• Title/Summary/Keyword: 전극접촉저항

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Characteristics of Bio-impedance for Implantable Electrode Design in Human Skin (인간 피부에 삽입형 전극설계를 위한 생체임피던스 특성)

  • Kim, Min Soo;Cho, Young-Chang
    • Journal of Korea Society of Industrial Information Systems
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    • v.19 no.4
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    • pp.9-16
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    • 2014
  • Electrode contact resistance is a crucial factor in physiological measurements and can be an accuracy limiting factor to perform electrical impedance measurements. The electrical bio-impedance values can be calculated by the conductivity and permittivity of underlying tissue using implant electrode in human skin. In this study we focus on detecting physiological changes in the human skin layers such as the sebum layer, stratum corneum layer, epidermis layer, dermis layer, subcutaneous fat and muscle. The aim of this paper is to obtain optimal design for implantable electrode at subcutaneous fat layer through the simulation by finite element methods(FEM). This is achieved by evaluating FEM simulations geometrically for different electrodes in length(50 mm, 70 mm), in shape(rectangle, round square, sexangle column), in material(gold) and in depth(22.325 mm) based on the information coming from the subcutaneous fat layer. In bio-impedance measurement experiments, according to electrode shapes and applied voltage, we have ascertained that there was the highest difference of bio-impedance in subcutaneous fat layer. The methodology of simulation can be extended to account for different electrode designs as well as more physical phenomena that are relevant to electrical impedance measurements of skin and their interpretation.

Electromagnetic and Thermal Analysis of Phase Change Device with Structure Charge (구조에 따른 상변화 소자의 전자장 및 열 해석)

  • Lim, Young-Jin;Jang, Nak-Won;Lee, Seong-Hwan;Lee, Dong-Young
    • Proceedings of the KIEE Conference
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    • 2006.10d
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    • pp.37-39
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    • 2006
  • 본 연구에서는 상변화소자의 구조 변화에 따른 열전달 현상과 reset 전류에 대한 시뮬레이션을 실행하였다. 상변화소자의 상변화재료의 profile에 따른 주울열의 발생 및 reset 전류의 변화량을 시뮬레이션 한 결과, 하부전극에서부터 도포되는 상변화재료 박막의 두께가 2000[A]인 경우는 541($^{\circ}C$)로 현저하게 발열온도가 낮아지는 것을 알 수 있다. 이는 저항체로 쓰이는 상변화재료의 저항 감소로 인해 발열량이 적게 되고 상변화재료를 통해 전달된 열이 상부전극 텅스텐과 접촉하면서 외부로 쉽게 전달되면서 빠져나감에 따라 온도가 많이 올라가지 않는 것으로 생각된다.

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Constant Power Control of Servo Gun-type Spot Welding System (서보건형 스폿용접기의 정전력 제어)

  • Kim Jin-Woo;Kim Gyu-Sik;Won Chung-Yuen;Choi Se-Wan
    • Proceedings of the KIPE Conference
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    • 2002.11a
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    • pp.85-88
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    • 2002
  • 저항 스폿용접은 두 개의 금속판을 서로 겹쳐서 양쪽에 전극으로 압력을 가하면서 대전류를 흘려보낼 때 재료의 접촉면의 저항에 의해 발생하는 줄울열을 이용하여 재료를 용융시켜 두 모재를 접합시키는 방법이다 산업현장의 자동 용접라인에서 로봇암의 끝단에 부착하여 사용하던 기존의 공압건은 시편에 주어지는 압력이 일정하여 실시간 가압력 변화가 어렵고, 전극벌림의 임의 조정이 불가능하였다. 본 연구에서는 서보 모터를 채용한 서보건 시스템의 실시간 가압력제어와 용접도중 일정한 파우어를 공급하는 정전력 제어방식을 이용하여 용접 품질을 향상시키고자 한다.

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Pd/Si-based Emitter Ohmic Contacts for AlGaAs/GaAs HBTs (AlGaAs/GaAs HBT 에미터 전극용 Pd/Si계 오믹 접촉)

  • 김일호
    • Journal of the Korean Vacuum Society
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    • v.12 no.4
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    • pp.218-227
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    • 2003
  • Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.

