• Journal of Aerospace System Engineering
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• v.1 no.1
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• pp.25-35
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• 2007

In this paper, the interlaminar crack problems of a fiber metal laminate (FML) under generalized plane deformation are studied using the theory of anisotropic elasticity. The crack is considered to be embedded in the matrix interlaminar region (including adhesive zone and resin rich zone) of the FML. Based on Fourier integral transformation and the stress matrix formulation, the current mixed boundary value problem is reduced to solving a system of Cauchy-type singular integral equations of the 1st kind. Within the theory of linear fracture mechanics, the stress intensity factors are defined on terms of the solutions of integral equations and numerical results are obtained for in-plane normal (mode I) crack surface loading. The effects of location and length of crack in the 3/2 and 2/1 ARALL, GLARE or CARE type FML's on the stress intensity factors are illustrated.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.258-262
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• 1996

We have investigated the changes in magnetoresistive characteristics, interfacial roughness, and preferred orientation with the Fe buffer layer thickness, annealing temperature, and the stacking number of layers variation in Fe/[NiFe/Cu] multilayers by using the 3-gun d.c. magnetron sputtering method. Intensity of the (200) orientation was increased with the increment of the Fe-buffer layer thickness. We found a maximum magnetoresistance ration of 4.7%, when the buffer layer thickness was 70$\AA$, and the field sensitivity also showed a maximum value at the same thickness. We varied the stacking number of multilayers with fixing the Fe buffer layer thickness of 70$\AA$. When the stacking number was 40 layers, maximum MR ratio(5.3%) was observed. With the variation of annealing temperature no change in the MR ratio was found beyond $300^{\circ}C$. But decrement of MR ratio was observed above $300^{\circ}C$. This decrement of the MR ratio was responsible for the increment of paramagnetic mixed layer caused by the diffusion of Cu layer and the change of antiferromagnetic coupling.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.7
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• pp.7-15
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• 2020

Recently, the fourth industrial revolution has been presented as a new paradigm and additive manufacturing (AM) has become one of the most important topics. For this reason, process monitoring for each cross-sectional layer of additive metal manufacturing is important. Particularly, deep learning can train a machine to analyze, optimize, and repair defects. In this paper, image classification is proposed by learning images of defects in the metal cross sections using the convolution neural network (CNN) image labeling algorithm. Defects were classified into three categories: crack, porosity, and hole. To overcome a lack-of-data problem, the amount of learning data was augmented using a data augmentation algorithm. This augmentation algorithm can transform an image to 180 images, increasing the learning accuracy. The number of training and validation images was 25,920 (80 %) and 6,480 (20 %), respectively. An optimized case with a combination of fully connected layers, an optimizer, and a loss function, showed that the model accuracy was 99.7 % and had a success rate of 97.8 % for 180 test images. In conclusion, image labeling was successfully performed and it is expected to be applied to automated AM process inspection and repair systems in the future.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.278-282
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• 2001

The recombination motion of Partial dislocations on basal slip (0001) 1/3<1120> in sapphire ($\alpha$-Al$_2$$O_3$) single crystals was investigated using the four-point bending test with the prism plane (1120) samples. These bending experiments were carried but in the temperature range from $1200^{\circ}C$ to $1400^{\circ}C$ at various engineering stresses 90MPa, 120MPa, and 150MPa. During these tests it was shown that an incubation time was needed for basal slip to be activated. The activation energy for the incubation time was 5.6-6.0eV in the temperature range from $1200^{\circ}C$ to $1400^{\circ}C$. The incubation time is believed to be related to recombination of climb dissociated partial dislocations via self-climb. In addition, these activation energies are nearly same as those for oxygen self-diffusion in $Al_2$$O_3$ (approximately 6.3 eV). Thus, the recombination of the two partial dislocations would be possibly controlled by oxygen diffusion on the stacking fault between the partials.

• Transactions of Materials Processing
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• v.27 no.1
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• pp.5-11
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• 2018

Direct energy deposition (DED) technique uses a laser heat source to deposit a metal layer on a substrate. Many researchers have used the DED technique to study the hardfacing of molds and dies. The aim of this study is to obtain high surface hardness and a sound bonding between the AISI M4 deposits and a substrate utilizing a mixed powder that contains M4 and AISI P21 powders. To prevent interfacial cracks between the M4 deposits and the substrate, the mixed powder is pre-deposited onto a JIS S45C substrate, before the deposition of M4 powders. Interfacial defects occurring between the deposits and substrate and changes in the microhardness of the intermediate layer were examined. Observations of the cross-sections of deposited specimens revealed that the interfacial cracks appeared in samples with one and two mixed layers regardless of the mixture ratio. However, the crack was removed by increasing the mixture ratio and the number of intermediate layers. Meanwhile, the microhardness in the mixed layer was found to decrease with increasing ratio of P21 powder in the mixture and that in the upper region of the deposited layers was approximately 800 HV, which was attributed to various alloying elements in the M4 powder.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.895-905
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• 1994

