• Title/Summary/Keyword: 진공 장비

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핵융합로용 플라즈마 대향부품 개발을 위해 제작된 텅스텐/FM강 HIP 접합 목업의 수명 평가 해석

  • Lee, Dong-Won;Sin, Gyu-In;Kim, Seok-Gwon;Jin, Hyeong-Gon;Lee, Eo-Hwak;Yun, Jae-Seong;Mun, Se-Yeon;Hong, Bong-Geun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.452-452
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    • 2014
  • 블랑켓 일차벽이나 디버터와 같은 핵융합로 플라즈마 대향부품은 플라즈마로부터 입사되는 중성자 및 입자들을 차폐하여 구조물을 보호하고, 발생열을 에너지로 변환하기 위해 냉각재를 활용한 열제거 기능을 담당한다. 특히, 고속중성자와 입사 열부하 및 여러 입자들로부터 블랑켓 및 내부 구조물을 보호하기 위해 차폐체와 구조물로 구성된다. 세계적으로 차폐체로서는 텅스텐 혹은 텅스텐 합금, 구조물용 재료로는 저방사화 Ferritic Martensitic (FM) 강이 유력한 후보재료로 개발, 연구 중에 있다. 국내에서는 국제핵융합로(ITER) 사업을 통해 고온등방가압(HIP, Hot Isostatic Pressing)을 이용한 이종금속간 접합기술과 한국형 저방사화 고온구조재료인 ARAA (Advanced Reduced Activation Alloy)가 개발되고 있으며, 이를 활용한 설계, 접합법 개발, 제작목업의 건전성 평가 등이 수행되고 있다. 한국원자력연구원에서는 핵융합 기초사업의 일환으로 전북대와 공동으로 수행 중인 건전성 평가체계 개발을 위해, 기 개발된 접합법을 활용한 $45mm(H){\times}45mm(W){\times}2mm(T)$의 W/FM강 목업을 제작한 바 있으며, 이를 국내 구축된 고열부하 시험 장비인 KoHLT-EB (Electron Beam)를 활용한 고열부하 인가 건전성 평가시험을 준비 중에 있다. 이종금속간 접합 특성은 기계적 평가를 위한 파괴시험을 통해 검증, 이를 활용한 목업이 제작되었으며, 제작된 목업에 대한 초음파를 이용한 접합면의 비파괴 검사를 통해 결함이 없음을 확인하였다. 최종적으로 실제 사용되는 핵융합 운전조건과 유사 혹은 가혹한 조건에서 고열부하를 인가하여, 그 건전성을 평가가 이루어질 것이다. 고열부하 시험을 위해서는 냉각조건, 인가 열부하, 수명평가를 통한 반복 고열부하 인가 횟수 등이 사전에 결정되어야 한다. 이를 위해 상업용 열수력, 구조해석 코드인 ANSYS-CFX와 -mechanical을 이용한 시험조건 모의 및 수명 평가가 수행되었다. 구축 장비의 냉각계통을 고려하여 냉각수의 온도 및 속도는 $25^{\circ}C$, 0.15 kg/sec로, 열부하는 0.5 및 $1.0MW/m^2$에 대해 모의를 수행하였다. 정상상태 시 텅스텐의 최대 온도는 각 열부하 조건에 따라 $285.3^{\circ}C$$546.8^{\circ}C$였으며, 이에 도달하는 시간을 구하기 위해 천이해석을 수행하였고, 이를 통해 30초에 최대온도 95 %이상의 정상상태 온도에 도달함을 확인하였다. 또한, 목업의 초기 온도에 도달하는 냉각시간도 동일한 천이해석을 통해 30초로 가능함을 확인하였고, 최종 시험 조건을 30초 가열, 30초 냉각으로 결정하였다. 결정된 반복 열부하 인가 조건에서 이종금속 접합체가 받는 다른 열팽창 정도에 따른 응력을 계산하여 목업의 수명을 도출하였고, 이를 시험해야 할 반복 횟수로 결정하였다. 각 열부하 조건에 따른 온도조건을 ANSYS-mechanical 코드를 활용하여 열팽창과 이에 따른 접합면의 응력분포로 계산하였다. 0.5 및 $1.0MW/m^2$에 대해, 목업이 받는 최대 응력은 334.3 MPa와 588.0 MPa 였으며, 이 때 텅스텐과 FM강이 받는 strain을 도출하여 물성치로 알려진 cycle to failure 값을 도출하였다. 열부하에서 예상되는 수명은 0.5 및 $1.0MW/m^2$에 대해, 100,000 사이클 이상과 2,655 사이클로 계산되었으며, 시간적 제약을 고려 최종 평가는 $1.0MW/m^2$에 대해, 3,000사이클 정도의 실험을 통해 그 수명까지 접합건전성이 유지되는 지 실험을 통해 평가할 예정이다.

