• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.22 no.2
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• pp.64-69
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• 2010

We investigated the variation in contact angle of a nano-sized water droplet on a nano stripe-patterned surface using molecular dynamics simulation. By changing the height and width of the stripe pillar, and the gap width of the stripes, we observed the contact angle of water droplet in equilibrium. When the surface energies were 0.1 and 0.3 kcal/mol, the calculated contact angles were in good agreement with the Cassie and Baxter equation. However, when the surface energy is 0.5 kcal/mol, the contact angles are observed to be perturbed along the Cassie and Baxter equation.

• Journal of the Korea Society of Computer and Information
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• v.6 no.4
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• pp.104-109
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• 2001

In this paper, we designed a 3D shape measuring system with high speed and high measurement resolution using line-shaped sine stripes of a LCD projector We proposed an effective method to improve measurement efficiency for a 3D shape measuring system by finding the deficient shape information areas and recovering the shape information efficiently. We experimentally confirmed the improvement of measurement efficiency. Deficient shape information areas can be inevitably existed in a acquired image caused by the camera view angle and surface shapes of an object. The measurement efficiency is turned out to be improved by extracting these shadow areas and recovering the shape information efficiently using both a variable rated normalization and a variable sized phase recovering windows.

• Applied Microscopy
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• v.25 no.3
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• pp.75-81
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• 1995

The microstructural characterization of ternary $ZnS_{x}Se_{1-x}$(x=0.085) on GaAs(001) substrate grown up to $2{\mu}m\;at\;300^{\circ}C$ by molecular beam epitaxy(MBE) which has a single growth chamber was investigated by high resolution transmission electron microscope (HRTEM) working at 300 kV with point resolution of 0.18nm. The interface in the ZnSSe/GaAs specimen maintains a pseudomorphism with the substrate, but the epilayer has high density of stacking faults and moire fringes. The pits which had formed along <111> direction were found at the interface of ZnSSe/GaAs. The pits were responsible for producing defects in both epilayer and substrate. The wavy interface which has the difference of 15nm in height was found to maintain the pseudomorphism with the substrate and no stacking faults were found around the interface. However there exists faint and fine moire fringes in the epilayer near interface.