• Title/Summary/Keyword: 접합계면 평가

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Ultrasonic Nondestructive Evaluation Technique of Dissimilar Metal Transition Joints (이종재료 접합면의 초음파 비파괴평가기법)

  • Park, Ik-Gun;Park, Eun-Su
    • Journal of the Korean Society for Nondestructive Testing
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    • v.14 no.3
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    • pp.194-205
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    • 1994
  • 이종재료 접합재의 연구개발(R&D)이나 품질보증(QA)분야에서 최적 접합조건의 신속한 결정과 사용중 접합재의 접합강도에 결정적으로 영향을 미치는 접합계면의 박리 미접합부등의 비파괴진단 평가기법에 적극 활용되고 있는 초음파비파괴평가(UNDE)기법의 주된 특징과 적용한계, 향후 연구되어야할 과제등을 최근의 특징적인 연구경향과 적용예를 중심으로 소개하고자 한다. 본고(本稿)에서 기술하는 초음파비파괴평가기법은 부분적으로는 기술의 안정화단계에 까지 상당히 접근하여, 현재 국내 반도체산업의 품질보증분야에서는 접합재료 접합계면의 비파괴적해석에 그 유용성이 어느정도 확인되고 있으나 정량적비파괴평가(QNDE)와 검사시스템의 꽃이라 불리는 전문가시스템화에의 접근에는 아직 해결되어야할 문제가 많다. 따라서, 저자들은 앞으로 접합재료 접합계면의 비파괴적해석에 관련한 연구사례와 결과를 정량적비파괴평가의 중요성과 방향성에 초점을 두고 본학회지를 통하여 계속 연재할 계획이다.

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Nondestructive Evaluation of Nanostructured Thin Film System Using Scanning Acoustic Microscopy (초음파현미경을 이용한 나노 구조 박막 시스템의 비파괴평가)

  • Miyasaka, Chiaki;Park, Ik-Keun;Park, Tae-Sung
    • Journal of the Korean Society for Nondestructive Testing
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    • v.30 no.5
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    • pp.437-443
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    • 2010
  • In recent years, as nano scale structured thin film technology has emerged in various fields such as the materials, biomedical and acoustic sciences, the quantitative nondestructive adhesion evaluation of thin film interfaces using ultra high frequency scanning acoustic microscopy(SAM) has become an important issue in terms of the longevity and durability of thin film devices. In this study, an effective technique for investigating the interfaces of nano scale structured thin film systems is described, based on the focusing of ultrasonic waves, the generation of leaky surface acoustic waves(LSAWs), V(z) curve simulation and ultra high frequency acoustical imaging_ Computer simulations of the V(z) curve were performed to estimate the sensitivity of detection of micro flaws(i.e., delamination) in a thin film system. Finally, experiments were conducted to confirm that a SAM system operating at a frequency of 1 GHz can be useful to visualize the micro flaws in nano structured thin film systems.

MEMS용 MLCA와 Si기판의 양극접합 특성

  • 정귀상;김재민
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2003.12a
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    • pp.105-108
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    • 2003
  • 본 논문은 파이렉스 #7740 유리박막을 이용한 MEMS용 MLCA와 Si기판의 양극접합 특성에 관한 것이다. 최적의 RF 마그네트론 스퍼터링 조건(Ar 100 %, input power $1W/\textrm{cm}^2$)하에서 MLCA 기판위에 파이렉스 #7740 유리의 특성을 갖는 박막을 증착한 후 600 V, $400^{\circ}C$에서 1시간동안 양극접합했다. 그 다음에 Si 다이어프램을 제조한 후, MLCA/Si 접합계면과 MLCA 구동을 통한 Si 다이어프램 변위특성을 분석 및 평가하였다. 다이어프램 형상에 따라 정밀한 변위 제어가 가능했으며 0.05-0.08 %FS의 우수한 선형성을 나타내었다. 또한, 측정동안 접합계면 균열이나 계면분리가 일어나지 않았다. 따라서, MLCA/Si기판 양극접합기술은 고성능 압전 MEMS 소자 제작공정에 유용하게 사용가능할 것이다.

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Capacitance-voltage characteristics of ZnO/GaN heterostructures (ZnO/GaN 이종접합구조의 capacitance-voltage 특성에 관한 연구)

  • Oh, Dong-Cheol;Han, Chang-Suk;Koo, Kyung-Wan;Jung, Soon-Won
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.148-149
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    • 2006
  • Capacitance-voltage(C-V) 측정평가를 통하여 ZnO/GaN 이종접합구조의 전기적인 특성을 조사한다. 실온에서 10kHz의 주파수에서 얻은 ZnO/GaN의 이종접합구조에 대한 C-V 측정결과는 이종접합계면에서 고밀도의 전자가 축적되어 있음을 나타낸다. 이것은 ZnO/GaN 이종접합계면의 다른 재료에서 볼 수 없는 큰 전도대불연속에 기인한 것인데, 각각의 층의 전도도을 제어함으로 이종접합계면에 축적되는 전자밀도를 ${\sim}10^{19}cm^{-3}$까지 증가시킬 수 있다. 따라서 ZnO/GaN 이종접합구조는 이종접합(合)트래지스터로서 유망한 재료로 판단된다.

