• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.48-55
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• 2024

The changes in threshold voltage and DIBL were investigated for changes in remanent polarization P_r and coercive field E_c, which determine the characteristics of the P-E hysteresis curve of ferroelectric in NCFET (negative capacitance FET). The threshold voltage and DIBL (drain-induced barrier lowering) were observed for a junctionless double gate MOSFET using a gate oxide structure of MFMIS (metal-ferroelectric-metal-insulator-semiconductor). To obtain the threshold voltage, series-type potential distribution and second derivative method were used. As a result, it can be seen that the threshold voltage increases when P_r decreases and E_c increases, and the threshold voltage is also maintained constant when the P_r/E_c is constant. However, as the drain voltage increases, the threshold voltage changes significantly according to P_r/E_c, so the DIBL greatly changes for P_r/E_c. In other words, when P_r/E_c=15 pF/cm, DIBL showed a negative value regardless of the channel length under the conditions of ferroelectric thickness of 10 nm and SiO₂ thickness of 1 nm. The DIBL value was in the negative or positive range for the channel length when the P_r/E_c is 25 pF/cm or more under the same conditions, so the condition of DIBL=0 could be obtained. As such, the optimal condition to reduce short channel effects can be obtained since the threshold voltage and DIBL can be adjusted according to the device dimension of NCFET and the P_r and E_c of ferroelectric.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.325-330
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• 2004

Recently, the request for the high strength of material is more and more increased in the area of industrial environment and machinery. To accomplish the high strength of materials, carbonizing treatment, nitrifying treatment, shot-peening method are representatively applied, however, shot-peening method is generally used among the surface processes. Shot peening is a cold working process used to impact Compressive residual stressed in the exposed surface layers. Benefits due to shot peening are increase in resistance to fatigue, stress corrosion cracking, fretting, galling, erosion and closing of pores. In this study, the influence of shot peening on the corrosion was investigated on spring steel immersed in 3.5% NaCl. The immersion test as performed on the two kinds of specimens. Corrsion potential, polarization curve, residual stress and etc, were investigated from experiment results. From test result the effect of shot peening on the corrosion was evaluated. The important results of the experimental study on the effects of shot peened on the environment corrosion of spring steels are as follows; In case of corrosion potential, shot peened specimen shows more activated negative direction as compared with parent mental. Surface of specimen, which is treated with the shot peened is placed as more activated state against inner base metal. It can cause t도 anti-corrosion effect on the base metal.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.53-53
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• 2003

최근 높은 유전상수와 잔류 분극, 비선형 등의 다양한 유전적인 특성으로 인해 산화물 박막이 많은 관심을 가지고 연구되어지고 있다. 많은 산화물 박막중에서도 BaTiO3/SiTiO3 (BTO/STO) 인 공격자는 STO나 BTO 또는 (Ba$_{0.5}$ Sr$_{0.5}$)TiO$_3$ (BST)등의 고용체들과 비교했을 때 아주 뛰어난 유전적인 성질을 나타내고 있다. 특히 1000 $\AA$ 이하의 낮은 두께에서도 높은 유전상수와 비선형도를 가진다는 사실이 선행된 실험에서 밝혀졌는데 BTO와 STO를 각각 2 unit cell (8 $\AA$)로 고정 시킨 후 다층 박막으로 제작했을 때 가장 큰 유전 특성을 얻을 수 있었다. 이런 뛰어난 유전적인 성질은 BTO와 STO 각 층의 두께와 주기 변화에 따른 박막 내부의 인위적인 stress와 그에 따른 격자 변형과 아주 밀접한 관계가 있음으로 생각되어진다. 따라서 이런 두 계면에서의 stress와 격자 변형을 더욱 정착하게 분석하기 위해서는 각 층을 원자 단위로 정확하게 두께 제어를 하고 증착되어지는 과정중에서의 growth mode를 확인하는 것이 무엇보다 중요한 일이다.

