• Title/Summary/Keyword: 자기결정 이방성

Search Result 102, Processing Time 0.03 seconds

Influence of Layer-thickness and Annealing on Magnetic Properties of CoSiB/Pd Multilayer with Perpendicular Magnetic Anisotropy (박막 두께 및 열처리가 수직자기이방성을 갖는 CoSiB/Pd 다층박막의 자기적 특성에 미치는 영향)

  • Jung, Sol;Yim, Haein
    • Journal of the Korean Magnetics Society
    • /
    • v.26 no.3
    • /
    • pp.76-80
    • /
    • 2016
  • CoSiB is the amorphous ferromagnetic material and multilayer consisting of CoSiB and Pd has perpendicular magnetic anisotropic property. PMA has strong advantages for STT-MRAM. Moreover, amorphous materials have two advantages more than crystalline materials: no grain boundary and good thermal stability. Therefore, we studied the magnetic properties of multilayers consisting of the $Co_{75}Si_{15}B_{10}$ with PMA. In this study, we investigated the magnetic property of the [CoSiB (3, 4, 5, and 6) ${\AA}$/Pd(11, 13, 15, 17, 19,and $24{\AA})]_5$ multilayers and found the annealing temperature dependence of the magnetic property. The annealing temperature range is from room temperature to $500^{\circ}C$. The coercivity and the saturation magnetization of the CoSiB/Pd multilayer system have a close association with the annealing temperature. Moreover, the coercivity especially shows a sudden increasing at the specific annealing temperature.

Effects of Shape Anisotropy on Memory Characteristics of NiFe/Co/Cu/Co Spin Valve Memory Cells (NiFe/Co/Cu/Co 스핀밸브 자기저항 메모리 셀에서 형상자기이방성이 메모리 특성에 미치는 영향)

  • 김형준;조권구;주승기
    • Journal of the Korean Magnetics Society
    • /
    • v.9 no.6
    • /
    • pp.301-305
    • /
    • 1999
  • NiFe(60$\AA$)/Co(5$\AA$)/Cu(60$\AA$)/Co(30$\AA$) spin valve thin films were patterned into magnetoresistive random access memory (MRAM) cells by a conventional optical lithography process and their output and switching properties were characterized with respect to the cell size and geometry. When 1 mA of constant sense current was applied to the cells, a few or a few tens of mV of output voltage was measured within about 30 Oe of external magnetic field, which is an adequate output property for the commercializing of competitive MRAM devices. In order to resolve the problem of increase in the switching thresholds of magnetic layers with the downsizing of MRAM cells, a new approach using the controlled shape anisotropy was suggested and interpreted by a simple calculation of anisotropy energies of magnetic layers consisting of the cells. This concept gave a reduced switching threshold in NiFe(60$\AA$)/Co(5$\AA$) layer consisting of the patterned cells from about 15 Oe to 5 Oe and it was thought that this concept would be much helpful for the realization of competitive MRAM devices.

  • PDF

Ferromagnetic Resonance Study of a Nanocrystalline $Fe_{76}Cu_{1}Nb_{3}Si_{14}B_{6}$ Alloy (초미세결정합금 $Fe_{76}Cu_{1}Nb_{3}Si_{14}B_{6}$의 강자성공명 연구)