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CVD Growth of Grapbene on a Thin Ni Film (Ni 금속 박막위 그라핀 CVD 성장 연구)

  • Choi, In-Sung;Kim, Eun-Ho;Park, Jae-Min;Lee, Han-Sung;Lee, Wan-Kyu;Oh, Se-Man;Cho, Won-Ju;Jung, Jong-Wan;Lee, Nae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.425-425
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    • 2009
  • 그라핀을 금속 촉매를 이용하여 상압 혹은 저진공 CVD로 성장할 경우 대형 기판을 쉽게 얻을 수 있으므로 최근 들어 금속 촉매를 이용한 CVD 기술이 재 각광받고 있다. 최근 MIT의 Jing Kong 그룹, Purdue 대학의 Yong P. Chen 그룹, 국내에서는 성균관대학에서 이에 대한 논문을 발표한 바 있다. CVD 방법의 가장 큰 장점은 그라핀 박막의 가장 큰 문제점 중 하나인 대형 기판에 매우 유리하다는 점이다. 본 연구에서는 결함 없는 대형 그라핀기판을 얻기위해 Si/$SiO_2$/Ni 박막위에 그라핀을 LPCVD로 성장하는 실험을 진행하였다. 우선 시료는 Si위에 $SiO_2$를 Sputtering으로 증착하였고, 그 위에 250nm, 300nm두께의 Ni 박막을 e-beam evaporator로 증착하였다. $0.5-1cm^2$ 크기의 샘플을 Thermal CVD 장비를 이용하여 그라핀을 성장하는 실험을 진행하였다. 성장 압력은 95 torr, 성장온도는 $800^{\circ}C$, $850^{\circ}C$, $900^{\circ}C$에서 Hydrocarbon ($C_2H_2$)을 5min, 10min으로 성장시간을 split하였다. Hydrocarbon을 흘리기 전에 Ni grain을 성장하기 위해 성장온도에서 30~60min정도 $H_2$분위기에서 Ni 산화막의 환원 및 어닐링을 진행하였다. 그림.1은 $850^{\circ}C$, 5분간 성장한 그라핀/Ni 샘플의 광학사진이다. 그림.2는 $850^{\circ}C$에서 5min, 10min 성장한 샘플의 Raman spectrum이다. (파장은 514.532nm). 850C 10min 샘플은 G>G' peak 이지만, 5min으로 성장한 샘플의 경우 G'>G peak 임을 알 수 있고, 따라서 5min의 조건에서는 층 두께가 4층 미만의 그라핀 박막을 얻을 수 있음을 보여준다. 또한 G' peak의 위치가 두께가 감소할수록 내려감을 확인할 수 있다. 다만 D peak가 실험한 대부분의 샘플에서 보여서 아직 성장한 그라핀의 결합이 많은 것으로 보인다. 이러한 이유는 성장온도가 낮은 것이 일차 원인으로 생각되며 박막의 균일도 향상과 결함을 줄이기 위한 추가적인 개선 실험을 진행 중이다.

