• Smart Media Journal
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• v.9 no.2
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• pp.16-21
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• 2020

Recently, mobile traffic is increasing exponentially as major traffic is transferred to IoT and visual media data in the dissemination of mobile communication terminals and contents use. In order to overcome the limitations of the existing LTE system, 5G mobile communication technology (5G) is a technology that meets 1000 times data traffic capacity, 4G LTE system acceptance, low latency, high energy efficiency, and high cost compared to 4G LTE system. The path loss due to the use of the frequency domain is very high, so it may be difficult to provide a service compared to the existing 4G LTE system. To overcome these shortcomings, various techniques are under study. In this paper, small cell technology is introduced to improve the system performance of 5G mobile communication systems. The performance is analyzed by comparing the results of small cell technology application, macro communication and small cell communication, and the results of the proposed algorithm application for power control. The analysis results show that the use of small cell technology in the 5th generation mobile communication system can significantly reduce the shadow area and reduce the millimeter wave path loss problem.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.11C
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• pp.1077-1087
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• 2003

In this paper, we proposed an architecture of a cryptosystem with various operating modes for the network security and implemented in hardware using the ASIC library. For configuring a cryptosystem, the standard block ciphers such as AES, SEED and 3DES were included. And the implemented cryptosystem can encrypt and decrypt the data in real time through the wired/wireless network with the minimum latency time (minimum 64 clocks, maximum 256 clocks). It can support CTR mode which is widely used recently as well as the conventional block cipher modes such as ECB, CBC and OFB, and operates in the multi-bit mode (64, 128, 192, and 256 bits). The implemented hardware has the expansion possibility for the other algorithms according to the network security protocol such as IPsec and the included ciphering blocks can be operated simultaneously. The self-ciphering mode and various ciphering mode can be supported by the hardware sharing and the programmable data-path. The global operation is programmed by the serial communication port and the operation is decided by the control signals decoded from the instruction by the host. The designed hardware using VHDL was synthesized with Hynix 0.25$\mu\textrm{m}$ CMOS technology and it used the about 100,000 gates. Also we could assure the stable operation in the timing simulation over 100㎒ using NC-verilog.

• Journal of Digital Contents Society
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• v.17 no.2
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• pp.71-79
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• 2016

This study is intended to compare the performances of sound source localization methods used for stable automobile control by improving voice recognition rate in automobile environment and suggest how to improve their performances. Generally, sound source location estimation methods employ the TDOA algorithm, and there are two ways for it; one is to use a cross correlation function in the time domain, and the other is GCC-PHAT calculated in the frequency domain. Among these ways, GCC-PHAT is known to have stronger characteristics against echo and noise than the cross correlation function. This study compared the performances of the two methods above in automobile environment full of echo and vibration noise and suggested the use of a median filter additionally. We found that median filter helps both estimation methods have good performances and variance values to be decreased. According to the experimental results, there is almost no difference in the two methods' performances in the experiment using voice; however, using the signal of a song, GCC-PHAT is 10% more excellent than the cross correlation function in terms of the recognition rate. Also, when the median filter was added, the cross correlation function's recognition rate could be improved up to 11%. And in regarding to variance values, both methods showed stable performances.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.6
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• pp.613-624
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• 2011

An MMIC multi-function chip for an X-band active phased array radar system has been designed and fabricated using a 0.5 ${\mu}m$ GaAs p-HEMT commercial process. A digital serial-to-parallel converter is included in this chip in order to reduce the number of the control interface. The multi-function chip provides several functions: 6-bit phase shifting, 6-bit attenuation, transmit/receive switching, and signal amplification. The fabricated multi-function chip with a relative compact size of 24 $mm^2$(6 mm${\times}$4 mm) exhibits a transmit/receive gain of 24/15 dB and a P1dB of 21 dBm from 8.5 GHz to 10.5 GHz. The RMS errors for the 64 states of the 6-bit phase shift and attenuation were measured to $7^{\circ}$ and 0.3 dB, respectively over the frequency.

• Journal of the Korean Magnetics Society
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• v.23 no.2
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• pp.49-53
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• 2013

A current sensor is one of important component which is used for the electrical current measurement during charge and discharge of the battery, and monitoring system of the motor controller in the electric and hybrid vehicle. In this study, we have developed an open loop type current sensor using GaAs Hall sensor and magnetic core has an air gap. The Hall sensor detect magnetic field produced by the current to be measured. The 3 mm air gap core was made by HGO electrical steel sheets after slitting, winding, annealing, molding, and cutting. Developed current sensor shows 0.03 % linearity within DC current range from -400 A to +400 A. Operating temperature range was extended to the range of $-40{\sim}105^{\circ}C$ using temperature compensating electronic circuit. To Improve frequency bandwidth limit due to the air flux of PCB (Printed Circuit Board) and Hall sensor, We employed an air flux compensating loop near Hall sensor or on PCB. Frequency bandwidth of the sensor was 100 kHz when we applied sine wave current of $40A{\cdot}turn$ in the frequency range from 100 Hz to 100 kHz. For the dynamic response time measurement, 5 kHz square wave current of $40A{\cdot}turn$ was applied to the sensor. Response time was calculated time reach to 90 % of saturation value and smaller than $2{\mu}s$.

