• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.579-584
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• 2012

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.6
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• pp.1399-1404
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• 2015

This paper analyzed the phenomenon of drain induced barrier lowering(DIBL) for the ratio of channel length vs. thickness of asymmetric double gate(DG) MOSFET. DIBL, the important secondary effect, is occurred for short channel MOSFET in which drain voltage influences on potential barrier height of source, and significantly affects on transistor characteristics such as threshold voltage movement. The series potential distribution is derived from Poisson's equation to analyze DIBL, and threshold voltage is defined by top gate voltage of asymmetric DGMOSFET in case the off current is 10^-7 A/m. Since asymmetric DGMOSFET has the advantage that channel length and channel thickness can significantly minimize, and short channel effects reduce, DIBL is investigated for the ratio of channel length vs. thickness in this study. As a results, DIBL is greatly influenced by the ratio of channel length vs. thickness. We also know DIBL is greatly changed for bottom gate voltage, top/bottom gate oxide thickness and channel doping concentration.

• Journal of IKEEE
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• v.26 no.2
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• pp.306-312
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• 2022

We investigated electrical properties and deep level traps in 4H-SiC merged PiN Schottky (MPS) diodes with different barrier heights by different PN ratios and metallization annealing temperatures. The barrier heights of MPS diodes were obtained in IV and CV characteristics. The leakage current increased with the lowering barrier height, resulting in 10 times larger current. Additionally, the deep level traps (Z_1/2 and RD_1/2) were revealed by deep level transient spectroscopy (DLTS) measurement in four MPS diodes. Based on DLTS results, the trap energy levels were found to be shallow level by 22~28% with lower barrier height It could confirm the dependence of the defect level and concentration determined by DLTS on the Schottky barrier height and may lead to incorrect results regarding deep level trap parameters with small barrier heights.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.799-804
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• 2016

To analyze the phenomenon of drain induced barrier lowering(DIBL) for top and bottom gate oxide thickness of asymmetric double gate MOSFET, the deviation of threshold voltage is investigated for drain voltage to have an effect on barrier height. The asymmetric double gate MOSFET has the characteristic to be able to fabricate differently top and bottom gate oxide thickness. DIBL is, therefore, analyzed for the change of top and bottom gate oxide thickness in this study, using the analytical potential distribution derived from Poisson equation. As a results, DIBL is greatly influenced by top and bottom gate oxide thickness. DIBL is linearly decreased in case top and bottom gate oxide thickness become smaller. The relation of channel length and DIBL is nonlinear. Top gate oxide thickness more influenced on DIBL than bottom gate oxide thickness in the case of high doping concentration in channel.

• Journal of the Korean Chemical Society
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• v.39 no.10
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• pp.806-811
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• 1995

The electrical properties for $(Ba,Sr)_{1-x}Y_xTiO_3$(x=0.001∼0.009, BSYT) with a positive temperature coefficient of resistivity(PTCR) effect were investigated. The BSYT powder was prepared by oxalate coprecipitation method. It was found that the large PTCR effect was appeared up to 0.3 mol% and decreased above 0.5 mol% of the yttrium concentration. The plot of temperature vs. $1{\varepsilon}$m(T) above Curie temperature($T_c$) was agreed with Curie-Weiss law. The potential barrier calculated from measured resistivity and dielectric constant of specimens was high up to 0.3 mol% and reduced above 0.5 mol% of yttrium concentration as the curve of PTCR effect.

