• Title/Summary/Keyword: 진행파 모드

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AWG device characteristic dependence on the fabrication error limit (도파폭 공정오차에 따른 광도파 특성변화와 소자성능 저하)

  • 박순룡;오범환
    • Korean Journal of Optics and Photonics
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    • v.10 no.4
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    • pp.342-347
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    • 1999
  • As the waveguide width and the radius of curvature get smaller for the effort of monolithic fabrication of integrated photonic devices, the waveguide characteristics change significantly according to the change of the waveguide width or the radius of curvature. Especially, variation of the waveguide width due to fabrication process errors induces a phase error for each waveguide from the change of the propagation constant. Therefore, it is important to quantify these variation effects on the device characteristics for the design and fabrication of highly integrated photonic devices. Here, we analyze four different types of waveguides to get general characteristics in propagation constant change by utilizing the effective index method and the analytic solution method. Futhermore, the output characteristics of two AWG(Arrayed Waveguide Grating) devices are simulated by a highly-functional computer code. The simulated results have been found to be similar to the realistic device characteristics. The required fabrication error limit for the ridge-type InP-AWG device should be smaller than 0.02 ${\mu}{\textrm}{m}$ to get better channel crosstalk than-25 dB, while the required fabrication error limit for rib-type silica-AWG devices may be allowed up to 0.1 ${\mu}{\textrm}{m}$ to obtain better crosstalk than -30 dB.

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