• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.525-528
• /
• 1997

In this study, Eu(TTA)$_3$(phen) was synthesized and its films were prepared by vapor deposition method. Its films were characterized by UV-Vis absorption spectroscopy, Atomic Force Microscopy(AFM) and Photoluminescence(PL) measurements. Their electroluminescent(EL) characteristics were investigated by PL measurements, where a cell structure of glass substrate/ITO/Eu(TTA)$_3$(phen)/Al was employed. It was found that its films were well prepared without any decomposition and the film thickness could be controlled by adjusting the amount of Eu(TTA)$_3$(phen) in a boat. The EL spectrum of these films was almost the same as that of PL spectrum of these films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.1034-1037
• /
• 2002

In this study, we fabricated red organic electrolu-minescent device with a doping material (DCJTB), and The cell structure used ITO:indium tin oxide $[20{\Omega}]$/CuPc:Hole injection layer 20nm/NPB: Hole transfer layer 40nm/$Alq_3$ (host) + DCJTB(1% or 3%) (guest) Emitting layer 40nm/$Alq_3$ : Electron transfer layer 30nm/Al :Cathode layer 150nm. the luminescent layer consisted of a host material. 8-hydrozyquinoline aluminum $(Alq_3)$, and DCJTB dye as the dopant. a stable red emission (chromaticity coordinates : x=0.64, y=0.36) was obtained in this cell with the luminance range of $100-600cd/m^2$. we study the electrical and optical properties of devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.351-352
• /
• 2008

A new high efficient red PhOLED using a host of $Bebq_2$ and double dopants of $(pq)_2$Ir(acac) and SEC-R411 have been fabricated and evaluated. The device doubly doped with $(pq)_2$Ir(acac) and SFC-R411 showed the current efficiency improvement of 22% under a luminance of 10000 cd/$m^2$ in comparision with the device singly doped with SFC-R411. The luminance, current efficiency and central wavelength of the doubly doped device were 9300 cd/$m^2$ at 7V, 11.1 cd/A under a luminance of 10000 cd/$m^2$ and 625 nm, respectively.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1466-1468
• /
• 2001

For the full color organic electro-luminescent device, essentially, red, green, and blue emissions are required. But red emission is not to reach minimum level of practical use 31[lm/W]. In order to optimize color purity and power consumption requirements, it is important for the materials development efforts to search for improvements in red emission effisiency. In this study, the bis(8-oxyquinolino)zinc II ($Znq_2$) were synthesized successfully from zinc chloride($ZnCl_2$) as a initial material. Then, we fabricated red organic electroluminescent device with a dye(DCJTB)-doped and inserted $Znq_2$ between emission layer and cathode layer for increasing EL efficiency. The hole transfer layer is a N,N'-diphenyl-N,N'-bis-(3-methyl phenyl) -1,1'-diphenyl-4.4'-diamine(TPD), and the host material of emission layer is $Znq_2$. For the inserting of $Znq_2$, efficiency increased.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.209.1-209.1
• /
• 2013

GaP는 가시광선 발광다이오드을 얻을 수 있는 적절한 재료중의 하나로 해당영역의 파장에 대하여 높은 양자효율을 얻을 수 있고, 깊은 준위 재결합이 없기 때문에 GaP 녹색 및 As 첨가한 GaAsP 적색 LED 에 적용할 수 있습니다. 또한, 상온에서 2.2 eV 에 해당하는 넓은 에너지 밴드갭을 가지고 있으므로, 소음이 없는 자외선 검출기에도 적합합니다. 이 물질에 대한 소자들은 기존에 GaP 기판을 사용하였습니다. 최근, GaP 와 격자상수가 비슷한 Si 기판을 활용하여 그 위에 성장하는 방법에 대한 관심이 많아졌습니다. Si는 물리적 및 화학적으로 안정하고 딱딱한 소재이며 대면적 기판을 쉽게 얻을 수 있어 전자 기기 및 대규모 집적 회로의 좋은 소재입니다. Si 와 대조적으로 GaP은 깨지기 쉬운 재료이며 GaP 기판은 Si와 같은 대면적 기판을 얻을 수 없습니다. 이러한 문제의 한 가지 해결책은 Si 기판위에 GaP 층의 성장입니다. GaP 과 Si의 조합은 현재의 광전소자 들에 더하여 더 많은 응용프로그램들을 가능하게 할 것입니다. 그러나, Si 기판위에 GaP 성장 시 삼차원적 성장 및 역위상 경계면과 같은 문제점들이 발생하므로 질이 높고 균일한 결정의 GaP 를 얻기가 어렵습니다. 따라서, Si 에 GaP 의 성장시 초기 단계를 제어하는 성장 기술이 필요합니다. 본 연구에서는, 유기금속화학증착법을 이용하여 Si 기판위에 양질의 GaP를 얻을 수 있는 최적의 성장조건을 얻고자 합니다. 실험 조건은 Si에 GaP의 에피택셜 성장의 초기 단계에 영향을 주는 V/III 비율, 성장압력, 기판방향 등을 가변하는 조건으로 진행하였습니다. V/III 비율은 100~6400, 성장 압력은 76~380 Torr로 진행하였고, Si 기판은 just(001)과 2~6도 기울어진 (001) 기판을 사용하였습니다.