  • 이수형;김원태;장평우;김약연;임우영
    • Journal of the Korean Magnetics Society
    • /
    • v.4 no.1
    • /
    • pp.7-11
    • /
    • 1994
  • Ferromagnetic resonance experiment was performed to study the variations of micromagnetic structure with heat treatment of melt spun $Fe_{76}Cu_{1}Nb_{3}Si_{14}B_{6}$ alloy for 1h at every $50^{\circ}C$ in the temperature range of $400^{\circ}C-700^{\circ}C$. The variations of micromagnetic structure was discussed qualitatively in terms of the variations of line width ${\Delta}H_{p-p}$ and resonance magnetic field $H_{res}$. With increasing armealing temperature to $400^{\circ}C$, ${\Delta}H_{p-p}$ decreases and $H_{res}$ increases due to the decrease in magnetic anisotropy resulting from structural relaxation during heat treatment. With increasing annealing temperature from 400 to $500^{\circ}C$, ${\Delta}H_{p-p}$ increases and $H_{res}$ decreases due to the increase in magnetic anisotropy resulting from the formation of nanocrystalline particles embedded in an amorphous matrix. With increasing armealing temperature from 500 to $550^{\circ}C$, ${\Delta}H_{p-p}$ decreases and $H_{res}$ increases due to the decrease in magnetic anisotropy resulting from the formation of homogeneous nanocrystalline structure with a minor amorphous phase. Further increase in armealing temperature above $550^{\circ}C$ C causes ${\Delta}H_{p-p}$ to increase and $H_{res}$ to decrease due to the increase in magnetic anisotropy due to the formation of inhomogeneous grain structure and intermetallic compounds.

  • PDF

Effects of an Underlayer on the Development of Perpendicular Magnetic Anisotropy in Co/Ni Multilayers (Co/Ni 다층박막의 수직자기이방성 발현에 대한 하지층의 영향)

  • Lee, K.S.;Lee, K.J.;Jung, M.H.;Shin, K.
    • Journal of the Korean Magnetics Society
    • /
    • v.18 no.3
    • /
    • pp.94-97
    • /
    • 2008
  • We investigated how the magnetic anisotropy in $[Co(2\;{\AA})/Ni(8\;{\AA})]{\times}N$ multilayers varied with the type and thickness of an underlayer. The magnetic measurements clearly showed that the perpendicular magnetic anisotropy could be developed in the Co/Ni multilayer by adopting an underlayer with [111] texture. The coercivity of the Co/Ni multilayer increased from 99 Oe to 430 Oe as the thickness of an Au underlayer increased from $50\;{\AA}$ to $500\;{\AA}$. The increase in coercivity is ascribed to the development of the stronger [111] texture in the Co/Ni multilayer as an Au underlayer gets thicker.

Mössbauer Study of AIFeO3 (AIFeO3 물질의 Mössbauer 분광학적 연구)

  • We, Jee-Hoon;Kim, Sam-Jin;Kim, Chul-Sung
    • Journal of the Korean Magnetics Society
    • /
    • v.16 no.1
    • /
    • pp.14-17
    • /
    • 2006
  • [ $AIFeO_3$ ]has been studied by x-ray diffraction (XRD), vibrating sample magnetometer, Mossbauer spectroscopy. The crystal structure is found to orthorhombic with the lattice parameters being $a_0=4.983\;{\AA},\;b_0=8.554\;{\AA},\;c_0=9.239\;{\AA}$, Magnetic hysteresis curve for $AIFeO_3$ showed weakly ferromagnetic phase at room temperature and a asymmetric shape dependent on the direction of applied field at low temperature. The Curie temperature determined by the temperature dependence of magnetization is 250 K. Mossbauer spectra of $AIFeO_3$ have been taken from 4.2 K to 295 K. Isomer shift at room temperature are found to be $0.11\~0.32\;mm/s$, which is consistent with ferric state. The absorption lines widths become broader with increasing temperature, which is attributed to the Fe ions distribution of each cation site and anisotropy energy difference of each sublattice.

First Principle Studies on Magnetism and Electronic Structure of Perovskite Structured CoFeX3 (X = O, F, S, Cl) (페로브스카이트 구조를 가지는 CoFeX3(X = O, F, S, Cl) 합금의 자성과 전자구조에 대한 제일원리계산)

