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Optimization of Soldering Process of Sn-3.0Ag-0.5Cu and Sn-1.0Ag-0.7Cu-1.6Bi-0.2In Alloys for Solar Combiner Junction Box Module (태양광 접속함 정션박스 모듈 적용을 위한 Sn-3.0Ag-0.5Cu 및 Sn-1.0Ag-0.7Cu-1.6Bi-0.2In 솔더링의 공정최적화)

  • Lee, Byung-Suk;Oh, Chul-Min;Kwak, Hyun;Kim, Tae-Woo;Yun, Heui-Bog;Yoon, Jeong-Won
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.3
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    • pp.13-19
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    • 2018
  • The soldering property of Pb-containing solder(Sn-Pb) and Pb-free solders(Sn-3.0Ag-0.5Cu and Sn-1.0Ag-0.7Cu-1.6Bi-0.2In) for solar combiner box module was compared. The solar combiner box module was composed of voltage and current detecting modules, diode modules, and other modules. In this study, solder paste printability, printing shape inspection, solder joint property, X-ray inspection, and shear force measurements were conducted. For optimization of Pb-free soldering process, step 1 and 2 were divided. In the step 1 process, the printability of Pb-containing and Pb-free solder alloys were estimated by using printing inspector. Then, the relationship between void percentages and shear force has been estimated. Overall, the property of Pb-containing solder was better than two Pb-free solders. In the step 2 process, the property of reflow soldering for the Pb-free solders was evaluated with different reflow peak temperatures. As the peak temperature of the reflow process gradually increased, the void percentage decreased by 2 to 4%, but the shear force did not significantly depend on the reflow peak temperature by a deviation of about 0.5 kgf. Among different surface finishes on PCB, ENIG surface finish was better than OSP and Pb-free solder surface finishes in terms of shear force. In the thermal shock reliability test of the solar combiner box module with a Pb-free solder and OSP surface finish, the change rate of electrical property of the module was almost unchanged within a 0.3% range and the module had a relatively good electrical property after 500 thermal shock cycles.

Development of a Finger Tactile Stimulator Based on E-Prime Software (E-Prime에 기반한 손가락 촉각 자극기의 개발)

  • Kim, Hyung-Sik;Min, Yoon-Ki;Kim, Bo-Seong;Min, Byung-Chan;Yang, Jae-Woong;Lee, Su-Jeong;Choi, Mi-Hyun;Yi, Jeong-Han;Tack, Gye-Rae;Lee, Bong-Soo;Jun, Jae-Hoon;Chung, Soon-Cheol
    • Science of Emotion and Sensibility
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    • v.13 no.4
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    • pp.703-710
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    • 2010
  • In this study, a tactile stimulator was developed to resolve some problems from the previous version of the system such as system configuration, inappropriate stimulation control and additional problems. The developed tactile stimulator consists of control unit, drive unit and vibrator unit. The control unit was controlled by E-Prime software to generate appropriate vibration pulses. The drive unit supplies enough energy to the vibrator to generate effective stimulation pulses. The vibrator unit consists of small coin type vibrator and velcro, and was made to be attached at the hand easily. The developed tactile stimulator was designed by small-size, light-weight, low-power, simple-fabrication, max 35 channels and little delay time from instruction signal of E-Prime software to vibrator. The duration and magnitude of stimulation was controlled by 10 grades and the problems concerning stimulation control were compensated by wideband frequency ranges. Additionally, the electrical safety was ensured by low voltage operation. Vibrator was made to be attached on finger as well as on any part of the subject. Since this tactile stimulator is developed based on E-Prime software which is widely used in cognitive science, it is believed that this stimulator be suitable for the wide application of cognitive science study.

