• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.184-185
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• 2000

1 차원 자성 포토닉 결정은 원하는 파장에서 큰 페러데이 회전각과 투과율을 얻을 수 있기에 아주 흥미롭다. 두 종류의 유전체 층(S: $SiO_2$, T:T $a_2$ $O_{5}$)을 주기적으로 적층한 구조에, Bi를 다량 치환한 가네트 박막(M:B $i_{1.07}$ $Y_{1.93}$F $e_{5}$ $O_{12}$)을 결함층으로 삽입한 (A/B)$_{k}$ M/(B/A)$_{k}$ 의 구조를 갖는 1차원 자성 포토닉 결정의 자기 광학 특성을 수치해석하였다. 가시광과 적외선 영역에서 1차원 자성 포토닉 결정의 자성체 층의 두께( $d_{M}$ )와 유전체 층의 적층수(k)를 변화시키며, 투과율(T)과 페러데이 회전각($ heta$$_{F}$ ) 및 성능지수(Q)를 조사하였다. (중략). (중략)(중략)

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.186-187
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• 2000

1차원 자성 포토닉 결정이란, 결함층으로 삽입된 자성층에 빛이 국재화되어 거대한 페러데이 회전각($ heta$$_{F}$ )과 투과율(T)을 나타낸다는 점에서 주목을 받고 있다. 본 논문에서는 두 종류의 SiO$_2$와 Ta$_2$O$_{5}$를 절연층으로 하는 샌드위치 구조에 Bi를 치환한 가네트 박막을 결함층으로 하는 1차원 자성 포토닉 결정으로부터 가시광선이나 적외선 영역에서의 Bi함량에 따른 1차원 자성 포토닉 결정의 성능지수를 조사하였다. (중략)

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.99-105
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• 2000

One dimensional magneto-photonic crystal having structure of (A/B)$^{k/W}$(B/A)$^{k}$ , where M is a magnetic layer of highly Bi-substituted iron garnet, A and B are dielectric layers of $SiO_2$ and T $a_2$O$_{5/}$, and k is the stacking number of the dielectric layers, has been numerically analyzed as a function of the thickness (d$_{M}$) of M (1∼535 nm) and the stacking numer of k (5∼15). The transmittance, Faraday rotation, and figure of merit of the magneto-photonic crystal have been investigated both in the visible and infrared wavelengths. A factor of several and several tens greater Faraday rotation and figure of merit have been obtained compared to the single layer of M, at many localized modes. In the visible the maximum figure of merit of 0.15 was obtained ( = 720 nm) when k = 11 and d$_{M}$ = 375 nm with T : 0.54, $\theta$$_{F}$ = 8.13$^{\circ}$, which was a factor of 30 greater than that of single garnet layer. Much greater maximum figure of merit, 0.285, was obtained in the infrared ( = 1114 nm) when k = 11 and d$_{M}$ = 800 nm with T = 0.66, $\theta$$_{F}$ = 18$^{\circ}$, which was a factor of 100 greater than that of single garnet layer.

• Journal of the Korean Magnetics Society
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• v.13 no.1
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• pp.36-40
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• 2003

We have grown D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ (x = 0.5,1.0, 1.5,2.0) magnetic garnet thin films upon $Al_2$O3i and GGG substrate using Pechini process. The annealing temperature to get single phase D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ garnet is dependent on substrate, i.e. the annealing temperature for GGG substrate il 5$0^{\circ}C$ lower than that for $Al_2$ $O_3$ substrate. The grains of garnet thin film grown on GGG (111) plane align along [111] direction, and in this case the hysteresis curve does not saturate up to H : 5000 Oe. We attribute this phenomenon to rotation magnetization process. The maximum amount of Bi substitution in polycrystalline D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ thin film prepared by Pechini process is restricted to 2.0 Bi atom/unit cell, and this value is less than that in single garnet crystall grown by LPE method.own by LPE method.ethod.