• Proceedings of the KIEE Conference
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• 2008.05a
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• pp.181-182
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• 2008

고 효율의 유기 발광 소자 개발을 위해 무엇보다 발광 소자의 각층의 에너지 대 구조를 고려한 구조 개선과 새로운 유기물질 합성을 통해 구동전압을 낮춤으로써 전력효율을 높이고, 소모 전력을 낮추며, 수명을 증가시킬 수 있어, 많은 연구자들이 유기 발광 소자의 효율을 향상시키기 위해 다양한 노력들을 시도하고 있다. 본 연구에서는 고 효율화를 위한 방법으로 유기 발광 소자에 있어서 전자주입에 필요한 전압을 낮추고 전자 주입을 촉진시키기 위하여 발광물질의 LUMO(LOWEST UNOCCUPIED MOLECULAR ORBITAL) 준위와 음극 금속의 페르미 준위를 고려하여 전자 주입시 전위 장벽을 낮출 수 있는 에너지 대 구조를 가진 전자 주입 층을 검토하였고, 정공 주입을 촉진시키기 위하여 양극 금속의 페르미 에너지 준위와 발광 층의 HOMO(HIGHEST OCCUPIED MOLECULAR ORBITAL) 준위를 고려하여 정공 주입시 전위장벽을 낮출 수 있는 적절한 에너지 대 구조를 가진 정공 주입 층에 대하여 고찰하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.12
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• pp.2247-2252
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• 2008

The SiOC films as the carbon doped silicon oxide film were prepared with the variation of flow rater ratios by plasma enhanced chemical vapor deposition. The samples were analyzed by the fourier transform infrared spectroscopy, I-V measurement and scanning electron microscopy. The samples were shown the chemical shift according to the flow rate ratios, and the grain did not formed at the sample with hybrid properties. The leakage currents decreased according to the increasing of the substrate temperature at the sample with hybrid properties, but the potential barrier increased.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.11
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• pp.2643-2648
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• 2015

This paper analyzes the phenomenon of drain induced barrier lowering(DIBL) for doping profiles in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to the change of doping profile to influence on potential distribution. As a results, the DIBL is significantly influenced by projected range and standard projected deviation, the variables of channel doping profiles. The change of DIBL shows greatly in the range of high doping concentration such as $10^{18}/cm^3$. The DIBL increases with decrease of channel length and increase of channel thickness, and with increase of bottom gate voltage and top/bottom gate oxide film thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.240-241
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• 2005

비 직선적 정(+) 저항온도계수 특성을 갖는 PTC thermistor는 전이온도(큐리점) 부근에서 온도변화에 대하여 극히 큰 저항 값의 변화를 나타내는 산화물계반도체 저항기(또는 발열체)로써, 일반적으로 반도체의 온도-저항 특성과 같이 상온영역에서 온도의 상승과 함께 부성저항 특성을 나타내다가 온도가 점점 증가하여 큐리점 부근에 도달하면 저항이 급격히 증가하는 독특한 특성을 갖는다. Perovskite 구조의 $BaTiO_3$를 주성분으로 미량의 Dopant를 첨가하여 도전성을 갖게 한 N형 반도체의 일종으로 저항-온도 특성 전류-전압 특성, 전류감쇄 특성 등을 이용하여 과전류 보호회로, 히터, TV 소자회로(degausser), 모터기동회로, 온도센서, 정온발열기기 등으로 널리 사용된다. 본 연구는 큐리점 부근의 급격한 저항변화 현상과 결정입계의 전위장벽 형성 및 그에 따른 정온발열 기능의 상관성으로부터 그 응용성을 조사하였다.

• Journal of Industrial Convergence
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• v.21 no.7
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• pp.83-92
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• 2023

The bullet shape of the plasma jet using the atmospheric-pressure dielectric barrier discharge method changes depending on the applied fluid rate and the intensity of the electric field. This changes appear as a difference in spectral distribution due to a difference in density of the DBD plasma jet. It is an important factor in utilizing the plasma device that difference between the occurrence of active species and the intensity through the analysis of the spectrum of the generated plasma jet. In this paper, a plasma jet generator of the atmospheric pressure volume DBD method using Ar gas was make a prototype in accordance with the proposed design method. The characteristics jet fluid rate analysis of Ar gas was accomplished through simulation to determine the dependence of flow rate for the generation of plasma jets, and the characteristics of plasma jets using spectrometers were analyzed in the prototype system to generate optimal plasma jet bullet shapes through MFC flow control. Through the design method of the proposed system, the method of establishing the optimal plasma jet characteristics in the device and the results of active species on the EOS were verified.