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Fabrication and Performance of Microcolumnar CsI:Tl onto Silicon Photomultiplier (실리콘광증배관 기반의 미세기둥 구조 CsI:Tl 제작 및 평가)

  • Park, Chan-Jong;Kim, Ki-Dam;Joo, Koan-Sik
    • Journal of IKEEE
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    • v.20 no.4
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    • pp.337-343
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    • 2016
  • This study conducted the gamma ray spectroscopic analysis of the microcolumnar CsI:Tl deposited onto the SiPMs using thermal evaporation deposition. The SEM measured thickness of microcolumnar CsI:Tl and of its individual columns. From the SEM observation, the measured thickness of CsI:Tl were $450{\mu}m$ and $600{\mu}m$. The gamma ray spectroscopic properties of microcolumnar CsI:Tl, $450{\mu}m$ and $600{\mu}m$ thick deposited onto the SiPMs were analyzed using standard gamma ray sources $^{133}Ba$ and $^{137}Cs$. The spectroscopic analysis of microcolumnar CsI:Tl deposited onto the SiPMs included the measurements of response linearity over the $^{137}Cs$ gamma ray intensity; and gamma ray energy spectrum. Furthermore from the gamma ray spectrum measurement of $^{133}Ba$ and $^{137}Cs$, $450{\mu}m$ thick CsI:Tl showed good efficiency when measured with $^{133}Ba$ and $600{\mu}m$ thick CsI:Tl was highly efficient when measured with $^{137}Cs$.

Fire-fighting Pump Approval Standard for Fire-fighting Trucks with an Additional Positive Displacement Pump (용적형 펌프를 추가한 소방자동차용 소방펌프의 성능 인정기준에 관한 연구)

  • Han, Yong-Taek;Sung, Ki-Chan;Min, Se-Hong
    • Fire Science and Engineering
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    • v.30 no.1
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    • pp.104-110
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    • 2016
  • Positive displacement pumps with high pressure and water capacity are used large fires in various high-rise buildings. This study provides information for a performance approval standard of fire pumps for fire trucks based on centrifugal pump standards enacted in 2012. An experiment was conducted with a positive displacement pump for three levels of performance from the approval standard (V-1, 2, and 3). The efficiency of the pump was included in the reference, which requires the approval of 65% performance, the same as a centrifugal pump. The water pressure is between 1.5 and 2.5 MPa, and the required flow rate was established as at least $0.31m^3/min$ and up to $3.0m^3/min$. A relief valve was added to adjust the shut-off pressure due to the structural characteristics of the positive displacement pump. A strainer was also installed to prevent damage to the inside of the pump due to foreign matter. However, the strainer includes a difference from the positive displacement pump to operate without a vacuum pump and the centrifugal pump. This is due to the additional approval standard portion of the positive displacement pump, which is expected to be selected for more variety of fire-fighting equipment and proactive responses to fire suppression in a high-rise buildings and large fires. In conclusion, this approval standard was enacted in January 2016.

Performance Characteristics of p-i-n Type Organic Thin-film Photovoltaic Cell with CuPc: $F_4$-TCNQ Hole Transport Layer (CuPc: $F_4$-TCNQ 정공 수송층이 도입된 P-i-n형 유기 박막 태양전지의 성능 특성 연구)

  • Park, So-Hyun;Kang, Hak-Su;Senthilkumar, Natarajan;Park, Dae-Won;Choe, Young-Son
    • Polymer(Korea)
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    • v.33 no.3
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    • pp.191-197
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    • 2009
  • We have investigated the effect of strong p-type organic semiconductor $F_4$-TCNQ-doped CuPc hole transport layer on the performance of p-i-n type bulk heterojunction photovoltaic device with ITO/PEDOT:PSS/CuPc: $F_4$-TCNQ(5 wt%)/CuPc:C60(blending ratio l:l)/C60/BCP/LiF/Al, architecture fabricated via vacuum deposition process, and have evaluated the J-V characteristics, short-circuit current ($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and power conversion efficiency(${\eta}_e$) of the device. By doping $F_4$-TCNQ into CuPc hole transport layer, increased absorption intensity in absorption spectra, uniform dispersion of organic molecules in the layer, surface uniformity of the layer, and enhanced injection currents improved the current photovoltaic device with power conversion efficiency(${\eta}_e$) of 0.16%, which is still low value compared to silicone solar cell indicating that many efforts should be made to improve organic photovoltaic devices.

