• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.335-336
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• 2009

저가격 고효율 실리콘 태양전지를 구현하기 위하여 핵심적으로 적용되는 공정인 SOD(Spin on Doping) 확산공정 최적화에 관하여 연구하였다. n-type 도핑 물질로는 인(P509)을 사용하였으며, Spinning 속도와 Spinning 시간을 각 3000 rpm, 30 초로 고정하고 급속 열처리로에서 확산 온도와 확산 시간을 $800\;^{\circ}C\;{\sim}\;950\;^{\circ}C$, 2 분에서 20 분까지 가변하며 확산공정을 실시하였다. 4-Point Probe 장비로 에미터 표면 저항을 측정한 결과 확산 온도 $850\;^{\circ}C$에서 5분간 열처리 하여 확산 공정을 하였을 때 저가의 고효율 실리콘 태양전지를 구현하는데 적용 하기위한 $30\;{\sim}\;50\;{\Omega}$-sq의 에미터 표면 저항을 만족 시키는 $36\;{\Omega}$-sq의 값을 얻을 수 있었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2004.05a
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• pp.24-24
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• 2004

• 한국태양에너지학회:학술대회논문집
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• 2009.04a
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• pp.235-240
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• 2009

Crystlline silicon solar cells markets are increasing at rapid pace. now, crystlline silicon solar cells markets screen-printing solar cell is occupying. screen-printing solar cells manufacturing process are very quick, there is a strong point which is a low cost. but silicon and metal contact, uses Ag & Al pates. because of, high contact resistance, high series resistance and sintering inside process the electric conductivity decreases with 1/3. and In pastes ingredients uses Ag where $80{\sim}90%$ is metal of high cost. because of low cost solar cells descriptions is difficult. therefore BCSC(Buried Contact Solar Cell) is developed. and uses light-induced plating, ln-line galvanization developed equipments. Ni/Cu matel contact solar cells researches. in Germany Fraunhofer ISE. In order to manufacture high-efficiency solar cells, metal selections are important. metal materials get in metal resistance does small, to be electric conductivity does highly. efficiency must raise an increase with rise of the curve factor where the contact resistance of the silicon substrate and is caused by few with decrement of series resistance. Ni metal materials the price is cheap, Ti comes similar resistance. Cu and Ag has the electric conductivity which is similar. and Cu price is cheap. In this paper, Ni/Cu/Ag metal contact cell with screen printing manufactured, silicon metal contact comparison and analysis.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.55-60
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• 2012

In order to develop electroless-plated Nickel Phosphate (Ni-P) as a contact material for high efficient low-cost silicon solar cells, we evaluated the effect of ambient thermal annealing on the degradation behavior of interfacial adhesion energy between electroless-plated Ni-P and silicon solar cell wafers by applying 4-point bending test method. Measured interfacial adhesion energies decreased from 14.83 to 10.83 J/$m^2$ after annealing at 300 and $600^{\circ}C$, respectively. The X-ray photoelectron spectroscopy analysis suggested that the bonding interface was degraded by environmental residual oxygen, in which the oxidation inhibit the stable formation of Ni silicide phase between electroless-plated Ni-P and silicon interface.