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Chang, Gee-Keun;Yoon, Jin-Mo;Jeong, Jin-Cheol;Kim, Min-Young
- Korean Journal of Materials Research
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- v.10 no.2
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- pp.124-127
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- 2000
A new triode type Ti-silicided Si FEA(field emitter array) was realized by Ti-silicidation of Ti coated Si FEA and its field emission properties were investigated. In the fabricated device, the field emission properties through the unit pixel with $200{\mu\textrm{m}}{\times}200{$\mu\textrm{m}}$ tip array in the area of $1000{\mu\textrm{m}}{\times}1000{$\mu\textrm{m}}$ were as follows : the turn-on voltage was about 70V under high vacuum condition of $10^8Torr$, and the field emission current and steady state current degradation were about 2nA/tip and 0.3%/min under the bias of $V_A=500V\;and\;V_G=150V$. The low turn-on voltage and the high current stability during long term operation of the Ti silicided Si FEA were due to the thermal and chemical stability and the low work function of silicide layer formed at the surface of Si tip.
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제병길;배성찬;최시영
- Proceedings of the IEEK Conference
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- 2003.07b
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- pp.722-726
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- 2003
본 논문에서는 Porous poly-silicon cold cathode에 의해 전자를 방출하는 Ballistic electron surface-emitting display(BSD)의 전계방출 특성을 실험했다. BSD는 nanocrystalline을 둘러싼 산화막을 multi-tunneling한 전자에 의해 발광이 되는 mechanism이기 때문에 산화막의 두께를 변수로 두어 특성을 실험했다. 900℃에서 1시간에서 3시간까지 30분 간격으로산화 반응을 진행하였으며, leakage current와 emission current의 비로 효율을 나타내었을 때 1시간 30분 동안 산화 반응을 한 시료가 가장 좋은 특성을 나타내었다.
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