• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.6
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• pp.1422-1428
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• 2014

This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.741-744
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• 2014

This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.4
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• pp.903-908
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• 2015

This paper has analyzed threshold voltage shift for doping profile of asymmetric double gate(DG) MOSFET. Ion implantation is usually used in process of doping for semiconductor device and doping profile becomes Gaussian distribution. Gaussian distribution function is changed for projected range and standard projected deviation, and influenced on transport characteristics. Therefore, doping profile in channel of asymmetric DGMOSFET is affected in threshold voltage. Threshold voltage is minimum gate voltage to operate transistor, and defined as top gate voltage when drain current is $0.1{\mu}A$ per unit width. The analytical potential distribution of series form is derived from Poisson's equation to obtain threshold voltage. As a result, threshold voltage is greatly changed by doping profile in high doping range, and the shift of threshold voltage due to projected range and standard projected deviation significantly appears for bottom gate voltage in the region of high doping concentration.

• Journal of the Korea Computer Industry Society
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• v.4 no.12
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• pp.1013-1020
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• 2003

In this paper, the discharge properties due to time variation were investigated in order to estimate a electrical performance of the insulator for small transformer. AC 10[kVl applied to specimen was converted to $\pm$5[V] and stored to personal computer through A/D converter. A period of applied wave form and discharge values were divided into 64 parts and discharge values generated during 10 seconds were accumulated by phases. As a result, it was confirmed that count of discharge, total discharge and the variation degree of average discharge were decreased as time elapsed.

• Journal of Advanced Navigation Technology
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• v.22 no.5
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• pp.420-428
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• 2018

In this paper, represented uninterruptible power supply (UPS) equipment maintaining constant output voltage, the proposes a photovoltaic system constructed with a step up boosting chopper and single phase pulse width modulation (PWM) voltage source inverter. as power source disconnection, voltage variation and output current variation with load variation. This system is driven by being synchronized voltage fed inverter and AC source, and in the steady state of power source charge battery connected to DC side with solar cell using a Photovoltaic that it was so called constant voltage charge. It can be results of saving electric power, and through a normal operation of energy storage system (ESS), the system operated the LED a calling on signal changes at the airport in an efficient manner. In addition, better output waveform was generated because of PWM method, and it was proved to test by experiment maintained constant output voltage regardless of AC source disconnection, load variation, and voltage variation of AC power source.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1349-1354
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• 2011

In this work, we fabricated the CdZnS/CdTe heterojunction and investigated the C-V characteristics to determine the depletion width and the charge density distribution. A parallel experiment on CdS/CdTe heterojunction was also carried out for comparison. The depletion region width, for CdZnS/CdTe heterojunction, was nearly constant, regardless of bias voltage. However, the depletion region was wider than that of CdS/CdTe heterojunction due to high resistivity of CdZnS film. The interface charge density of CdZnS/CdTe heterojunction was increased linearly with the bias voltage and showed lower values than those for CdS/CdTe junction. The open circuit voltage of CdZnS/CdTe heterojunction solar cells increased with zinc mole ratio due to reducing of the electron affinity difference between CdZnS and CdTe films. However, the increase of series resistance due to the high resistivity of Cd1-xZnxS films results in reducing conversion efficiency.

• Journal of the Korean Institute of Telematics and Electronics
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• v.9 no.3
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• pp.1-8
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• 1972

The characteristics of tunnel diode pair circuit biased within the negative resistance region has also the voltage-control type negative resistance region, and the voltage at the center point of negative resistance region is described as the square-wave relaxation oscillation. In this paper, the period T, positive duration T1, negative duration T2 of the pulse are obatined from the characteristic curve T, positive duration T1, negative duration T2 of the pulse are obtained from the characteristic curve and observed actually, considring the fact that the pulse width and the period of square-wave at the center point of the negative resistance region is able to be controlle dby the blas volgate. Mereover, the relationship between T, T1 or T2 and circuit parameters is searched for and the Circuit parameters that satisfy the conditions of T1-T2 being proportional to the variation of bias voltage with Teonstant are determined. Thereafter, the bias voltage and the signal voltage are inserted serially to the PWM circuit and the characteristics of that circuit is analyzed.