The Characteristic Improvement of Photodiode by Schottky Contact (정류성 접합에 의한 광다이오드의 특성 개선)

  • Hur Chang-wu
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.7
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    • pp.1448-1452
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    • 2004
  • In this paper, a photodiode capable of obtaining a sufficient photo/ dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an Cr thin film formed as a lower electrode over the glass substrate, Cr silicide thin film(∼l00$\AA$) ) formed as a schottky barrier over the Cr thin film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the Cr silicide thin film. Transparent conduction film ITO (thickness 100nm) formed as an upper electrode over the hydro-generated amorphous silicon film is then deposited in pure argon at room temperature for the Schottky contact and light window. The high quality Cr silicide thin film using annealing of Cr and a-Si:H is formed and analyzed by experiment. We have obtained the film with a superior characteristics. The dark current of the ITO/a-Si:H Schottky at a reverse bias of -5V is ∼3$\times$IO-12 A/un2, and one of the lowest reported, hitherto. AES(Auger Electron Spectroscophy) measurements indicate that this notable improvement in device characteristics stems from reduced diffusion of oxygen, rather than indium, from the ITO into the a-Si:H layer, thus, preserving the integrity of the Schottky interface. The spectral response of the photodiode for wavelengths in the range from 400nm to 800nm shows the expected behavior whereby the photocurrent is governed by the absorption characteristics of a-Si:H.

Magnetoresistive Properties of Array IrMn Spin Valves Devices (어레이 IrMn 스핀밸브 소자의 자기저항특성 연구)

  • Ahn, M.C.;Choi, S.D.;Joo, H.W.;Kim, G.W.;Hwang, D.G.;Rhee, J.R.;Lee, S.S.
    • Journal of the Korean Magnetics Society
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    • v.17 no.4
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    • pp.156-161
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    • 2007
  • To develop array magnetic sensors, specular-type giant magnetoresistive- spin valve (GMR-SV) film of Glass/Ta(5)MiFe(7)/IrMn(10)NiFe(5)/$O_2$/CoFe(5)/Cu(2.6)/CoFe(5)/$O_2$/NiFe(7)/Ta(5)(nm) was deposited by using a high-vacuum sputtering system. One of 15 way sensors in the area of $8{\times}8mm^2$ was Patterned a size of $20{\times}80{\mu}m^2$ in multilayer sample by Photo-lithography. All of 15 sensors with Cu electrodes were measured a uniform magnetic properties by 2-probe method. The highest magnetic sensitivity of MR and output voltage measured nearby an external magnetic field of 5 Oe were MS = 0.5%/Oe and ${\triangle}$V= 3.0 mV, respectively. An easy-axis of top-free layers of $CoFe/O_2/NiFe$ with shape anisotropy was perpendicular to one of bottom-pinned layers $IrMn/NiFe/O_2/CoFe$. When the sensing current increased from 1 mA to 10 mA, the output working voltage uniformly increased and the magnetic sensitivity was almost stable to use the nano-magnetic devices with good sensitive properties.

High Frequency Magnetic Characteristics of $Co_{90}Fe_{10}$ Thin Films and $Co_{90}Fe_{10}/SiO_2$ Multilayers ($Co_{90}Fe_{10}$ 박막 및 $Co_{90}Fe_{10}/SiO_2$ 다층박막의 고주파 자기특성)

