• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.128-128
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• 1997

• Proceedings of the Korean Vacuum Society Conference
• /
• 1997.02a
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• pp.73-73
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• 1997

• Proceedings of the Korean Vacuum Society Conference
• /
• 1996.02a
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• pp.85-86
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• 1996

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.02a
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• pp.86-86
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.83-83
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1997.05a
• /
• pp.99-99
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• 1997

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1997.05a
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• pp.100-100
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• 1997

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.2
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• pp.101-105
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• 2010

We fabricated FEDs(Filed emission devices) based on ZnO nanowires. The ZnO nanowires were synthesized on Au thin films by hydrothermal method at the temperature of 90[$^{\circ}C$] on hot plate. In order to form tips of the ZnO nanowire, SDS(Sodium Dodecyl Sulfate) was mixed in O.05-0.3[wt%] solution as capping material. After 2 hour growth, we obtained nanowires of chain form The high-purity nanowires showed sharp tip geometry with a wurtzite structure. The field emission properties of the ZnO nanowires were investigated in high vacuum chamber. The turn-on field for the ZnO nanowires was found to be about 4.1[V/${\mu}m$] at a current density of 0.1[${\mu}A/cm^2$].

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.124-127
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• 2000

A new triode type Ti-silicided Si FEA(field emitter array) was realized by Ti-silicidation of Ti coated Si FEA and its field emission properties were investigated. In the fabricated device, the field emission properties through the unit pixel with $200{\mu\textrm{m}}{\times}200{$\mu\textrm{m}}$ tip array in the area of $1000{\mu\textrm{m}}{\times}1000{$\mu\textrm{m}}$ were as follows : the turn-on voltage was about 70V under high vacuum condition of $10^8Torr$, and the field emission current and steady state current degradation were about 2nA/tip and 0.3%/min under the bias of $V_A=500V\;and\;V_G=150V$. The low turn-on voltage and the high current stability during long term operation of the Ti silicided Si FEA were due to the thermal and chemical stability and the low work function of silicide layer formed at the surface of Si tip.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.114-121
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• 2001

A circuit model for active-controlled field emitter array(ACFEA) as an electron source of active-controlled field emission display(ACFED) has been proposed. The ACFEA with hydrogenated amorphous silicon thin-film transistor(a-Si:H TFT) and Spindt-type molibdenum tips (Spindt-Mo FEA) has been fabricated monolithically on the same glass. A-Si:H TFT is used as a control device of field emitters, resulting in stabilizing emission current and lowering driving voltage. The basic model parameters extracted from the electrical characteristics of the fabricated a-Si:H TFT and Spindt-Mo FEA were implemented into the ACFEA model with a circuit simulator SPICE. The accuracy of the equivalent circuit model was verified by comparing the simulated results with the measured one through DC analysis of the ACFEA. The transient analysis of the ACFEA showed that the gate capacitance of FEA along with the drivability of TFT strongly affected the response time. With the fabricated ACFEA, we obtained a response time of 15$mutextrm{s}$, which was enough to make 4bit/color gray scale with the pulse width modulation (PWM).