  • Jekal, Soyoung;Hong, Soon Cheol
    • Journal of the Korean Magnetics Society
    • /
    • v.26 no.6
    • /
    • pp.179-184
    • /
    • 2016
  • For an industrial spin-transfer torque (STT) MRAM, low switching current and high thermal stability are required, simultaneously. For this point of view, it is essential to find magnetic materials which satisfy high spin polarization and strong perpendicular magnetocrystalline anisotropy (MCA). In this paper, we investigate electronic structures and MCA energies of perovskite $CoFeX_3$ (X = O, F, S, Cl). For X = F and Cl, spin polarization at the Fermi level are 97 % and 96 %, respectively, which are close to a half metal. Furthermore, Co-terminated 5-monolayer (ML) $CoFeX_3$ (X = O, F, S, Cl) films show perpendicular MCA. In particular, the MCA energy of the Co-terminated $CoFeCl_3$ is about 1.0 meV/cell which is three times larger than that of a 5-ML CoFe film. Therefore, we expect to realize a magnetic material with high spin polarization and strong perpendicular MCA energy by utilizing group 6 and 7 elements in the periodic table, and to contribute to commercializing of the STT-MRAM.

Magnetic Properties and Domain structures of Fe-based Amorphous Alloys with Magnetic Annealing (자장열처리시킨 Fe기 비정질합금의 자기적성질과 자구구조)

  • 김태호;정광호;송진태
    • Electrical & Electronic Materials
    • /
    • v.1 no.4
    • /
    • pp.319-332
    • /
    • 1988
  • 높은 포화자속밀도와 낮은 철손을 갖는 Fe/aub 80/B$_{12}$Si$_{8}$ 비정질합금을 일반열처리, 자장열처리시켜 그의 자기적특성과 자구구조와의 관계를 조사하였다. 이를 위하여 Fe$_{80}$B$_{12}$Si$_{8}$ 비정질리본을 단롤법으로 제작하여 결정화온도를 측정하였으며 측정된 결정화온도 이하의 여러 온도에서 30분간 Ar-gas 분위기하에서 일반열처리, 자장열처리를 행하였다. 이와같이 하여 준비된 시료의 자기적특성을 조사하기 위하여 D.C., A.C. Recorking Fluxmeter를 이용하였으며 자구구조는 Bitter method로 관찰하였다. as-cast 상태의 시료를 일반열처리함에 따라 내부응력이 완화되면서 maze자구가 점차 사라지고 wave형태의 180.deg.자구가 관찰되었다. 동시에 자화과정에 있어서 자기이력곡선은 Barkhausen jump가 없어 smooth하였다. 그리고 자장열처리시에는 as-cast 상태나 일반열처리에 비해 자기적특성이 현저하게 향상되었으며 이는 열처리를 행함에 따라 내부응력이 완화되면서 maze 자구가 없어지고 일축자기 이방성으로 리본길이방향에 평행하게 형성된 180.deg.자구에 기인하는 것이라 사료된다. 그리고 자장열처리의 경우, 폭방향으로 열처리한 리본의 자구폭은 길이방향으로 열처리한 리본의 폭보다 미세하였으며 전자의 이력손실이 후자의 것보다 더 컸다.다.

  • PDF

Fabrication of 3-dimensional magnetic sensor by anisotropic etching in TMAH (TMAH에 의한 이방성 식각을 이용한 3차원 자기센서의 제작)

  • Jung, Woo-Chul;Nam, Tae-Chul
    • Journal of Sensor Science and Technology
    • /
    • v.8 no.4
    • /
    • pp.308-313
    • /
    • 1999
  • This paper will present an anisotropic etching in TMAH technique used in the fabrication of three-dimensional magnetic field vector sensor based on angled Hall plate structure. This sensor design relies on simultaneously detecting all magnetic field vector components using Hall plates that are imbedded into the silicon [111] sloped-surface of bulk micromachined cavity by the anisotropic etching of [100] silicon. The fabricated Hall elements has relatively improved sensitivity compare to convensional Hall elements for three-dimensional magnetic field sensing. The product sensitivity of 547V/AT at the supply current of 1.0mA was achived. The corresponding limit in the detection of magnrtic field is 0.07G that calculated by measured power spectral density(PSD) in magnetic sensor output.

  • PDF