• Proceedings of the Korean Vacuum Society Conference
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• 2005.02a
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• pp.116-116
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 1997.07a
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• pp.124-124
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• 1997

• Proceedings of the Korean Vacuum Society Conference
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• 1997.07a
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• pp.125-125
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• 1997

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.142-142
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• 2002

• Applied Microscopy
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• v.25 no.3
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• pp.75-81
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• 1995

The microstructural characterization of ternary $ZnS_{x}Se_{1-x}$(x=0.085) on GaAs(001) substrate grown up to $2{\mu}m\;at\;300^{\circ}C$ by molecular beam epitaxy(MBE) which has a single growth chamber was investigated by high resolution transmission electron microscope (HRTEM) working at 300 kV with point resolution of 0.18nm. The interface in the ZnSSe/GaAs specimen maintains a pseudomorphism with the substrate, but the epilayer has high density of stacking faults and moire fringes. The pits which had formed along <111> direction were found at the interface of ZnSSe/GaAs. The pits were responsible for producing defects in both epilayer and substrate. The wavy interface which has the difference of 15nm in height was found to maintain the pseudomorphism with the substrate and no stacking faults were found around the interface. However there exists faint and fine moire fringes in the epilayer near interface.

• Applied Microscopy
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• v.25 no.3
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• pp.82-89
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• 1995

High resolution transmission electron microscopic observations on quaternary $Zn_{1-x}Mg_{x}S_y$ $S_{1-y}$(x=0.13, y=0.16) on (001) GaAs substrate grown up to $1.2{\mu}m$ with 20nm ZnSe buffer layer at $300^{\circ}C$ by RIBER MBE system which has a single growth chamber were investigated by HRTEM working at 300kV with point resolution of 0.18nm. The ZnSe buffer layer maintains the coherency with the GaAs substrate. The stacking faults had begun at ZnSe buffer/$Zn_{1-x}Mg_{x}S_{y}S_{1-y}$ interface, whose length and spacing became larger than 60nm and wider than 40nm, respectively. The inverse triangular stacking fault was bounded by stacking faults which were formed on {111} planes with different variants. There exists rare stacking faults inside the triangular defect. The epilayer surrounded by the straight stacking faults, which had formed in the same direction, became the columnar structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.357-357
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• 2008

Spin injection experiment is conducted in epitaxially grown Fe/GaAs hybrid structure. For the formation of Schottky tunnel barrier between Fe and GaAs layers, highly n-doped GaAs layers are grown after n-doped channel layer. A non-local measurement, a voltage measurement probes do not contain a charge current path, is used for detecting only the chemical potential differences by the spin transport. As a result, the dips that are nicely matched with antiparallel region are obtained.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.6
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• pp.288-293
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• 2023

To optimize the process parameters of laser powder bed fusion process to fabricate the high density STS316L alloy, the effect of laser power, scanning speed and hatching distance on the relative density was studied. Tensile properties of additively manufactured STS316L alloy using optimized parameters was also evaluated according to the build direction. As a result of additive manufacturing process under the energy density of 55.6 J/mm³, 83.3 J/mm³ and 111.1 J/mm³, high density STS316L specimens was suitably fabricated when the energy density, power and scan speed were 83.3 J/mm³, 225 W and 1000 mm/s, respectively. The yield strength, ultimate tensile strength, and elongation of STS316L specimens in direction perpendicular to the build direction, show the most competitive values. Anisotropic shape of the pores and the lack of fusion defects probably caused strain localization which result in deterioration of tensile properties.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.473-474
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• 2012

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.96-101
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• 2001

In this study, diluted magnetic $Zn_{1-x}Mn_{x}Te$ epilayers were grown on GaAs(100) substrates by hot-wall epitaxy, and their characteristics were systematically examined. The maximum Mn composition of the $Zn_{1-x}Mn_{x}Te$ epilayers was 0.97. The crystallographic orientation was toward <100> and the structure of the $Zn_{1-x}Mn_{x}Te$ epilayers was the zincblende structure, identical to those of the GaAs substrate. With increasing the substrate temperature (350~$400^{\circ}C$), Mn composition increased (0.02~0.23) and he quality of the epilayer became worse. The lattice constants increased linearly with increasing Mn composition, but the band gap energy increased nonlinearly with increasing x.