• Journal of IKEEE
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• v.11 no.4
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• pp.158-164
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• 2007

In this study, three types of a novel Trench IGBTs(Insulated Gate Bipolar Transistor) are proposed. The first structure has P-collector which is isolated by $SiO_2$ layer to enhance anode-injection-efficiency and enable the device to have a low on-state voltage drop(Von). And the second structure has convex P-base region between both gates. This structure may be effective to distributes electric-field crowded to gate edge. So this structure can have higher breakdown voltage(BV) than conventional trench-type IGBT(TIGBT). The process and device simulation results show improved on-state, breakdown and switching characteristics in each structure. The first one was presented lower on state voltage drop(2.1V) than that of conventional one(2.4V). Also, second structurehas higher breakdown voltage(1220V) and faster turn off time(9ns) than that of conventional structure. Finally, the last one of the proposed structure has combined the two structure (the first one and second one). This structure has superior electric characteristics than conventional structure about forward voltage drop and blocking capability, turnoff characteristics.

• Journal of Korea Society of Industrial Information Systems
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• v.20 no.6
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• pp.29-36
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• 2015

This paper presents an LED backlight driver IC consisting of three linear current regulators and an output-voltage regulation loop with a self-adjustable reference voltage. In the proposed LED driver, the output voltage is controlled by dual feedback loops. The first loop senses and controls the output voltage, and the second loop senses the voltage drop of the linear current regulator and adjusts the reference voltage. With these feedback loops, the voltage drop of the linear current regulator is maintained at a minimum value, at which the driver efficiency is maximized. The output of the driver is a three-channel LED setup with four LEDs in each channel. The luminance is adjusted by the PWM dimming signal. The proposed driver is designed by a $0.35-{\mu}m$ 60-V high-voltage process, resulting in an experimental maximum efficiency of approximately 85%.

• JOURNAL OF ELECTRICAL WORLD
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• s.288
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• pp.32-39
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• 2000

• JOURNAL OF ELECTRICAL WORLD
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• s.289
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• pp.40-44
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• 2001

• KIPE Magazine
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• v.13 no.2
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• pp.28-31
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• 2008

• Proceedings of the KIEE Conference
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• 2004.11b
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• pp.5-8
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• 2004

최근 생활수준의 향상과 정보통신 산업의 급속한 발전으로 인하여 전세계적으로 전력품질에 대한 관심이 높아져, 각종 전력품질 개선장치로부터 최적 공급시스템에 이르기까지 다양한 각도에서 전력품질을 향상하기 위한 연구개발이 수행되고 있으며, 특히 정보통신기기 및 정밀제어기기 등의 보급증가로 전압품질에 대한 관심이 높아져가고 있다. 지금까지 배전계통의 전압관리는 배 전용변전소 ULTC(Under Load Tap Changer)와 고압배전선로의 주상변압기에 의해 조정되어 왔으며 최근에 고압배전선로의 전압강하가 5%를 초과하는 선로에 대한 효율적 전압관리를 위해 선로전압조정장치(SVR- Step Voltage Regulator)가 도입되고 있다. 그러나 배 전용변전소와 고압배전선로의 선로전압 조정장치가 서로 독립적으로 운용되고 있기 때문에 선로전압조정장치의 효율성이 떨어지고 있는 실정이다. 그러므로 본 논문에서는 배 전용변전소와 선로전압조정장치의 ULTC 송출전압의 최적 전압조정을 위한 협조운용 방안을 제시하고자 한다.

• Proceedings of the KIEE Conference
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• 2008.04c
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• pp.125-127
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• 2008

기존의 LED(Light Emitting Diode)를 이용한 LCD(Liquid Crystal Display) 백라이트 유닛은 LED에 과전류가 흐르면 소자의 파손이 발생하고 무부하시 불필요한 전력소모가 발생하는 경우가 있어 보호회로가 필요하였다. 그래서 본 논문은 보호회로를 이용한 LCD 백라이트 유닛용의 LED 구동회로를 제안한다. 제안된 보호회로는 2가지로 첫 번째 보호회로는 무부하시 소비전력을 줄이는 보호회로 이다. 시뮬레이션 결과 무부하시 피드백 제어부 IC(Integrated Circuit)의 전원전압 $V_{cc}$를 UVLO(Under Voltage Lock Out)전압 이하로 강하시켰다. 그래서 무부하시 소비되는 전력을 줄일 수 있었다. 두번째 보호회로는 과전류시 보호회로 이다. 시뮬레이션 결과 과전류시 SCR이 온 되어 피드백 제어부 IC의 전원전압 $V_{cc}$를 UVLO전압 이하로 강하시켰다. 따라서 과전류시 LED 동회로 소자의 파손을 방지할 수 있는 장점이 있다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.5
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• pp.53-60
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• 2002

This paper presents exact autotransformer-fed AC electric railroad system modeling using constant current mode, and single-phase STATCOM(Static Synchronous Compensator) which has an effect on electric railroad system. An AC electric railroad is rapidly changing single-phase feeding electric power. To avoid voltage fluctuation under single phase loads, electric power should be received from a large source. The system modeling theory is based on the solution of algebraic. The AC electric railroad load model is nonlinear. Therefore this paper is considered nonlinear load using PSCAD/EMTDC. And the proposed modeling method is considered the line self-impedances and mutual-impedances that techniques for the AC electric railroad system modeling analysis, and that single-phase STATCOM can reliably compensate the voltage drop. In the case study, the allowance range of feeding voltage is 22.5∼27.5 kV, AT-fed AC electric railroad system circuit is analyzed by loop equation both normal and extension modes. The simulation objectives are to calculate the catenary and rail voltages with respect to ground, as the train moves along a section of line between two adjacent ATs. The results show that single-phase STATCOM can reduce the voltage drop in the feeding circuit and improve the power quality at AC electric railroad system by compensating the reactive power.

• Journal of IKEEE
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• v.12 no.2
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• pp.110-117
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) based on Non Punch Through(NPT) IGBT structure for power switching device. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The added n+ diffusion of the proposed device ensure device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure. But, added n+ region can reduce th breakdown voltage and latching current density of the proposed device due to its high doping concentration. This problems can be overcome by using diverter on the right side of the device. In the simulation results, turn-off time of the proposed device is 0.3us and the on-state voltage drop is 3V. The results show that the proposed device has superior characteristic than conventional structure.

• Journal of IKEEE
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• v.21 no.1
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• pp.73-76
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• 2017

SiC devices have drawn much attentions for its wide band gap material properties. Especially 4H-SiC Schottky barrier diode is widely used for its rapid switching speed and low forward voltage drop. However, the low reliability of Schottky barrier diode has many problems that Super Barrier Rectifier(SBR) was researched for alternative. makes 4H-SiC trench-type accumulation super barrier rectifier(TASBR) is analyzed and proposed in this paper. We could verified that forward voltage drop was improved 21.06% without severe degradation of reverse breakdown voltage and leakage current based on the results from 2-D numerical simulations. With this novel rectifier structure, we can expect application with less power loss.