• Proceedings of the KAIS Fall Conference
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• 2001.05a
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• pp.220-223
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• 2001

Pb가 10% 과잉되고 Zr : Ti = 52 : 48 조성을 갖는 PZT sol이 Pt(3500Å)/Ti(400Å)/SiO₂(3000Å)Si(525㎛)기판 위에 스핀 코팅법으로 반복 코팅된 후, 450℃에서 10분, 650℃에서 2분간 반복 열처리되었다. 이와 같이 다양한 두께로 적층된 박막은 각 시편에 대해 최종적으로 650℃ 30분 동안 어닐링 처리되었다. 제조된 PZT 박막의 두께는 4100Å에서 1.75㎛사이의 4종이었다. 이어서 스퍼터링법으로 Pt전극이 PZT 막 위에 증착되었다. 제조된 PZT 박막의 결정 구조 조사를 위해 XRD, 그리고 미세 구조 및 전기적 특성을 알아보기 위해 FESEM과 P-E 이력 곡선이 각각 관찰되었다. 4100Å에서 1.75㎛까지 두께 증가에 따른 장비상의 포화 이력 한계로 잔류 분극(Pr)값이 25μC/㎠에서 다소 감소되었다. 측정된 X선 회절 결과에서 최초 4회 코팅시 perovskite 결정 구조로 성장한 결정립은 (111)배향이 우세하었으나, 두께가 증가됨에 따라 (111)/(110)값이 감소되었으며, 이를 통해 두께 증가에 따른 (111)배향성이 다소 감소됨을 알 수 있었다. 이상의 결과로부터 제조된 PZT 박막은 큰 힘과 높은 내전압 특성을 갖는 마이크로 압전 액츄에이터에 적용될 수 있을 것으로 생각되었다.

• Korean Journal of Materials Research
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• v.7 no.6
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• pp.522-528
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• 1997

RF-magnetron Sputtering Process를 이용하여 Pt/Ti/Si(100)기판위에 lanthanum-modified lead titanate 박막을 제작하였다. 기판온도와 증착시간이 증가함에 따라 증착율은 감소하였다. 기판온도가 증가함에 따라 fine grain들은 large grain으로 변화하였다. Perovskite구조는 기판온도 54$0^{\circ}C$, gas pressure 30mtorr에서 나타나기 시작하였다. 본 실험에서 perovskite 박막제작에 대한 조건은 기판온도 58$0^{\circ}C$, gas pressure 30mtorr였다. Pt/Ti/Si(100) 우선 배향된 박막을 얻었다. La양이 증가함에 따라 유전율, 항전계, 잔류분극량은 증가하였다. 중심주파수가 44.7MHz, 전파속도는 2680m/sec를 가지는 SAW filter 특성을 얻었다.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.141-146
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• 2009

PLZT ferroelectric thin films were deposited on Pt/Ti/$SiO_2$/Si substrate with $TiO_2$ buffer layer in between by rf magnetron sputtering method. In order to investigate the effect of Ar/$O_2$ partial pressure ratio on the ferroelectric properties of PLZT thin films, PLZT thin films were deposited at various Ar/$O_2$ partial pressure ratio ; 27/1.5 seem, 23/5.5 seem, 21/7.5 seem and 19/9.5 seem. The crystallinities of PLZT thin films were analyzed by XRD. The surface morphology was observed using FE-SEM. The P-E hysteresis loops, the remanent polarization characteristics and the leakage current characteristics were obtained using a Precision LC. The crystallinity and elaborateness of PLZT thin films were decreased as increasing the oxygen partial pressure ratio. And preferred orientation of PLZT thin films changed from (110) plane to (111) plane. The oxygen partial pressure ratio affects the thin film surface morphology and the ferroelectric properties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.69-74
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• 2007

