• Journal of IKEEE
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• v.27 no.1
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• pp.122-126
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• 2023

In this paper, a control system for a complex microbial incubator was proposed. The proposed control system consists of a control unit, a communication unit, a power supply unit, and a control system of the complex microbial incubator. The controller of the complex microbial incubator is designed and manufactured to convert analog signals and digital signals, and control signals of sensors such as displays using LCD panels, water level sensors, temperature sensors, and pH concentration sensors. The water level sensor used is designed and manufactured to enable accurate water level measurement by using the IR laser method with excellent linearity in order to solve the problem that existing water level sensors are difficult to measure due to foreign substances such as bubbles. The temperature sensor is designed and used so that it has high accuracy and no cumulative resistance error by measuring using the thermal resistance principle. The communication unit consists of two LAN ports and one RS-232 port, and is designed and manufactured to transmit signals such as LCD panel, PCT panel, and load cell controller used in the complex microbial incubator to the control unit. The power supply unit is designed and manufactured to supply power by configuring it with three voltage supply terminals such as 24V, 12V and 5V so that the control unit and communication unit can operate smoothly. The control system of the complex microbial incubator uses PLC to control sensor values such as pH concentration sensor, temperature sensor, and water level sensor, and the operation of circulation pump, circulation valve, rotary pump, and inverter load cell used for cultivation. In order to evaluate the performance of the control system of the proposed complex microbial incubator, the result of the experiment conducted by the accredited certification body showed that the range of water level measurement sensitivity was -0.41mm~1.59mm, and the range of change in water temperature was ±0.41℃, which is currently commercially available. It was confirmed that the product operates with better performance than the performance of the products. Therefore, the effectiveness of the control system of the complex microbial incubator proposed in this paper was demonstrated.

• Journal of the Korean Society of Radiology
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• v.17 no.3
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• pp.441-447
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• 2023

Lead(Pb), which is currently mainly used for shielding purposes in the medical radiation, has excellent radiation shielding functions, but is continuously exposed to radiation directly or indirectly due to the harmfulness of lead itself to the human body and the inconvenience caused by its heavy weight. Research on shielding materials that are human-friendly, lightweight, and convenient to use that can block risks and replace lead is continuously being conducted. In this study, based on the commonly used polyethylene terephthalate (PET) film and the fabric material used in actual radiation protective clothing, a multi-layer thin film was realized through sputtering and vacuum deposition of bismuth, tungsten, and tin, which are metal materials that can shield radiation. Thus, a shielding film was produced and its applicability as a radiation shielding material was evaluated. The radiation shielding film was manufactured by establishing the optimized conditions for each shielding material while controlling the applied voltage, roll driving speed, and gas supply amount to manufacture the shielding film. The adhesion between the parent material and the shielding metal thin film was confirmed by Cross-cut 100/100, and the stability of the thin film was confirmed through a hot water test for 1 hour to measure the change of the thin film over time. The shielding performance of the finally realized shielding film was measured by the Korea association for radiation application (KARA), and the test conditions (inverse wide beam, tube voltage 50 kV, half layer 1.828 mmAl) were set to obtain an attenuation ratio of 16.4 (initial value 0.300 mGy/s, measured value 0.018 mGy/s) and damping ratio 4.31 (initial value 0.300 mGy/s, measured value 0.069 mGy/s) were obtained. by securing process efficiency for future commercialization, light and shielding films and fabrics were used to lay the foundation for the application of films to radiation protective clothing or construction materials with shielding functions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.83-90
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• 2023

The β-Ga₂O₃ has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga₂O₃ has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga₂O₃ single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga₂O₃ single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga₂O₃ were prepared by adding different mole ratios of SnO₂ powder to Ga₂O₃ powder, and β-Ga₂O₃ single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga₂O₃ single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga₂O₃ single crystal according to the Sn doping were extensively investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.4
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• pp.109-116
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• 2024

