering temperature and/or holding time. And grain size of ${\beta}$-phase of the microwave sintered body is bigger than one of the conventional pressureless sintered one. Also they showed good bending strengths and thermal shock resistances.
https://doi.org/10.4191/kcers.2011.48.5.354 인용 PDF KSCI

Song, Gun-Soo;Yoo, Kyung-Hoon
- Proceedings of the KSME Conference
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- 2007.05b
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- pp.2032-2037
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- 2007
Numerical analysis was conducted to investigate the atomic layer deposition(ALD) of silicon nitride using silane and ammonia as precursors. The present study simulated the surface reactions for as-deposited $Si_3N_4$ as well as the kinetics for the reactions of $SiH_4$ and $NH_3$on the semiconductor wafer. The present numerical results showed that the ALD process is dependent on the activation constant. It was also shown that the low activation constant leads to the self-limiting reaction required for the ALD process. The inlet and wafer temperatures were 473 K and 823 K, respectively. The system pressure is 2 Torr.
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