• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.3
• /
• pp.137-142
• /
• 2004

A voltage transformer(VT) used for the estabilishment of high voltage national standard, has generally ratio error and phase angle error. Both errors in VT depend critically on values of external burden of VT used. Both ratio ewer and phase angle error in existence of the external burden is calculated. These calculated values are very well consistent with the experimental result. The principle and the measurement method of VT in our institute are also explained.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.3
• /
• pp.134-141
• /
• 2006

A potential transformer(PT) has ratio error and phase angle error. Precise measurement of the errors of PT can be achieved using high voltage capacitance bridge, high voltage capacitor and low voltage capacitor. The uncertainty for this method is evaluated and found to be $20{\times}10^{-6}$ in both ratio error and phase angle error. The values measured for PT using the method are well consistent with the those measured for same PT in NMIA(National Measurement Institute of Australia) within the corresponding uncertainty.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.9
• /
• pp.470-474
• /
• 2004

Both ratio error and phase angle error in voltage transformer(VT) depend on values of burden of VT used. A method of evaluation for linearity of ratio error and phase angle error in VT measurement equipment have been developed using the standard resistance burdens, with negligible AC-DC resistance difference less than $10^-6$. These burden consists of five standard resistors, with nominal resistance of 100 $\Omega$, 1 k$\Omega$, 10 k$\Omega$, 100 k$\Omega$, and 1 M$\Omega$. The developed method has been applied in VT measurement equipment of industry and the validity of the developed method has been verified by showing the consistency of the result of linearity obtained using VT with wide ratio error.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.6
• /
• pp.317-322
• /
• 2006

A accurate potential transformer(PT) with the nominal ratio errors in the wide range of - 9 % to + 11 % has been developed. The developed wide ratio error PT can be used to evaluate the linearity of the PT comparator by comparing both the theoretical values as standard values and experimental values of the PT. The new method has been successfully applied for calibration and correction in the PT comparator including very low ratio error values from ${\pm}0.005%$ to ${\pm}0.3%$ belonging to industry.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.37 no.8
• /
• pp.33-44
• /
• 2000

The lightning with high voltage and current can enter the basestations for mobile communication through their antenna. The device which can protect the basestation against the lightning, is surge arrestor. In this paper, the concept, kind, operating mechanism, design and fabrication of surge arrestor were studied. Based on the studied data, variable surge arrestors were designed for the current mobile communication service like a cellular, GSM and PCS and the next generation mobile communication like a IMT-2000. Computer simulation for the prediction of their characteristics and inner structure optimization for the improvement of their electrical characteristics were carried with high frequency 3D structure simulator. Quarter wave short stub surge arrestors for IMT-2000 were fabricated with their final design and then the measurement of electrical characteristics and the lightning test were executed. As a results of measurement, we obtained below 1.05 of VSWR, -0.035 dB of insertion loss, -150 dBc of intermodulation and 7∼ll V of residual voltage.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.22 no.1
• /
• pp.141-148
• /
• 2008

This paper presents experimental results on the safety of persons and protection of low-voltage equipments of the sub-station due to a single-phase ground fault in 22.9 kV-Y distribution system. In order to evaluate the hazard voltages and the stress voltage of the low-voltage(LV) equipment due to faults between high-voltage systems and earth based on the newly prescribed KS C IEC 60364 standard series, the verification tests in a 22.9[kV] neutral multiple grounding system were carried out. From the experimental results, we introduce serious problems causing some discomfort when applying KS C IEC 60364 standard series to the existing domestic distribution system and the effective protective measures against temporary overvoltages due to a ground fault in the common grounding which is combined the 22.9 kV-Y grounding and the customer's installation grounding are proposed. As a consequence, it was found that the equipotential bonding is an important prerequisite for the effectiveness of the protective measures for the safety of persons and LV equipment in the combined 22.9 kV-Y and low-voltage grounding system.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.184-184
• /
• 2010