Effect of plating and annealing process of laser doped selective emitter solar cells (레이저 도핑된 선택적 에미터 태양전지의 도금 및 열처리 공정의 영향)

  • Lee, Junsung;Kyeong, Dohyeon;Hwang, Myungick;Oh, Hun;Lee, Wonjae;Cho, Eunchul
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.11a
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    • pp.48.2-48.2
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    • 2010
  • 고효율 실리콘 태양전지 개발은 단파장의 광 응답 특성 개선을 위한 선택적 에미터 형성과 반사 손실 개선을 위한 미세 패턴 전극을 형성하는데 집중적인 연구가 진행되고 있다. 본 실험에서는 레이저 도핑된 선택적 에미터 위에 미세 패턴 Ni/Cu 도금 전극을 형성하였다. 니켈과 동 도금은 무전해 Light induced plating(LIP)으로 진행하였다. 니켈 도금 전극의 접착력 개선과 접촉저항 개선을 위해서 니켈 전극을 질소 분위기에서 열처리하여 니켈실리사이드(NiSi)를 형성하였다. 니켈 도금 두께와 니켈실리사이드 열처리 조건을 최적화하여 충실도 77.4%, 변환효율 18.5%를 달성하였다.

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Contact Resistance Analysis of High-Sheet-Resistance-Emitter Silicon Solar Cells (고면저항 에미터 결정질 실리콘 태양전지의 전면전극 접촉저항 분석)

  • Ahn, Jun-Yong;Cheong, Ju-Hwa;Do, Young-Gu;Kim, Min-Seo;Jeong, Ji-Weon
    • New & Renewable Energy
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    • v.4 no.2
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    • pp.74-80
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    • 2008
  • To improve the blue responses of screen-printed single crystalline silicon solar cells, we investigated an emitter etch-back technique to obtain high emitter sheet resistances, where the defective dead layer on the emitter surface was etched and became thinner as the etch-back time increased, resulting in the monotonous increase of short circuit current and open circuit voltage. We found that an optimal etch-back time should be determined to achieve the maximal performance enhancement because of fill factor decrease due to a series resistance increment mainly affected by contact and lateral resistance in this case. To elucidate the reason for the fill factor decrease, we studied the resistance analysis by potential mapping to determine the contact and the lateral series resistance. As a result, we found that the fill factor decrease was attributed to the relatively fast increase of contact resistance due to the dead layer thinning down with the lowest contact resistivity when the emitter was contacted with screen-printed silver electrode.

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CONTACT RESISTANCE ANALYSIS OF HIGH-SHEET-RESISTANCE-EMITTER SILICON SOLAR CELLS (고면저항 에미터 결정질 실리콘 태양전지의 전면전극 접촉저항 분석)

  • Ahn, Jun-Yong;Cheong, Ju-Hwa;Do, Young-Gu;Kim, Min-Seo;Jeong, Ji-Weon
    • 한국신재생에너지학회:학술대회논문집
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    • 2008.05a
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    • pp.390-393
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    • 2008
  • To improve the blue responses of screen-printed single crystalline silicon solar cells, we investigated an emitter etch-back technique to obtain high emitter sheet resistances, where the defective dead layer on the emitter surface was etched and became thinner as the etch-back time increased, resulting in the monotonous increase of short circuit current and open circuit voltage. We found that an optimal etch-back time should be determined to achieve the maximal performance enhancement because of fill factor decrease due to a series resistance increment mainly affected by contact and lateral resistance in this case. To elucidate the reason for the fill factor decrease, we studied the resistance analysis by potential mapping to determine the contact and the lateral series resistance. As a result, we found that the fill factor decrease was attributed to the relatively fast increase of contact resistance due to the dead layer thinning down with the lowest contact resistivity when the emitter was contacted with screen-printed silver electrode.