• Journal of the Korean Society for Railway
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• v.19 no.1
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• pp.38-45
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• 2016

The power transformation system of High Speed rolling stocks like KTX-Sancheon has shown excellent control capacities in the areas of riding comfortability, switching efficiency, safety and energy consumption due to technical developments in power-electronics, high speed & large scale integrated semiconductors and microprocessors. However, harmonics from IGBT, a high speed switching device used in the Convertor & Invertor equipment of rolling stocks have given rise to various problems in transformer substations, signaling systems, data transmission systems and facility monitoring systems. Especially, TI21 non-insulated track circuits have malfunctioned due to the influence of returning current harmonics which were generated at around of integer times of the number of power transformation equipment in the frequency domain. This paper, measures and analyzes various schemes to analyze the traveling path of the returning current harmonics generated due to the relationship between the rolling stocks and track circuits on site. Ultimately, theseschemes will be used to design high speed rolling stocks, AF track circuits and a common grounding network.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.140-140
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• 2016

유기전계발광소자 (Organic Light Emitting Diode : OLED)는 보조광원이 필요 없고 천연색 표현이 가능하며, 낮은 소비 전력 및 저전압 구동 등의 장점으로 이상적인 디스플레이 구현이 가능하여 차세대 디스플레이로써 많은 이목을 끌고 있으나 제한된 수명과 안정성의 문제점을 안고 있다. 따라서 OLED의 열화 원인을 분석하고 수명을 연장하기 위한 체계적인 방법과 기술 개발이 중요하다. Impedance Spectroscopy는 이온, 반도체, 절연체 등의 벌크 또는 계면 영역의 전하 이동을 조사하는데 사용될 수 있어, OLED에서도 Impedance Spectroscopy를 이용하여 전하수송과 전자주입 메커니즘 등 폭넓은 전기적 정보를 얻을 수 있다. 본 연구에서는 Impedance Spectroscopy를 이용하여 경과시간에 따른 OLED의 임피던스 특성을 측정하여 열화 메커니즘을 분석하였다. 본 연구에서 OLED는 ITO / 2-TNATA (4,4,4-tris2-naphthylphenyl-aminotriphenylamine) / NPB (N,N'-bis-(1-naphyl)-N, N'-diphenyl-1,1'- biphenyl-4,4'-diamine) / Alq3 (tris(quinolin-8-olato) aluminum) / Liq / Al으로 구성된 녹색 형광 OLED를 제작하였다. OLED의 전계 발광 특성을 측정하기 위한 전원 인가장치로 Keithley 2400을 사용하여 전압과 전류를 인가하였고, 소자에서 발광된 휘도 및 발광 스펙트럼은 Photo Research사의 PR-650 Spectrascan을 사용하여 암실 환경에서 측정하였다. 임피던스 스펙트럼은 컴퓨터 제어 프로그래밍이 가능한 KEYSIGHT사의 E4990A를 사용하여 측정하였다. 임피던스 측정 전압은 0 V부터 2 V 간격으로 8 V까지, 주파수는 20 Hz에서 2 kHz의 범위로 설정하여 측정하였다. I-V-L과 임피던스 특성은 24 시간의 간격을 두고 실온에서 측정하였다. 그림은 경과시간에 따른 녹색 형광 OLED의 인가전압 2 V, 6 V의 Cole-Cole plot을 나타낸 것이다. 문턱전압 미만인 인가전압 2 V에서는 소자를 통하여 전류가 흐르지 않아 큰 반원 형태를 나타내었고, 시간이 경과함에 따라 소자 제작 직후엔 실수 임피던스의 최댓값이 $8982.6{\Omega}$에서 480 시간 경과 후엔 $9840{\Omega}$으로 약간 증가하였다. 문턱전압 이상인 인가전압 6 V에서는 소자 제작 직후 실수 임피던스의 최댓값이 $108.2{\Omega}$으로 작은 반원 형태를 나타내나 시간이 경과함에 따라 방사형으로 증가하는 것을 확인 할 수 있었고, 672 시간 경과 후엔 실수 임피던스의 최댓값이 $9126.9{\Omega}$으로 문턱 전압 미만 일 때와 유사한 결과를 나타내었다. 이러한 임피던스의 증가 현상은 시간이 경과함에 따라 OLED의 열화에 의한 것으로 판단된다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.177-177
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• 2016