[ $0.6Pb(Sc_{1/2}Ta_{1/2})O_3-0.4PbTiO_3$ ] (hereafter PSTT) ceramics were prepared by the molten salt synthesis (MSS) method using KCI as a flux. Formation of perovskite phase was investigated by a differential thermal analysis (DTA) and X-ray diffraction (XRD) analysis in the temperature range from $600^{\circ}C$ to $850^{\circ}C$. A 92% perovskite phase was synthesized at $750^{\circ}C$ for 2 hrs using the MSS method, while 82% perovskite phase was synthesized at $850^{\circ}C$ for 4ks using the calcining of mixed oxide (CMO) method. This result could be due to the improvement in reactivity of $Sc_2O_3$ by melting of KCI. The MSS specimen sintered at $1,100^{\circ}C$ for 4hrs showed a dielectric constant of 11,200, a remnant polarization of $13.5{\mu}C/cm^2$ and a coercive field of 10.198 kV/cm, which was discussed in view of the microstructure.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.446-452
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• 2007

[ $(Pb_{1.1},La_{0.08})(Zr_{0.65}.Ti_{0.35})O_3$ ] thin films on the $Pt/Ti/SiO_2/Si$, $TiO_2(interlayer)/Pt/Ti/SiO_2/Si$ substrate were fabricated by the R.F. magnetron-sputtering method and considered their characteristics depending on $TiO_2$ interlayer. Changing the deposition conditions of $TiO_2$ interlayer, we obtained $TiO_2$ anatase single phase and rutile single phase. PLZT was deposited on these substrates and analyzed by x-ray diffraction(XRD) for there crystallinity and orientation. To investigate $PLZT-TiO_2$, $TiO_2-Pt$ interface, glow discharge spectrometer(GDS) analysis was carried out and we performed electrical measurements for dielectric properties of PLZT thin films. The PLZT thin film on $TiO_2$ anatase interlayer was found to have (110)-preferred orientation and 12.6 ${\mu}C/cm^2$ remaining polarization value.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.170-175
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• 2004

The ferroelectric (Y $b_{x}$ $Y_{1-x}$)Mn $O_3$ thin films were fabricated by sol-gel method using Y-acetate, Yb-acetate, and Mn-acetate as raw materials. The stable (Y $b_{x}$ $Y_{1-x}$)Mn $O_3$ precursor solution (sol) was prepared through the reflux process with acetylaceton as a catalyst and coated on Si(100) substrate by spin coating. The heat treatment temperature and, Rw ($H_2O$/alkoxide moi ratio) dependence on crystallinity of thin films were studied. The lowest temperature for obtaining YbMn $O_3$phase and the optimum heat-treatment conditions were proved as at 7$50^{\circ}C$ and 80$0^{\circ}C$, respectively. The hexagonal YbMn $O_3$with c-axis preferred orientation could be obtained at Rw=1 condition. The remanent polarization for the thin films of x=0 or 1 was about 200 nC/㎤ while, for the specimens ot 0< x< 1, were 50∼100 nC/$\textrm{cm}^2$.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.202-208
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• 1997

Bi-layered SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si sibstrates by rf magnetron sputt-ering at room temperature and then were annealed at 75$0^{\circ}C$, 80$0^{\circ}C$ and 85$0^{\circ}C$ for 1 hour in oxygen at-mosphere. The film composition of SrBi2Ta2O9 was obtained after depositing at room temperature and annealing at 80$0^{\circ}C$. Excess 20mole% Bi2O3 and 30 mole% SrCO3 were added to the target to compensate for the lack of Bi and Sr in SBT film. 200 nm thick SBT film exhibited and dense microstructure, adielectric constant of 210, and a dissipation factor of 0.05 at 1 MHz frequency. The films exhibited Curie temperature of 32$0^{\circ}C$ and a dielectric constant of 314 at that temperature under 100 kHz frequency. The remanent polarization(2Pr) and the coercive field(2Ec) of the SBT films were 9.1 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm at an applied voltage of 3V, resspectively and the SBT film showed a fatigue-free characteristics up to 1010 cy-cles under 5V bipolar pulse. The leakage current density of the SBT film was about 7$\times$10-7A/$\textrm{cm}^2$ at 150 kV/cm. Fatigue-free SBT films prepared by rf magnetron sputtering can be suitable for application to non-volatile memory device.