• Proceedings of the Korean Vacuum Society Conference
• /
• 1997.02a
• /
• pp.128-128
• /
• 1997

• Proceedings of the Korean Vacuum Society Conference
• /
• 1996.02a
• /
• pp.47-48
• /
• 1996

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.02a
• /
• pp.86-86
• /
• 1999

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.02a
• /
• pp.89-89
• /
• 1999

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.02a
• /
• pp.33-33
• /
• 1999

• Electrical & Electronic Materials
• /
• v.13 no.5
• /
• pp.44-48
• /
• 2000

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1996.05a
• /
• pp.83-83
• /
• 1996

• Information Display
• /
• v.17 no.4
• /
• pp.3-12
• /
• 2016

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1997.05a
• /
• pp.100-100
• /
• 1997

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.24 no.2
• /
• pp.101-105
• /
• 2010

We fabricated FEDs(Filed emission devices) based on ZnO nanowires. The ZnO nanowires were synthesized on Au thin films by hydrothermal method at the temperature of 90[$^{\circ}C$] on hot plate. In order to form tips of the ZnO nanowire, SDS(Sodium Dodecyl Sulfate) was mixed in O.05-0.3[wt%] solution as capping material. After 2 hour growth, we obtained nanowires of chain form The high-purity nanowires showed sharp tip geometry with a wurtzite structure. The field emission properties of the ZnO nanowires were investigated in high vacuum chamber. The turn-on field for the ZnO nanowires was found to be about 4.1[V/${\mu}m$] at a current density of 0.1[${\mu}A/cm^2$].