• Journal of the Korean Vacuum Society
• /
• v.19 no.3
• /
• pp.184-189
• /
• 2010

Organic light-emitting diodes (OLEDs) with single emissive layer structures using two fluorescent dopants were fabricated and the device was composed of ITO / NPB ($700{\AA}$) / MADN : C545T - 1.0% : DCJTB - 0.3% ($300{\AA}$) / Bphen ($300{\AA}$) / LiF ($10{\AA}$) /Al ($1,000{\AA}$). C545T and DCJTB were functioned as green fluorescent dye and red fluorescent dye under MADN as host material. Concentrations of C545T and DCJTB was changed in emissive layer of MADN. Optimized OLED device using two fluorescence dopants shows emission efficiency of 8.42 cd/A and luminescence of 3169 cd/$m^2$at 6 V with CIE color coordinate, (0.43, 0.50). Electroluminescence of optimized OLED showed two peak at 500 and 564 nm according to C545T and DCJTB. These results indicate that F$\ddot{o}$ster energy transfer energy transfer was from MADN to C545T and rather than to DCJTB continuously.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.939-942
• /
• 2001

We fabricated Red Organic light-emitting devices(OLED). The Basic Device Structure is ITO/hole transfer layer, TPD(50nm)/red emitting layer, Alq3 doped with DCM2 or DCM2:rubrene(xnm)/electorn transfer layer, Alq3(50-xnm)/LiF(0.8nm)/Al(8nm) . The thickness of emitting layer(xnm) changed 5, 10, 20nm. we demonstrate red emitting OLED with dependent on the thickness and concentrators of Alq3 layer doped with DCM2 or co-doped with DCM2:ruberene. The Emission color and Brightness are changed with doping or co-doping condition, dopant concentarton. In the case of rubrene:DCM2 co-doped layer structure, the red color Purity and device efficiency is improved. The CIE index of rubrene co-doped OLED is x=0.67, y=0.31. By co-doping the Alq3 layer with DCM2, rubrene, EL efficiency improved from 0.38cd/A to 0.44cd/A in comparison whit DCM2 doped Alq3 layer.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.59 no.5
• /
• pp.918-921
• /
• 2010

We have proposed an dielectric layer to improve the luminance of red organic light emitting device. Here, we have calculated refractive index of dielectric layer material that was revised refractive index of organic material, ITO and glass. Refractive index of dielectric layer material was 1.711. The structure of dielectric layer was designed in organic material/ITO/dielectric layer/glass. Dielectric material changed thickness that deposited by ion-assisted deposition system. Transmittances of ITO were 95.66-98.85 [%]. Red OLED was fabricated with the structure of TPD($400[{\AA}]$)/DCMII($20[{\AA}]$), Rubrene($20[{\AA}]$)/Alq3($500[{\AA}]$)/LiF($15[{\AA}]$)/Al($1,000[{\AA}]$). Turn-on voltage and Luminance of Red OLED were 10 [V] and 5,857 cd/m2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.64-65
• /
• 2007

High-efficiency white organic light-emitting diodes (WOLEDs) were fabricated with two emissive layers and exciton blocking layer was sandwiched between two phosphorescent dyes which were, bis(3,5-Difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (Flrpic) as blue emission and a newly synthesized red phosphorescent material guest, Bis(5-benzoyl-2-phenylpyridinato-C,N)iridium(III) (acetylacetonate) ((Bzppy)2Ir(III)acac). This exciton blocking layer prevents a triple-triple energy transfer between the two phosphorescent emissive layers with balanced emission of blue and red. The white device showed the Commission Internationale d'Eclairage (CIEx,y) coordinates of (0.34, 0.40) at the maximum luminance of $24100\;cd/m^2$ and maximum luminous efficiency of 22.4 cd/A, respectively.

• Polymer(Korea)
• /
• v.25 no.3
• /
• pp.399-405
• /
• 2001

Poly[3-octylthiophene-co-3-(4-fluorophenyl)thiophene]s were synthesized in 2:1, 1:1, and 1:2 mole ratios, and organic electroluminescent devices were fabricated using the copolymers. The opto-electrical properties of the copolymers were studied by PL, EL spectra, I-V, and V-L curves of the organic electroluminescent devices in conjunction with the energy band diagrams which were obtained from the cyclic voltammogram and the electronic absorption spectra. The LUMO energy level of P(OT/FPT)(1:1) is the lowest as -3.35 eV. In the copolymers P(OT/FPT)(2:1) and P(OT/FPT)(1:1) the ${\lambada}_{max}$ in the PL and EL spectra red-shifted as the mole ratio of fluorophenyl group increased while in P(OT/FPT)(1:2) it showed a blue-shift. This indicates that the backbone chain is twisted due to the steric hinderance of the fluorophenyl group leading to shorter ${\pi}$-conjugation length. P(OT/FPT)(1:1) showed the highest EL intensity and the highest power efficiency among the three copolymers. In P(OT/FPT)(1:2) the roughness of the film surface causes unusually high local leakage current leading to the low efficiency of electroluminescence.