Write-once-read-many times (WORM) 메모리 소자는 1회에 한해 쓰기 가능한 저장 장치로서 반영구적인 기록 보존을 필요로 하는 분야에서 널리 사용되는 저항 구조의 비휘발성 메모리 소자이다. 무기물을 사용한 WORM 메모리 소자의 제작과 소자의 전기적 특성에 관한 많은 연구가 활발히 진행되었으나 절연성 고분자인 Polystyrene (PS) 박막에 분산된 ZnO 나노입자를 이용한 무기물/유기물 복합 구조의 WORM 메모리 소자에 관한 연구는 상대적으로 미흡하다. 본 연구에서는 ZnO 나노입자가 분산되어 있는 PS를 스핀코팅 방법으로 박막 형태로 증착하여 WORM 메모리 소자를 제작하고 전기적인 성질을 조사하였다. 소자를 제작하기 위해 ZnO 나노 입자와 PS를 용매인 N,N-디메틸포메미드에 혼합하여 소자를 제작하였다. 그 후 하부 전극인 ITO가 증착되어 있는 유리 기판 위에 ZnO와 PS가 분산되어 있는 고분자 용액을 스핀 코팅 방법으로 도포한 후에 열을 가해 용매를 제거하여 박막을 형성하였다. ZnO 나노입자가 분산되어 있는 PS 박막 위에 Al을 상부 전극으로서 증착하였다. 전압을 인가하여 측정한 전류-전압 특성은 1.5 V에서 소자의 전도도가 크게 향상이 되는 것을 관측하였다. 읽기 전압에서 낮은 전도도(OFF 상태)와 높은 전도도 (ON 상태)의 크기는 $10^3$으로 이며, ON 상태가 된 이후에는 OFF 상태로 전환되지 않는 전형적인 WORM 메모리 소자의 특성이 관측되었다. ZnO 나노 입자가 없이 PS 만으로 박막을 제작한 소자는 쌍안정성 특성이 나타나지 않았다. 따라서 소자에서 전류 쌍안정성으로 나타난 원인은 PS안에 분산되어 있는 ZnO 나노입자에 기인함을 알 수 있었다. 제작된 WORM 메모리 소자의 기억 유지 특성에 대한 결과는 장시간에 걸친 측정에서 ON 전류 및 OFF 전류의 변화가 거의 없었다. 이 실험 결과는 제작된 무기물/유기물 복합 구조를 가진 WORM 메모리 소자는 우수한 기억 특성을 가지고 있으며 반영구적인 메모리 소자로 사용할 수 있음을 제시하고 있다.

• Journal of the Korean Vacuum Society
• /
• v.9 no.4
• /
• pp.382-388
• /
• 2000

Hydrogenated amorphous carbon (a-C:H) films were fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. The bonding structure of carbon and hydrogen in the a-C:H films has been investigated by varying the deposition conditions such as ECR power, gas composition of methane and hydrogen, deposition time, and negative DC self bias voltage. The bonding characteristics of the a-C:H thin film were analyzed using FTIR spectroscopy. The IR absorption peaks of the film were observed in the range of $2800\sim3000 \textrm{cm}^{-1}$. The atomic bonding structure of a-C:H film consisted of $sp^3$ and $sp^2$ bonding, most of which is composed of $sp^3$ bonding. The structure of the a-C:H films changed from $CH_3$ bonding to $CH_2$ or CH bonding as deposition time increased. We also found that the amount of dehydrogenation in a-C:H films was increased as the bias voltage increased.

• Proceedings of the KIPE Conference
• /
• 2009.11a
• /
• pp.219-221
• /
• 2009

태양전지 어레이(PV-array)로부터 발전되는 DC 전력을 AC로 변환시켜 계통으로 발전시키는 역할을 하는 태양광 발전 시스템용 PCS의 스위칭 회로 Topology로는 일반적으로 3상 풀브리지 회로가 사용된다. 이러한 3상 풀브리지 회로 시스템의 수명예측을 위해 DC link 단의 커패시터의 커패시턴스를 계산하여 커패시턴스의 감소정도를 이용하여 전체 시스템의 수명을 예측하게 된다. 이러한 커패시터의 상태를 추정하기 위해서는 시스템을 정지시킨 후 커패시터를 분리하여 커패시턴스를 측정하는 방법, 특정 주파수의 전류(일반적으로 저주파)를 주입하고 주입한 전류의 주파수에 해당하는 전류 및 전압을 검출하여 capacitance 연산하는 방식등이 이용된다. 시스템을 정지시킨 후 커패시터를 분리하여 커패시턴스를 측정하는 방법은 번거로우며, 전류 주입을 이용한 방식은 불필요한 고조파 전류가 계통으로 침투하는 단점을 가진다. 그러므로 본 연구에서는 모듈타입 PCS 이용시 계통으로 고조파 침투가 없는 비침투 커패시턴스 계산 알고리즘을 제안한다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2013.10a
• /
• pp.67-68
• /
• 2013

In this paper, a super wideband printed dipole antenna operating in the band of 1-15 GHz is studied. A semi-circular-shaped dipole element is used to obtain a super wideband characteristic. Optimal design parameters are obtained by analyzing the effects of the gap between the two arms of the semi-circular-shaped dipole and the radius of the semi-circle on the input reflection coefficient and gain characteristics. The optimized printed semi-circular-shaped dipole antenna is fabricated on an FR4 substrate with a dimension of $100mm{\times}100mm$. Experimental results show that the antenna has a desired super wideband characteristic with a frequency band of 1-15 GHz (bandwidth ration 15:1, 175%) for a VSWR < 2.