• Title/Summary/Keyword: 자기터널접합

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$NiFe/Co/Al_2O_3/Co/IrMn$ 접합의 터널링 자기저항효과

  • 홍성민;이한춘;김택기
    • Journal of the Korean Magnetics Society
    • /
    • v.9 no.6
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    • pp.291-295
    • /
    • 1999

  • $NiFe/Co/Al_2O_3/Co/IrMn$ tunneling junctions were grown on (100)Si wafer and their spin-valve tunneling magnetoresistance (TMR) was studied. The tunneling junctions were grown by using a 5-gun RF/DC magnetron sputter. $Al_2O_3$ barrier layer was formed by exposing Al layer to oxygen atmosphere at 6$0^{\circ}C$ for 72 hours. Strong exchange coupling interaction is observed between the ferromagnetic Co and the antiferromagnetic IrMn of Co/IrMn bilayer when IrMn is 100$\AA$ thick. $NiFe(183\;{\AA})/Co(17\;{\AA})/Al_2O_3(16\;{\AA})/Co(100\;{\AA})/IrMn(100\;{\AA})$ tunneling junction shows best TMR ratio of about 10% in the applied magnetic field range of $\pm$20 Oe. The TMR ratio is improved about 23% and electrical resistance is decreased about 34% when annealed at 200 $^{\circ}C$ for 1 hour in magnetic field of 330 Oe, parallel to the bottom electrode. With increasing the active area of junction the TMR ratio increases while electrical resistance decreases.

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