• Title/Summary/Keyword: 자기 저항

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A Study on the Conducting Behavior of La-Ca-Mn-O in the vicinity of Phase Transition Temperature (임계점 부근에서 LCMO의 전도 특성에 대하여)

  • 송하정;김우진;권순주
    • Journal of the Korean Magnetics Society
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    • v.8 no.4
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    • pp.179-184
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    • 1998
  • Colossal magnetoresistance is closely related to (but is not) the abrupt change of electrical resistivity in the vicinity of Curie temperature, which is caused by the temperature dependent paramagnetic-ferromagnetic phase transition and concurrent change of electrical conducting mechanism. A resistivity-temperature equation is presented to fully describe the overall behavior, especially the abrupt change. The main ingredients of the equation are a simple effective media theory and a function for the temperature dependent fraction of ferromagnetic phase. The model fits very well to the measured resistivity-temperature curve of $La_{0.7}Ca_{0.3}MnO_3$.

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Colossal magnetoresistance of double-ordered perovskite $Sr_{2}FeMoO_{6}$ ceramics and sputter-deposited films ($Sr_{2}FeMoO_{6}$ 소결체와 스퍼터링법으로 제조된 박막의 초거대자기저항현상에 관한 연구)

  • 이원종;장원위
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.1
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    • pp.36-41
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    • 2002
  • Abstract The stoichiometric and double-ordered perovskite $Sr_2FeMoO_6$ (SFMO) polycrystalline ceramics were fabricated by sintering at above $900^{\circ}C$ in $H_2$(5%)/Ar reductive ambient. SMO polycrystals showed good ferromagnetic properties andmagnetrotesistqnce ratios of about 15 % at 8K and 3 % at room temperature. Amorphous SFMO thin films were deposited on $LaA1O_3$ and $SrTiO_3$ single crystal substrates using rf sputtering method with the SFMO polycrystalline ceramic target. Double-ordered perovskite polycrystalline SFMO thin films were fabricated by solid state crystallization by annealing the deposited amorphous films at above $680^{\circ}C$ in $H_2$(5%)/Ar reductive ambient. SFMO thin films exhibited ferromagnetic behavior. Their magnetroresistance ratios, however, were only 0.3~0.5% at 8K and disappeared with increasing the measuring temperature. This was attributed to the absence of magnetic spin tunneling between grains due to the porous structure and non-stoichiometric composition of the deposited films.

Colossal Magnetoresistance in Chalcogenide Spinels $Ni_xFe_{1-x}Cr_2S_4(X = 0.05, 0.1, 0.2)$ (Spinel 유화물 $Ni_xFe_{1-x}Cr_2S_4(X = 0.05, 0.1, 0.2)$의 초거대자기저항(CMR)현상에 관한 연구)

  • 박재윤
    • Journal of the Korean Magnetics Society
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    • v.11 no.4
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    • pp.151-156
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    • 2001
  • Recently many studies on manganese oxides Ln$_{1-x}$A$_{x}$MnO$_3$(Ln=La, Pr, Nd lanthannide; A=Ca, Sr, Ba, Pb +2 ions) reported CMR properties. CMR have been also found in chalcogenide spinels. We have investigated that Ni ion substitutions for Fe ion have effects on CMR properties in chacogenide spinels Ni$_{x}$Fe$_{1-x}$Cr$_2$S$_4$. It was found that with increasing Ni concentration Jahn-Teller distortion was strengthened and Curie temperature T$_{c}$ was increased. CMR properties could be explained with Jahnl-Teller effect, half-metallic electronic structure, and the alignment of magnetic domain due to the strong magnetic field, which is different in that double exchange interactions dominate CMR properties in manganese oxides.

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Magnetic and Structural Properties of CoFeZr Alloy Films and Magnetoresistive Properties of Spin Valves Incorporating Amorphous CoFeZr Layer (CoFeZr 합금박막의 미세구조, 자기적 특성 및 비정질 CoFeZr 합금박막을 사용한 스핀밸브의 자기저항 특성에 관한 연구)

  • Ahn, Whang-Gi;Park, Dae-Won;Kim, Ki-Su;Lee, Seong-Rae
    • Journal of the Korean Magnetics Society
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    • v.18 no.6
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    • pp.227-231
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    • 2008
  • Magnetic and structural properties of CoFeZr alloy films as a function of Zr concentration and magnetoresistive properties of spin valves incorporated with amorphous CoFeZr alloy films have been studied. Magnetization and coercivity of CoFeZr alloy films decreased as the Zr content increased. A single amorphous CoFeZr phase was formed when the Zr content is about above 18 at%. Magnetoresistance ratio and exchange coupling field of spin valves with amorphous CoFeZr were reduced slightly as compared with spin valves with CoFe because the resistance of amophous CoFeZr is higher than that of crystalline CoFe. However, the ${\Delta}{\rho}$ of spin valves with amorphous CoFeZr was improved due to reduction of current shunting.