• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.151-151
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• 2010

본 연구에서는 배위자로 공액계 벤젠고리로 연결된 중심금속이 이리듐인 착물화합물과 합성하여 인광재료로서의 가능성을 실험하였다. 새로운 이리듐착물화합물의 화학적 구조를 알아보기 위해 $^1H$-NMR, $^{13}C$-NMR, UV-vis, spectrophotometer를 사용하였으며, 광 물리학적, 전기화학적 특성에 대한 측정은 spectrofluorometer, cyclic voltammetry를 통하여 측정하였다. 이리듐 단핵 및 이핵착체는 589~598nm의 영역에서 발광파장이 확인되었으며, DMSO[$5{\times}10^{-5}$]용액에서 양자효율이 단핵 착물화합물의 경우 0.1, 이핵착물화합물의 경우 0.13으로 나타났다. 이핵 이리듐착물화합물의 전기화학적 특성은 energy gap은 2.45eV, optical band gap은 2.58eV로 계산되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.154-154
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• 2010

We have developed transparent OLED with green phosphorescent doped layer using transparent metal cathode deposited by thermal evaporation technique. Phosphorescent guest molecule, $Ir(ppy)_3$, was doped in host mCP for the green phosphorescent emission. Ca/Ag double layers were used as a cathode material of transparent OLED. The turn-on voltage of OLED was 5.2 V. The highest efficiency of the device reachs to 31 cd/A at 2 mA/$cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.155-155
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• 2010

We have investigated organic light-emitting devices by doping phosphorescent orange and fluorescent blue emitters into the separate layers of single host. The electroluminescence spectra and current efficiency were strongly dependent on the location of each doped layers. The luminance-voltage (L-V) characteristics of the device2 (ITO/Hole Transport Layer/Orange Phosphorescent emissive layer/Blue Fluorescent emissive layer/Electron Transport Layer/liF/Al) showed the maximum current efficiency of 19.5 cd/A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.152-152
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• 2010

본 연구에서는 인광 효과가 큰 heavy metal 인 이핵 Iridium 착체가 합성된 구조적, 광학적 및 전기적 특성을 배경으로 하였다. 가교제로는 카본 conjugated 된 리간드 bipyridine계 배위자를 사용하여 단핵 및 이핵 Platinum 착물 화합물을 합성 하였다. 합성 되어진 이핵 Platinum 착물 화합물의 화학적 구조를 결정하기 위해 $^1H(^{13}C)$-NMR, UV-vis, Spectro Photometer, MALDI TOF-MS 등을 사용하였으며, 광 물리적, 전기화학적 측정을 Spectrofluoromete, Cyclic Voltammetry를 통해 관찰 하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.153-153
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• 2010

We have developed blue phosphorescent organic light emitting diode using spin-coated poly(9-vinylcarbazole) (PVK) host layer doped with blue phosphorescent material, Iridium(III) bis(4,6-difluorophenyl)-pyridinato-N,C2) picolinate (FIrpic). the concentration of FIrpic dopants was varied from 2% to 10%. The electrical and optical characteristics of the blue phosphorescent OLED with PVK:FIrpic layer were investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.323-326
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• 2009

We have developed blue-emitting phosphorescent organic light emitting diodes (OLEDs) using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) and tris (8-quinolinolato)aluminum ($Alq_3$) electron transport layers. As blue dopant and host materials, bis[(4,6-di-fluorophenyl)-pyridinate-N,C2']picolinate (FIrpic) and N,N'-dicarbazolyl-3,5-benzene (mCP) were used, respectively. The driving voltage, current efficiency and emission characteristics of devices were investigated. While the driving voltage was about $1{\sim}2$ V lower in the device with an $Alq_3$ layer, the current efficiency was about 66 % higher in the device with BCP electron transport layer. the blue phosphorescent OLED with BCP layer exhibited higher purity of color, resulting from a relatively weak electroluminescence intensity at 500 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.351-352
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• 2008

A new high efficient red PhOLED using a host of $Bebq_2$ and double dopants of $(pq)_2$Ir(acac) and SEC-R411 have been fabricated and evaluated. The device doubly doped with $(pq)_2$Ir(acac) and SFC-R411 showed the current efficiency improvement of 22% under a luminance of 10000 cd/$m^2$ in comparision with the device singly doped with SFC-R411. The luminance, current efficiency and central wavelength of the doubly doped device were 9300 cd/$m^2$ at 7V, 11.1 cd/A under a luminance of 10000 cd/$m^2$ and 625 nm, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.391.1-391.1
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• 2014

광물질로 인광물질을 사용한 유기발광다이오드(Organic Light Emitting Diode, OLED)는 재결합에 의해 형성된 여기자를 발광에 모두 이용할 수 있기 때문에 내부 양자효율이 100%로 알려져 있다. 하지만 유기층에서 발생된 빛이 소비자에게 전달되기까지의 경로에서 발생되는 wave guiding effect로 인해, 발생된 빛의 20%만이 전달된다. 특히 bottom emission type의 OLED에서 glass와 air사이의 굴절률이 달라 발생되는 전반사에 의해 손실되는 빛의 양은 35%에 달한다. 따라서 본 연구에서는 glass와 air사이의 전반사를 줄이고 광추출을 위해 습식 방법으로 hemisphere type의 ZnS를 제작하였다. 제작된 ZnS는 직경 200nm까지 성장하였으며, 이렇게 제작된 ZnS nano lens가 적용된 OLED device에서 휘도가 20% 이상 향상되는 것을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT. polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.312-315
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• 2001

Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT, Polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.