β-Ga₂O₃ is a representative ultra-wide bandgap (UWBG) semiconductor that has attracted much attention for power device applications due to its wide-bandgap of 4.9 eV and high-breakdown voltage of 8 MV/cm. In addition, because solution growth is possible, it has advantages such as fast growth rate and lower production cost compared to SiC and GaN [1-2]. In this study, we have successfully grown Si-doped 10 mm thick Si-doped β-Ga₂O₃ single crystals by the EFG (Edge-defined Film-fed Growth) method. The growth direction and growth principal plane were set to [010] / (010), respectively, and the growth speed was 7~20 mm/h. The as-grown β-Ga₂O₃ single crystal was cut into various crystal planes (001, 100, ${\bar{2}}01$) and off-angles (1^o, 3^o, 4^o), and then surface processed. After processed, the homoepitaxial layer was grown on the epi-ready substrate using the HVPE (Halide vapor phase epitaxy) method. The processed samples and the epi-layer grown samples were analyzed by XRD, AFM, OM, and Etching to compare the surface properties according to the crystal plane and off-angle.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.37 no.3
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• pp.196-213
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• 2001

A split beam ultrasonic transducer operating at a frequency of 70 kHz to use in the fish sizing echo sounder was developed and the acoustic radiation characteristics were experimentally analyzed. The amplitude shading method utilizing the properties of the Chebyshev polynomials was used to obtain side lobe levels below -20 dB and to optimize the relationship between main beam width and side lobe level of the transducer, and the amplitude shading coefficient to each of the elements was achieved by changing the amplitude contribution of elements with 4 weighting transformers embodied in the planar array transducer assembly. The planar array split beam transducer assembly was composed of 36 piezoelectric ceramics (NEPEC N-21, Tokin) of rod type of 10 mm in diameter and 18.7 mm in length of 70 kHz arranged in the rectangular configuration, and the 4 electrical inputs were supplied to the beamformer. A series of impedance measurements were conducted to check the uniformity of the individual quadrants, and also in the configurations of reception and transmission, resonant frequency, and the transmitting and receiving characteristics were measured in the water tank and analyzed, respectively. The results obtained are summarized as follows : 1. Average resonant and antiresonant frequencies of electrical impedance for four quadrants of the split beam transducer in water were 69.8 kHz and 83.0 kHz, respectively. Average electrical impedance for each individual transducer quadrant was 49.2$\Omega$ at resonant frequency and 704.7$\Omega$ at antiresonant frequency. 2. The resonance peak in the transmitting voltage response (TVR) for four quadrants of the split beam transducer was observed all at 70.0 kHz and the value of TVR was all about 165.5 dB re 1 $\mu$Pa/V at 1 m at 70.0 kHz with bandwidth of 10.0 kHz between -3 dB down points. The resonance peak in the receiving sensitivity (SRT) for four combined quadrants (quad LU+LL, quad RU+RL, quad LU+RU, quad LL+RL) of the split beam transducer was observed all at 75.0 kHz and the value of SRT was all about -177.7 dB re 1 V/$\mu$Pa at 75.0 kHz with bandwidth of 10.0 kHz between -3 dB down points. The sum beam transmitting voltage response and receiving senstivity was 175.0 dB re 1$\mu$Pa/V at 1 m at 75.0 kHz with bandwidth of 10.0 kHz, respectively. 3. The sum beam of split beam transducer was approximately circular with a half beam angle of $9.0^\circ$ at -3 dB points all in both axis of the horizontal plane and the vertical plane. The first measured side lobe levels for the sum beam of split beam transducer were -19.7 dB at $22^\circ$ and -19.4 dB at $-26^\circ$ in the horizontal plane, respectively and -20.1 dB at $22^\circ$ and -22.0 dB at $-26^\circ$ in the vertical plane, respectively. 4. The developed split beam transducer was tested to estimate the angular position of the target in the beam through split beam phase measurements, and the beam pattern loss for target strength corrections was measured and analyzed.