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Macroporous Thick Tin Foil Negative Electrode via Chemical Etching for Lithium-ion Batteries (화학적 식각을 통해 제조한 리튬이온 이차전지용 고용량 다공성 주석후막 음극)

  • Kim, Hae Been;Lee, Pyung Woo;Lee, Dong Geun;Oh, Ji Seon;Ryu, Ji Heon
    • Journal of the Korean Electrochemical Society
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    • v.22 no.1
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    • pp.36-42
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    • 2019
  • A macroporous Sn thick film as a high capacity negative electrode for a lithium ion secondary battery was prepared by using a chemical etching method using nitric acid for a Sn film having a thickness of $52{\mu}m$. The porous Sn thick film greatly reduced the over-voltage for the alloying reaction with lithium by the increased reaction area. At the same time. The porous structure of active Sn film plays a part in the buffer and reduces the damage by the volume change during cycles. Since the porous Sn thick film electrode does not require the use of the binder and the conductive carbon black, it has substantially larger energy density. As the concentration of nitric acid in etching solution increased, the degree of the etching increased. The etching of the Sn film effectively proceeded with nitric acid of 3 M concentration or more. The porous Sn film could not be recovered because the most of Sn was eluted within 60 seconds by the rapid etching rate in the 5 M nitric acid. In the case of etching with 4 M nitric acid for 60 seconds, the appropriate porous Sn film was formed with 48.9% of weight loss and 40.3% of thickness change during chemical acid etching process. As the degree of etching of Sn film increased, the electrochemical activity and the reversible capacity for the lithium storage of the Sn film electrode were increased. The highest reversible specific capacity of 650 mAh/g was achieved at the etching condition with 4 M nitric acid. The porous Sn film electrode showed better cycle performance than the conventional electrode using a Sn powder.

Research on Radiation Shielding Film for Replacement of Lead(Pb) through Roll-to-Roll Sputtering Deposition (롤투롤 스퍼터링 증착을 통한 납(Pb) 대체용 방사선 차폐필름 개발)

  • Sung-Hun Kim;Jung-Sup Byun;Young-Bin Ji
    • Journal of the Korean Society of Radiology
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    • v.17 no.3
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    • pp.441-447
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    • 2023
  • Lead(Pb), which is currently mainly used for shielding purposes in the medical radiation, has excellent radiation shielding functions, but is continuously exposed to radiation directly or indirectly due to the harmfulness of lead itself to the human body and the inconvenience caused by its heavy weight. Research on shielding materials that are human-friendly, lightweight, and convenient to use that can block risks and replace lead is continuously being conducted. In this study, based on the commonly used polyethylene terephthalate (PET) film and the fabric material used in actual radiation protective clothing, a multi-layer thin film was realized through sputtering and vacuum deposition of bismuth, tungsten, and tin, which are metal materials that can shield radiation. Thus, a shielding film was produced and its applicability as a radiation shielding material was evaluated. The radiation shielding film was manufactured by establishing the optimized conditions for each shielding material while controlling the applied voltage, roll driving speed, and gas supply amount to manufacture the shielding film. The adhesion between the parent material and the shielding metal thin film was confirmed by Cross-cut 100/100, and the stability of the thin film was confirmed through a hot water test for 1 hour to measure the change of the thin film over time. The shielding performance of the finally realized shielding film was measured by the Korea association for radiation application (KARA), and the test conditions (inverse wide beam, tube voltage 50 kV, half layer 1.828 mmAl) were set to obtain an attenuation ratio of 16.4 (initial value 0.300 mGy/s, measured value 0.018 mGy/s) and damping ratio 4.31 (initial value 0.300 mGy/s, measured value 0.069 mGy/s) were obtained. by securing process efficiency for future commercialization, light and shielding films and fabrics were used to lay the foundation for the application of films to radiation protective clothing or construction materials with shielding functions.

Characteristics of Sn-doped β-Ga2O3 single crystals grown by EFG method (EFG 법으로 성장한 β-Ga2O3 단결정의 Sn 도핑 특성 연구)

  • Tae-Wan Je;Su-Bin Park;Hui-Yeon Jang;Su-Min Choi;Mi-Seon Park;Yeon-Suk Jang;Won-Jae Lee;Yun-Gon Moon;Jin-Ki Kang;Yun-Ji Shin;Si-Yong Bae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.2
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    • pp.83-90
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    • 2023
  • The β-Ga2O3 has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga2O3 has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga2O3 single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga2O3 single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga2O3 were prepared by adding different mole ratios of SnO2 powder to Ga2O3 powder, and β-Ga2O3 single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga2O3 single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga2O3 single crystal according to the Sn doping were extensively investigated.