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Development of Ultrasonic Testing Method for Evaluation of Adhesive Layer of Blaster Tube (토출관 접합계면 평가를 위한 초음파 시험법 개발)

  • Kim, Y.H.;Song, S.J.;Park, J.S.;Cho, H.;Lim, S.Y.;Yun, N.G.;Park, Y.J.
    • Journal of the Korean Society of Propulsion Engineers
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    • v.8 no.2
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    • pp.46-53
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    • 2004
  • Ultrasonic testing method has been developed to evaluate flaw of adhesive layers in blast tube for the reliability of the rocket nozzle. The ultrasonic reflection from the interface between the steel sheet and the epoxy adhesive is measured with a high-frequency Pulse-echo setup in order to identify contact debonding and missing adhesive in epoxy layer between steel and FRP layers. The steel sheet is resonated by low-frequency ultrasound, and the gap size underneath the measuring location is estimated from the resonance responses. For practical application in industry an automated testing system has been developed where the proposed approach is implemented. The performance of the proposed approach has been verified by actual measurement of gap sizes from the cross-sections of cut specimens using an optical microscope.

Development of ultrasonic testing method for the evaluation of adhesive layer of blast tube (토출관 접합계면 평가를 위한 초음파 시험법 개발)

  • Kim, Y.H.;Song, S.J.;Park, J.S.;Cho, H.;Lim, S.Y.;Yun, N.G.;Park, Y.J.
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2003.10a
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    • pp.230-237
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    • 2003
  • Ultrasonic testing method has been developed to evaluate adhesive layers in blast tube for the reliability of the rocket. The main objective of the present work was to find debonding and missing adhesive in epoxy layer between steel and FRP layers. In this approach, the ultrasonic reflection from the interface between the steel sheet and the epoxy adhesive is measured with a high-frequency pulse-echo setup in order to identify contact debonding and missing adhesive. Then, the steel sheet is excited to resonance by low-frequency ultrasound, and the gap size underneath the measuring location is estimated from the resonance responses. For practical application in industry an automated testing system has been developed where the proposed approach is implemented. The performance of the proposed approach has been verified by actual measurement of gap sizes from the cross-sections of cut specimens using an optical microscope.

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Interfacial shear strength test by a hemi-spherical microbond specimen of carbon fiber and epoxy resin (탄소섬유/에폭시의 반구형 미소접합 시험편에 대한 계면강도 평가)

  • Park, Joo-Eon;Gu, Ja-Uk;Kang, Soo-Keun;Choi, Nak-Sam
    • Composites Research
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    • v.21 no.4
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    • pp.15-21
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    • 2008
  • Interfacial shear strength between epoxy and carbon fiber was analyzed utilizing a hemi-spherical microbond specimens adhered onto single carbon fiber. The hemi-spherical microbond specimen showed high regression coefficient and small standard deviation in the measurement of interfacial strength as compared with a droplet and an inverse hemi-spherical one. This seemed to be caused by the reduced meniscus effects and the reduced stress concentration In the region contacting with a pin-hole loading device. Finite element analysis showed that the stress distributions along the fiber/matrix interface in the hemi-spherical specimen had a stable shear stress distribution along the interface without any stress mode change. The experimental data was also different according to the kinds of loading device such as the microvise-tip and the pin-holed plate.

Characterization of Interfacial Adhesion of Cu-Cu Bonding Fabricated by Thermo-Compression Bonding Process (열가압 접합 공정으로 제조된 Cu-Cu 접합의 계면 접합 특성 평가)

  • Kim, Kwang-Seop;Lee, Hee-Jung;Kim, Hee-Yeoun;Kim, Jae-Hyun;Hyun, Seung-Min;Lee, Hak-Joo
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.34 no.7
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    • pp.929-933
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    • 2010
  • Four-point bending tests were performed to investigate the interfacial adhesion of Cu-Cu bonding fabricated by thermo-compression process for three dimensional packaging. A pair of Cu-coated Si wafers was bonded under a pressure of 15 kN at $350^{\circ}C$ for 1 h, followed by post annealing at $350^{\circ}C$ for 1 h. The bonded wafers were diced into $30\;mm\;{\times}\;3\;mm$ pieces for the test. Each specimen had a $400-{\mu}m$-deep notch along the center. An optical inspection module was installed in the testing apparatus to observe crack initiation at the notch and crack propagation over the weak interface. The tests were performed under a fixed loading speed, and the corresponding load was measured. The measured interfacial adhesion energy of the Cu-to-Cu bonding was $9.75\;J/m^2$, and the delaminated interfaces were analyzed after the test. The surface analysis shows that the delamination occurred in the interface between $SiO_2$ and Ti.

Cu Thickness Effects on Bonding Characteristics in Cu-Cu Direct Bonds (Cu 두께에 따른 Cu-Cu 열 압착 웨이퍼 접합부의 접합 특성 평가)

  • Kim, Jae-Won;Jeong, Myeong-Hyeok;Carmak, Erkan;Kim, Bioh;Matthias, Thorsten;Lee, Hak-Joo;Hyun, Seung-Min;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.4
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    • pp.61-66
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    • 2010
  • Cu-Cu thermo-compression bonding process was successfully developed as functions of the deposited Cu thickness and $Ar+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the interfacial toughness was measured by 4-point bending test. Pre-annealing with $Ar+H_2$ gas at $300^{\circ}C$ is effective to achieve enough interfacial adhesion energy irrespective of Cu film thickness. Successful Cu-Cu bonding process achieved in this study results in delamination at $Ta/SiO_2$ interface rather than Cu/Cu interface.