  • 윤의중;진현준;박노경;문대철;김좌연
    • Journal of the Korean Magnetics Society
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    • v.8 no.5
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    • pp.300-307
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    • 1998
  • The $Co_{90}Fe_{10}$ single layer films were deposited on various substrates (glass, Si, polymide) using high vacuum RF magnetron sputtering system and nominall 1000 $\AA$ thick $Co_{90}Fe_{10}$ alloy films had a good high frequency characteristic. $M_S$ and $H_{an}$ values obtained from the B-H characteristic of the $10{\times}[100 nm \;Co_{90}Fe_{10}/100 nm\; SiO_2]$ multilayers agreed well with those obtained by calculation. Complex relative permeability $(={\{\mu}_r={\mu}_r',-j{\mu}$\mu$_r")$ at frequency f was measured from the transmission characteristics $(S_{11},\; S_{21}\;parameters)$ of the microstrip line which has a stacked structure consisting of sample magnetic films and a conductor and is connected to a network analyzer. The ${\mu}_r'-f$ characteristic was abtained from the megnetic absorption, which was analyzed from the S-parameter characteristics of the microstrip line. The ${\mu}_r'-f$ characteristic was also calculated from the ${\mu}_r"-f$-f characteristic using the Kramers-Kronig relation. The measurement results were confirmed to agree well with those obtained by calculations.culations.

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A Study on Real-Time Monitoring for Moisture Measurement of Organic Samples inside a Drying Oven using Arduino Based on Open-Source (오픈 소스 기반의 아두이노를 이용한 건조기 내 유기 시료의 실시간 수분측정 모니터링에 관한 연구)

  • Kim, Jeong-hun
    • Journal of Venture Innovation
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    • v.5 no.2
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    • pp.85-99
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    • 2022
  • Dryers becoming commercially available for experimental and industrial use are classified to general drying oven, hot-air dryer, vacuum dryer, freezing dryer, etc. and kinds of them are various from the function, size and volume, etc. But the moisture measurement is not applied although it is important factor for the quality control and the performance improvement of products, and then now is very passive because the weight is weighed arbitrarily after dry-end. Generally the method for measuring moisture is divided by a direct measurement method and a indirect measurement method, and the former such as the change of weight or volume on the front and rear of separation of moisture, etc. is mainly used. Relatively a indirect measurement is very limited to apply due to utilize measurement apparatuses using temperature conductivity and micro-wave etc. In this research, we easily designed the moisture measurement system using the open-source based Arduino, and monitored moisture fluctuations and weight profiles in the real-time without the effect of external environment. Concretely the temperature-humidity and load cell sensors were packaged into a drying oven and the various change values were measured, and their sensors capable to operate 60℃ and 80℃ were selected to suitable for the moisture sensitive materials and the food dry. And also the performance safety using the organic samples of banana, pear, sawdust could be secured because the changes of evaporation rate as the dry time and temperature, and the measurement values of load cell appeared stable response characteristics through repeated experiments. Hereafter we judge that the reliability can be improved increasingly through the expansion of temperature-humidity range and the comparative analysis with CFD(Computational Fluid Dynamics) program.

Research of Heavily Selective Emitter Doping for Making Solar Cell by Using the New Atmospheric Plasma Jet (새로운 대기압 플라즈마 제트를 이용한 태양전지용 고농도 선택적 도핑에 관한 연구)

  • Cho, I Hyun;Yun, Myung Soo;Son, Chan Hee;Jo, Tae Hoon;Kim, Dong Hea;Seo, Il Won;Rho, Jun Hyoung;Jeon, Bu Il;Kim, In Tae;Choi, Eun Ha;Cho, Guangsup;Kwon, Gi Chung
    • Journal of the Korean Vacuum Society
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    • v.22 no.5
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    • pp.238-244
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    • 2013
  • Doping process using laser is an important process in fabrication of solar cell for heat treatment. However, the process of using the furnace is difficult to form a selective emitter doping region. The case of using a selective emitter laser doping is required an expensive laser equipment and induce the wafer's structure damage due to high temperature. This study, we fabricated a new costly plasma source. Through this, we research the selective emitter doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (a few tens kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer. Atmospheric plasma treatment time was 15 s and 30 s, and current for making the plasma is 40 mA and 70 mA. We investigated a doping profile by using SIMS (Secondary Ion Mass Spectroscopy) and we grasp the sheet resistance of electrical character by using doping profile. As result of experiment, prolonged doping process time and highly plasma current occur a deeper doping depth, moreover improve sheet resistance. We grasped the wafer's surface damage after atmospheric pressure plasma doping by using SEM (Scanning Electron Microscopy). We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.