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Field Assisted Method of Producing Wide-bandgap Transparent Conductive Electrodes for Deep Ultra-violet Light Emitting Diodes Prepared by Magnetron Sputtering

  • Kim, Seok-Won;Kim, Su-Jin;Kim, Hui-Dong;Kim, Gyeong-Heon;Park, Ju-Hyeon;Lee, Byeong-Ryong;U, Gi-Yeong;Kim, Tae-Geun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.331-331
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    • 2014
  • 3족 질화물에 기반한 발광다이오드는 비소화물이나 인화물에 비해 여러 가지 장점을 가져 각광받아왔다. 특히, (Al)GaN 에 기반한 자외선 영역 발광 다이오드는 자외선 경화, 소독 등의 여러 가지 응용 가능성을 가진다 [1]. 하지만, 심자외선 영역으로 갈수록 높은 접촉 저항과 투명전극에서의 광흡수에 의해 전류주입 효율과 광추출 효율이 감소하여 결국 외부양자 효율이 더욱 열화되는 특성을 보인다. 이는 넓은 밴드갭을 가지는 물질을 이용하여 p-(Al)GaN 층에서 오믹접촉을 이루어야만 해결이 가능하지만 아직까지 이러한 결과가 보고된 바 없다. 본 연구에서는, 우리는 넓은 밴드갭을 가지는 silicon dioxide (SiO2) 에 전기장을 인가하여 p-GaN, and p-AlGaN 층에 전도성 필라멘트를 형성하여 전기전도도를 부여하는 연구를 진행하였다. p-GaN 과 p-AlGaN 위에서 5 nm 두께의 SiO2는 schottky 한 특성과 280 nm의 파장대역에서 약 97%의 투과율을 보였다. 비록 schottky 장벽이 형성되었지만, 전기전도도가 크게 향상되었으며 심자외선 영역에서 매우 낮은 흡수율을 보였다. 이는 기존의 증착후 열처리를 거쳐 제조된 전극에 비하여 우수한 특성을 지니며 향후 심자외선 영역 발광다이오드의 p-(Al)GaN 층 위에 오믹접촉을 이룰수 있는 가능성을 제시한다.

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Roll-type Micro Contact Printing for Fine Patterning of Metal Lines on Large Plastic Substrate (대면적 미세 금속전극 인쇄를 위한 원통형 마이크로 접촉 인쇄공정)

  • Kim, Jun-Hak;Lee, Mi-Young;Song, Chung-Kun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.6
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    • pp.7-14
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    • 2011
  • This paper is related to a roll-type micro-contact printing process. The proper parameters such as coating velocity, inking velocity, printing velocity and printing pressure as well as Ag contents of Ag ink were extracted to perform the fine patterning of Ag electrodes. Additionally we developed a process for PDMS with high uniform thickness. Finally, we obtained the Ag fine electrodes on $4.5cm\;{\times}\;4.5cm$ plastic substrate with the line width of 10 um, thickness less than 300 nm, surface roughness less than 40 nm, and the specific resistance of $2.08\;{\times}\;10^{-5}{\Omega}{\cdot}cm$.

Analysis of Kinetic Parameter Effects on Printing Property in Micro-Contact Printing of Ag Ink (Ag 잉크의 미세접촉인쇄에 있어서 동역학적 파라미터가 인쇄특성에 미치는 영향 분석)

  • Park, Sung-Ryool;Song, Chung-Kun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.2
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    • pp.7-14
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    • 2010
  • This paper describes the effects of kinetic parameters such as attaching speed, attaching time, and dettaching speed on printing property of electrodes which were fabricated by micro-contact printing with Ag ink. In inking process the attaching speed was preferable to be less than 1 mm/s, attaching time as short as possible, and detaching speed larger than 1000 mm/s in order to obtain the transfer ratio of ink larger than 98%. Meanwhile in printing process the parameters were totally opposite to the results of inking process; attaching speed larger than 100 mm/s, attaching time larger than 30 sec, and detaching speed less than 1 mm/s for the best results. With the parameters we could obtain the micro-contact printed electrodes with the minimum line width of $30\;{\mu}m$, thickness of 300~500 nm, roughness less than 50 nm, and resistivity of about $15{\sim}16{\mu\Omega\cdot}cm$.