우수한 내식성을 가지는 Zn 박막은 자동차, 가전제품, 전자제품 등에 사용되는 철 생산품의 수명 연장을 위하여 널리 사용되어 왔다. 최근 개발된 Zn-Mg 합금 박막은 Zn나 Mg에 비해 우수한 내식성을 나타내는 Zn-Mg 합금상을 형성하기 때문에 순수한 Zn 박막이나 다른 Zn 계 합금 박막에 비해 우수한 내식성을 가진다고 보고된 바 있다. 본 연구에서는 다양한 합금상의 형성을 위해 Mg 중간층 두께를 제어하며 Zn/Mg/Zn 다층 박막들을 합성하였으며 열처리를 통한 합금상의 변화, 그에 따른 박막의 내식성에 관해 연구하였다. Zn/Mg/Zn 다층 박막은 총 $4{\mu}m$의 두께로 Mg 중간층의 두께를 변화하였으며 비대칭 마그네트론 스퍼터링 공정을 이용하여 냉연강판 위에 합성하였다. 합성된 다층 박막은 다양한 Zn-Mg 합금상을 형성하기 위하여 진공로를 이용하여 $200^{\circ}C$에서 1시간 동안 어닐링 열처리를 실시하였다. 열처리 전, 후 Zn/Mg/Zn 다층 박막의 미세조직과 조성은 X선 회절 분석기 (XRD)와 전계방출형 주사전자현미경 (FE-SEM)과 글로우 방전 분광분석기 (GDEOES)를 사용하여 분석하였다. 어닐링 열처리를 통한 Zn-Mg 합금상 형성이 Zn/Mg/Zn 다층 박막의 내식성에 미치는 영향을 평가하기 위하여 동전위 분극시험과 EIS(Electrochemical impedance spectroscopy) 분석 실시하였다. FE-SEM과 GDOES 분석 결과, Zn/Mg/Zn 다층 박막들 각각의 중간층 Mg 두께는 1.5, 2.0, $2.5{\mu}m$ 였으며, 어닐링 열처리 후 중간층의 Mg이 상, 하부의 Zn 층으로 확산되면서 박막을 치밀한 구조로 변화시키는 것으로 확인되었다. XRD 분석 결과, 열처리를 하지 않은 Zn/Mg/Zn 다층 박막들에서는 Mg 상의 피크의 강도 차이만 존재할 뿐 Zn-Mg 합금상은 형성되지 않았다. 그러나 열처리를 후 Zn/Mg/Zn 다층 박막들에서 $MgZn_2$ 합금상이 형성되었으며, 중간층 Mg 두께가 $1.5{\mu}m$ 이하인 박막에서는 Zn 상이, 초과하는 박막에서는 Mg 상이 잔존하는 것을 확인하였다. EIS 분석 결과, 열처리 후 박막의 전하이동저항 값은 증가하며 박막의 어드미턴스 값이 감소하였으며 Bode phase plot을 통해 열처리 후 시정수(time constant)가 높은 주파수 영역에서 형성 되는 것을 확인하였다. 이는 열처리 후 Zn/Mg/Zn 다층 박막이 치밀해지고 내식성이 향상되었음을 나타낸다. 동전위 분극시험 결과에서도 마찬가지로 열처리 한 Zn/Mg/Zn 다층 박막들은 열처리 전 대비 내식성이 향상되는 것을 확인하였다. 열처리를 통한 Zn/Mg/Zn 다층 박막의 내식성의 향상은 우수한 내식성의 합금상의 형성과 박막 미세구조의 치밀화에 기인한다고 판단하였다. 또한 열처리 한 Zn/Mg/Zn 다층 박막들에서는 Zn와 $MgZn_2$ 상들이 공존 할 경우 가장 우수한 내식성을 나타내었으며, 이는 $MgZn_2$와 Zn 사이의 적은 전위 차이로 인해 갈바닉 부식 효과가 감소되었기 때문으로 판단된다.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.1
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• pp.59-67
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• 2016

A novel instrumentation amplifier (IA) using fully-differential linear operational transconductance amplifier (FLOTA) for electronic measurement systems with low cost, wideband, and gain control with wide range is designed. The IA consists of a FLOTA, two resistor, and an operational amplifier(op-amp). The principal of the operating is that the difference of two input voltages applied into FLOTA converts into two same difference currents, and then these current drive resistor of (+) terminal and feedback resistor of op-amp to obtain output voltage. To verify operating principal of the IA, we designed the FLOTA and realized the IA used commercial op-amp LF356. Simulation results show that the FLOTA has linearity error of 0.1% and offset current of 2.1uA at input dynamic range ${\pm}3.0V$. The IA had wide gain range from -20dB to 60dB by variation of only one resistor and -3dB frequency for the 60dB was 10MHz. The proposed IA also has merits without matching of external resistor and controllable offset voltage using the other resistor. The power dissipation of the IA is 105mW at supply voltage of ${\pm}5V$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.10
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• pp.1096-1103
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• 2008

This paper proposes an individual order predistortion linearizer using intermodulation distortion(IMD) generator for cancellation the third and the fifth IMD of power amplifier. The IMD generator for controlling the third and the fifth IMD consist of common Emitter amplifier and Schottky diode. These signals are generated by series feedback of Schottky diode to obtain the inverse AM/AM and AM/PM characteristics of power amplifier. The individual order predistorters are consisted of individual IMD generator, power splitter and combiner. The test results show that the third and the fifth IMD can be improved by a maximum 13.5 dB and 0.9 dB in case of CW 2-tone signals. Also, the Adjacent Channel Leakage Ratio(ACLR) can be improved 2.3 dB, 2.5 dB at ${\pm}0.885$ MHz, ${\pm}1.23$ MHz offset frequency for CD-MA IS-95 2FA signals.