The solid phase crystallization behavior of undoped amorphous $Si_{1-x}Ge_{x}$ (X=O to 0.53) alloyfilms was studied by X-ray diffractometry(XRD) and transmission electron microscopy(TEM). Thefilms were deposited on thermally oxidized 5" (100) Si wafer by MBE(Mo1ecular Beam Epitaxy) at 300'C and annealed in the temperature range of $500^{\circ}C$ ~ $625^{\circ}C$. From XRD results, it was found that the thermal budget for full crystallization of the film is significantly reduced as the Ge concentration in thefilm is increased. In addition, the results also shows that pure amorphous Si film crystallizes with astrong (111) texture while the $Si_{1-x}Ge_{x}$ alloy film crystallzes with a (311) texture suggesting that the solidphase crystallization mechanism is changed by the incorporation of Ge. TEM analysis of the crystallized filmshow that the grain morphology of the pure Si is an elliptical and/or a dendrite shape with high density ofcrystalline defects in the grains while that of the $Si_{0.47}Ge_{0.53}$ alloy is more or less equiaxed shape with muchlower density of defects. From these results, we conclude that the crystallization mechanism changes fromtwin-assisted growth mode to random growth mode as the Ge cocentration is increased.ocentration is increased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.145-150
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• 2014

GaN nanorods were grown on the apex of GaN stripes by three dimensional selective growth method. $SiO_2$ mask was partially removed only on the apex area of the GaN stripes by an optimized photolithography for the selective growth. Metallic Au was deposited only on the apex of the GaN stripes and a selective growth of GaN nanorods was followed by a metal organic vapor phase epitaxy (MOVPE). We confirmed that the shape and size of the GaN nanorods depend on growth temperature and flow rates of group III precursor. GaN nanorods were grown having a taper shape which have sharp tip and triangle-shaped cross section. From the TEM result, we confirmed that threading dislocations were rarely observed in GaN nanorods because of the very small contact area for the selective growth. Stacking faults which might be originated from a difference of the crystal facet directions between the GaN stripe and the GaN nanorods were observed in the center area of the GaN nanorods.

• Journal of the Korean Ceramic Society
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• v.13 no.3
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• pp.55-62
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• 1976

순수한 닉켈과 금 박막을 (III)규소 단 결정위에 진공 증착시켰다. Ni/Au/Si나 Au/Ni/Si시료를 진공중에서 약 55$0^{\circ}C$로 가열하였을 때 육방정 혹은 변형된 육방정의 미소 결정들이 규소 기질위에 형성되었다. 이들 미소 결정들의 형성과정 및 조성은 X-선 회절법, scanning electron microscopy 및 scanning Auger microprobe 법을 사용하여 결정하였다. 이들 미소 결정은 NiSi2임이 확인되었다. Ni/Au/Si 시료에서는 Au-Si 공융점(37$0^{\circ}C$) 이상으로 온도가 증가됨에 따라 닉켈과 규소가 Au-Si 공융체 속으로 이동한 후 반응하여 NiSi2를 형성하였다. Au/Ni/Si 시료에 있어서의 Au-Si 공융체 형성은 닉켈 박막에 있는 바늘구멍형의 표면 결함과 관련 지을 수 있겠다. 금이 닉켈 박막의 grain boundary를 통하여 Ni/Si 계면으로 확산되어 그 계면을 습윤시킨 다음 Au-Si 공융체를 형성하였다. 이런 Au-Si 공용체는 닉켈과 규소 원자에 대한 높은 확산 매질로서 작용하여 NiSi2 형성을 촉진시켰다. 표면에 평행한 (III)규소면 위의 NiSi2 미소 결정은 유사한 육방정으로 나타났으며, 경사진 미소결정은 부등변 사변형과 유사하였다. Auger 스펙트럼 및 Ni, Au 및 Si에 대한 내층조성(indepth Composition Profiles)은 NiSi2 미소 결정이 Au-Si 공융체의 matrix에 미소 부분으로 나타났음을 보여주었다.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.381-388
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• 2003

The material deficiencies in the form of pre-existing defects can initiated cracks and fractures. The stress distribution and fatigue crack initiation life of engineering materials may be associated with the size, the shape and the relative location of defects contained in the component. The objective of this study is to investigate the effect of arbitrarily located hole defect around the rivet hole of a wing section in monolithic aluminum and Al/GFRP laminates under cyclic bending moment during a service load. The stress distribution and the fatigue crack initiation behavior near a rivet hole of on the relationships between stress concentration factor ($K_t$) and relative position of defects were considered. The test results indicated the features of different stress field. Therefore, the stress concentration factor ($K_t$) and the fatigue crack initiation behavior was illustrated different behavior according to each position of hole defect around the rivet hole in monolithic aluminum and Al/GFRP laminates.

• Journal of Ocean Engineering and Technology
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• v.22 no.6
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• pp.46-51
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• 2008

The effect of the addition of Co and N and subzero treatment on tensile strength and damping capacity was investigated in Fe-Cr-Mn alloy. Austenite was transformed into martensite by cold rollins increasing the degree of cold rollins led to an increase in the volume fraction of martensite. The damping capacity linearly increased with increasing volume fraction of ${\varepsilon}$ martensite in cold rolled specimens and subzero treated specimens after cold rolling. The volume fraction of ${\varepsilon}$ martensite, tensile strength and damping capacity was also increased by the addition of Co, while this treatment decreased the elongation. However, the volume fraction of ${\varepsilon}$ martensite, elongation and damping capacity were reduced by the addition of N, although the tensile strength increased. Tensile strength and damping capacity werealso increased by subzero treatment, while elongation decreased.