• Journal of the Korean Magnetics Society
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• v.9 no.1
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• pp.41-47
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• 1999

$Buffer/[NiFe/Cu/CoFe(Co)/Cu]_N$ spin valve multilayers prepared by dc magnetron sputtering on a corning glass substrate using NiFe and CoFe(Co) posses different coercivities. Dependence of magnetoresistance on the type and thickness of buffer layer, thickness of Cu, NiFe, stacking number of multilayer, substrate temperature and annealing temperature in the form $[NiFe/Cu/CoFe(Co)/Cu]_N$ spin-valve multilayers were investigated. To evaluate effect of magnetoresistance for this samples, X-ray diffraction analysis, vibrating sample magnetometer analysis, and magnetoresistance measurement (4-probe method) were performed the maximum magnetoresistance ratio and coercivity were 7.5 % and 140 Oe, respectively for $Cr-50{\AA}/[NiFe-20{\AA}/Cu-{\AA}/Co-20{\AA}/Cu-50{\AA}]_10$ at substrate temperature of 9$0^{\circ}C$. Magnetoresistance slope maintained 0.25%/Oe until 15$0^{\circ}C$ of annealing temperature, and then decreased to 0.03%/Oe at 20$0^{\circ}C$. It was confirmed that the main factor of thermal stability was deteriorating of soft magnetic properties in the NiFe layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.74-83
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• 2001

In this study, the optimum structure of a magnetic thin film inductor was designed for application of DC-DC converters. The Ni$\sub$81/Fe$\sub$19/ (at%) alloy was selected as a high-frequency($\geq$MHz) magnetic thin film magnetron sputtering system. As-deposited NiFe thin films show similar magnetic properties compared to bulk NiFe alloys, indicating that they have a good film quality. The optimum design of dolenoid-type magnetic thin film inductors was performed utilizing a Maxwell computer simulator (Ansoftt HFSS V7.0 for PC) and parameters obtained from the magnetic properties of magnetic core materials selected. The high-frequency characteristics of the inductance(L) and quality factor(Q) obtained for the designed inductors through simulation agreed well with those obtained by theoretical calculations, confirming that the simulated result is realistic. The optimum structure of high-performance (Q$\geq$60, L = 1${\mu}$H, efficiency $\geq$90%), high-frequency ($\geq$5MHz), and solenoid-type magnetic thin film inductors was designed successfully.

• Journal of the Korean Magnetics Society
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• v.15 no.4
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• pp.250-255
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• 2005

A 8 MA/m-class pulsed field magnetometer has been constructed by composing a pulsed field magnet, a pickup coil, analog integrators, a digital storage oscilloscope and a personal computer. For precision measurements, a 3-axis compensation principle has been applied for the fabrication of pickup coil, and the compensation level of the order of $10^{-6}$ and the sensitivity of $5{\cdot}10^{-7}\;Am^2$ for magnetic moment have been obtained. The high sensitivity of the magnetometer is good enough for measurements of magnetic properties of rare earth magnets in small size or thin films shorter than $3\;mm{\phi}$ in diameter.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.11
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• pp.555-561
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• 2001

In this paper, the low power (1.5 W) solenoid-type magnetic thin-film transformers utilizing a $Ni_{81}Fe_{19)$ core material were designed and fabricated for 5 MHz-drive DC-DC converter application. The $20\mum$ thick copper films were used as the coils. The transformers fabricated in this work have the sizes of $3.08 mm\times25.5 mm\; and\; 6.15 mm\times12.75 mm.$ The optimum design of solenoid-type magnetic thin film transformers was performed utilizing the conventional equations, a Maxwell computer simulator (Ansoft HFSS V7.0 for PC), and parameters obtained from the magnetic properties of NiFe magnetic core materials. frequency characteristics of inductance, dc resistance (R), coupling factor (k) and gain of developed transformers were measured using HP4194A impedance and gain-phase analyzer. The fabricated transformers with the size of $6.15 mm\time12.75 mm$ exhibit the inductance of $0.83 \muH$, the dc resistance of $2.3\Omega$$\Omega$, the k of 0.91 and the gain of -1 dB at 5 MHz, which show the comparable results to those reported in the recent literatures. The measured high-frequency characteristics for the fabricated transformers agreed well with those obtained by theoretical calculations .

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.136-139
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• 1997

In this paper, we inveatigate frequency dependance of inductance effects of FeCoB amorphous magnetic films. First, amorphous magnetic film having near zero magnetostriction is the basic composition of (Fe$_{1-x}$ / $Co_{x}$)$_{79}$Si$_2$B$_{19}$ with x=0.94, 0.95 and in order to decrease magnetio . anisotropy, the film was annealed in 28$0^{\circ}C$/30min, 40$0^{\circ}C$/30min, 40$0^{\circ}C$/1hr with near crystallization temperature under non-magnetic field. As result of investigation, in case of x=7.95 than x=0.94, we could have obtained high values, which inductance ratios in the low frequency was 488%. And Quality factor Q was under 0.7 in all sample, in case of annealed in 28$0^{\circ}C$/30min, we could have obtained highest value, which x=0.9fl is about 0.62 in 400[kHz], and in case of x=0.95 was about 0.35 in 1[MHz].z].].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.413-417
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• 1998

