• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.59-72
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• 1999

In this thesis, we measured the Barkhausen effect of CoFeSiB amorphous ribbon and then investigated its possibility to be used as a sensor material. We used a sample of composition $($Fe_{0.06}$$Co_{0.94}$)_${0.79}$$Si_{2.1}$$B_{18.9}$ with a thickness 12[pm1, width 2.5[rnml and length 5[cm], which was fabricated by a single roll method. In order to improve magnetic characteristics of the sample, we had carried on annealing in the magnetic field and in none magnetic field. And, experimented results to the magnetic characteristics show that the ribbon has large Barkhausen jump even in weak magnetic field below 0.5[0el. From the results, we confirmed that the sample can be used as an magnetic sensor material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1305-1309
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• 2003

To utilize FeCoSiB amorphous films for magnetoelastic sensors, the temperature dependency of magnetization (M-T curve) and the magnetization properties of the amorphous films were investigated in this study. As the amount of cobalt In the films increased, the Curie temperature decreased but the crystallization temperature increased. In addition to this, the crystallization temperature was lower than the Curie temperature in the film containing 20 at% cobalt. The optimized annealing condition was set up by analyzing the H-T curve. And then, the amorphous film that has excellent magnetic properties and uni-axal anisotropy could be prepared for construction of the magnetoelastic sensor devices. The coercive force of the film was below 0.5 Oe and the anisotripic field was about 5 Oe.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.252-255
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• 1998

In this paper, we investigate the magneto-impedance(M1) effect of the FeCoSiB amorphous magnktic films. The amorphous magnetic film having near zero magnetostriction is fabricated by using the sputtering method, and then annealed in magnetic field. When the external magnetic field is directly applied to the fabricated film, the voltage amplitude between both side of the magnetic film varies about 76.2% at 120[MHzl and the impedance varies about 2.1%/0e. Thus, we find that the fabricated magnetic film has the characteristics of good sensor element.