• Electrical & Electronic Materials
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• v.4 no.3
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• pp.249-258
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• 1991

He-Ne레이저(.lambda.=0.6328[.mu.m])를 광원으로 사용하는 y-cut LiNbO$_{3}$기판의 광 도파로 형성 과정을 빔 전송방식 메카니즘을 이용하여 광 도파로에서 광파의 전계 변화 및 전계 분포에 대하여 시뮬레이션 하였다. 그리고 Xl(55[.mu.m])* Zl(5000[.mu.m])인 LiNbO$_{3}$기판의 광 도파로 폭을 4[.mu.m], 버퍼층을 0.02[.mu.m]로 하였을때 도파로 층의 깊이가 0.2[.mu.m]인 지점에서 인가전압에 대한 x방향의 전계(E$_{x}$)와 y방향의 전계(E$_{y}$ )분포를 관찰하였다. 또한 단일 도파로의 파라미터 조건을 적용하여 X-스위치를 구성하였을때 전계를 인가하지 않은 상태에서 굴절율 변화(dn) 0.002, 도파로 폭(w) 3[.mu.m]로 하여 도파로의 교차각(.alpha.)을 0.4.deg.~0.6.deg.로 변화시킨 경우, .alpha.=0.5.deg.와 0.6.deg.일 때는 광빔이 bar측으로 출력되었고 .alpha.=0.4에서는 광빔이 cross측으로 출력 됨을 확인하였다. 따라서 위에서 확인된 도파로의 교차각 .alpha.=0.4.deg.인 경우, 전극간격(gap)이 2[.mu.m]인 조건에서 스위칭 전압을 인가하였을 때 25[V]에서 전기광학 효과에 의하여 광빔이 cross측에서 bar측으로 변조됨을 확인함으로써 X-스위치 광변조기의 기본적인 설계조건을 구현하였다.

• Korean Chemical Engineering Research
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• v.51 no.3
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• pp.370-375
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• 2013

We analyze the effects of CO poisoning and air bleeding on the performance of a PEM (polymer electrolyte membrane) fuel cell stack fabricated using commercial MEA (membrane electrode assembly). Dynamic response data from the experiments on the performance of a stack are identified by obtaining steady-state gains and time-constants of the first-order system model expressed as a first-order differential equation. It is found that the cell voltage of the stack decreases by 1.3-1.6 mV as the CO concentration rises by 1 ppm. The time elapsed to reach a new steady state after a change in the CO concentration is shortened as the magnitude of the change in the CO concentration increases. In general, the steady-state gain becomes bigger and the time-constant gets smaller with increasing the air concentration (air-bleeding level) in the reformate gas to restore the cell voltage. However, it is possible to recover 87%-96% of the original cell voltages, which are measured with free of CO, within 1-30 min by introducing the bleed air as much as 1% of the reformate gas into the stack.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.204-204
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• 2000

AC-PDP로부터 방출된 빛의 방전 현상을 이해하고자 시간-공간상으로 분해된 방전이미지를 유지방전시 진동수와 유지방전전압에 따라 조사하였다. 방전이미지는 방전전류가 최대인 지점에서 최대 밝기를 가지며 전류량이 많을수록 향상됨을 볼 수 있었다. 사용된 패널은 전극폭 260umm, 전극간격 100um, 격벽높이 120um, 기압은 400Torr로 Ne-Xe(4%) 가스를 사용하였다. 실험조건은 진동수 50KHz, 100KHz, 150KHz와 유지방전전압 170V, 180V, 190V, 200V에 따른 방전이미지의 변화된 형태를 고찰하였다.