In this paper, we investigate frequency dependance of inductance of FeCoB amorphous magnetic films. $(Fe_{1-x}Co_x)_{79}Si_2B_{19}$ was used as the basic composition of amorphous magnetic film having near zero magnetostriction. The amorphous magnetic films were fabricated with x=0.94 and x=0.95 by using sputtering method at high frequency. The films were anneald under non-magnetic field and near crystallization temperatures(30min at $280^{\circ}C$, 30min and 1hr at $400^{\circ}C$, respectively). As the results of the experiments with the fabricated films, the lowest coercive force was 0.084[Oe] at 400[W] of the input power and the crystallization temperature was $360^{\circ}C$ . In the case 30min at 40$0^{\circ}C$ the inductance value in the low frequency with x=0.95 was higher by 488% than that with x=0.94. The quality factor Q was below 0.7 for all samples. We obtained the highest quality value at 400[KHz] with 30min at $280^{\circ}C$ and x=0.94. The value was about 0.62. Also, the quality factor value was about 0.35 at 1[MHz] with 30min at $280^{\circ}C$ and x=0.95.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.278-279
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• 2005

The crystallization of FePt/MgO(100) magnetic thin films of various thicknesses has been studied using synchrotron x-ray scattering, atomic force microscope, and vibrating sample magnetometer. In film with a 500-${\AA}$-thick, ordered (fct) FePt phase was dominantly crystallized into perpendicular (001) grains keeping the magnetically easy c-axis normal to the film plane during annealing. In film with a 812-${\AA}$-thick, however, longitudinal (110) grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular (001) grains. The behavior of the magnetic properties was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the c-axis oriented perpendicular grains near the film/substrate interfacial area.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.22-27
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• 2000

Amorphous FeCoSiB films with high saturation magnetostriction and excellent soft magnetic properties have been studied to evaluate their strain sensitivity. Films were subjected to a strain by bending of their substrates, which caused a change in the magnetic anisotropy of films via magnetoelastic coupling. Films were exhibited a figure of merit $F=({\Delta}{\mu}/{\mu})/{\varepsilon}$ (change in film permeability $\mu$ per unit strain $\varepsilon$) of $1.2{\times}10^5$, which is comparable with that of amorphous ribbons. To make a study of application of magnetostrictive films as strain sensor elements, we have prepared a micro-patterned film by means of the photolithography and ion milling processes. Impedance change in the patterned films, when strain was applied, was measured over the frequency range from 1 MHz to 1 GHz. Reflecting a large value of figure of merit F, a variation of 46% impedance of films was shown at 100 MHz frequency when a strain of $300{\times}10^{-6}$ was applied.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.1040-1044
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• 1995

Magnetic garnet films of (YSmLuCa)$_3$(FeGe)$\_$5/O$\_$12/ have been grown by the liquid phase eqitaxy method on the substrate of non-magnetic garnet Gd$_3$Ga$\_$5/O$\_$12/. The variation of Sm ion concentration were varied 0.3, 0.4, 0.6, mole/formula unit respectively. The magnetic properties of the samples for the bubble magnetic materials, such as, line width ΔH of ferromagnetic resonance (FMR), magnetic saturation induction 4$\pi$Ms, wall mobility u$\_$w/ uniaxial magnetic anisotropy energy Ku, were measured and discussed the relations between these properties. The line width ΔH decreases with increasing 4$\pi$Ms, and with decreasing Sm concentration. The anisotropy energy Ku increases not only with increasing Sm ion concentration, but also increasing 4$\pi$Ms. The value of wall mobility u$\_$w/ increase with increasing 4$\pi$Ms and decreases with increasing Sm concentration. We define a physical constant Eι from the fact that the product of 4$\pi$Ms and ΔH is constant with dimension of energy density. The Eι is dependent only on Sm concentration.density. The Eι is dependent only on Sm concentration.

• Journal of the Korean Magnetics Society
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• v.21 no.3
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• pp.83-87
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• 2011

We have analyzed the torque signals measured in synthetic antiferromagnetic (SAF) coupled CoFeB/Ru/CoFeB thin film, which signals were drastically changed at flopping field ($H_F$) and saturation field ($H_s$). The minimum value of negative uniaxial anisotropy constant ($-\;K_1$) was appeared at HF. The $-\;K_1$ was due to the zero net magnetization by the antiferromagnetic coupling between two ferromagnetic layers. Whereas, the biaxial anisotropy constant (K2) was induced in the field range of $H_F$ < H < $H_s$. The induced $K_2$ was originated from deviation angles between magnetization directions of two ferromagnetic layers. And at H > $H_s$, intrinsic uniaxial anisotropy constant of CoFeB layer was observed. These change of the anisotropy constant with magnetic field was explained by the magnetization process of two ferromagnetic layers based on Stoner-Wohlfarth model calculation for SAF thin film.