• Journal of the Korean Ceramic Society
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• v.38 no.5
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• pp.474-478
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• 2001

유기 화학 기상 증착법(MOCVD)을 이용하여 반응기체 $O_2$의 양 및 Y와 Mn의 운반기체 비(Y/Mn)를 변화시켜가며 Si(100) 기판 위에서 MFSFET(metal-ferroelectric-semiconductor field effect transistor) 구조의 YMnO$_3$박막을 증착하였다. 반응기체 $O_2$의 양이 150sccm일 때 Y/Mn=2와 3인 경우 단일상의 육방정계 YMnO$_3$박막이 형성되었다. YMnO$_3$박막의 전기적 특성은 사방정계 YMnO$_3$박막에서는 나타나지 않았으나, 육방정계 YMnO$_3$박막의 경우 결정립 크기에 영향을 받아 단일상의 육방정계 YMnO$_3$박막 중 결정립 크기가 150nm~200nm(Y/Mn=2)인 경우에는 잔류분극이 100nC/$ extrm{cm}^2$인 P-E 이력곡선의 특성을 나타내었다.

• Korean Journal of Crystallography
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• v.6 no.1
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• pp.49-55
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• 1995

The oriented islands of cubic galium nitride are grown on the (0001) surface of hexagonal GaN epitaxial films by halide vapour phase epitaxial process. The mutual orientation of cubic β-GaN and hexagonal α-GaN phase was observed as : [110](111) β-GaN//[1120](0001) α-GaN. Trigonally faced islands of β-GaN occupy the twined positions in relation to (111) plane in parallel to the film surface. The band gap value for β-GaN determuned from photo and local catchodoluminescent measurments is estimated to be 3.18±0.30eV at room temperature.

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.38-39
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• 2005

• Proceedings of the Korean Fiber Society Conference
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• 2001.10a
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• pp.275-278
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• 2001

나일론 11[poly(undecanolactam)]은 적어도 5개의 결정형태를 가지며 삼사정계의 $\alpha$형, 단사정계의 $\beta$형 그리고 3개의 육방정계 또는 가육방정계의 형태(${\gamma}$,$\delta$,$\delta$')를 갖는다고 알려져 있다. $\alpha$형은 95$^{\circ}C$ 이하에서 안정하고 $\delta$형은 95$^{\circ}C$ 이상에서 안정하다. 용융상태 또는 5형에서 급냉하면 준안정 상태의 $\delta$'형을 형성한다. $\alpha$형을 trifluoroacetic acid로 처리하면 안정할 ${\gamma}$형이 얻어진다[1-2]. (중략)

• Proceedings of the Korean Magnestics Society Conference
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• 2007.12a
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• pp.6-7
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• 2007

• Korean Chemical Engineering Research
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• v.53 no.5
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• pp.620-626
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• 2015

$Ho^{3+}$ doped $SrAl_2O_4$ upconversion phosphor powders were synthesized by spray pyrolysis, and the crystallographic properties and luminescence characteristics were examined by varying activator concentrations and heattreatment temperatures. The effect of organic additives on the crystal structure and luminescent properties was also investigated. $SrAl_2O_4:Ho^{3+}$ powders showed intensive green emission due to the $^5F_4/^5S_2{\rightarrow}^5I_8$ transition of $Ho^{3+}$. The optimal $Ho^{3+}$ concentration in order to achieve the highest luminescence was 0.1%. Over this concentration, emission intensities were largely diminished via a concentration quenching due to dipole-dipole interaction between activator ions. According to the dependence of emission intensity on the pumping power of a laser diode, it was clear that the upconversion of $SrAl_2O_4:Ho^{3+}$ occurred via the ground state absorption-excited state absorption processes involving two near-IR photons. Synthesized powders were monoclinic as a major phase, having some hexagonal phase. The increase of heat-treatment temperatures from $1000^{\circ}C$ to $1350^{\circ}C$ led to crystallinity enhancement of monoclinic phase, reducing hexagonal phase. The hexagonal phase, however, did not disappear even at $1350^{\circ}C$. When both citric acid (CA) and ethylene glycol (EG) were added to the spray solution, the resulting powders had pure monoclinic phase without forming hexagonal phase, and led to largely enhancement of crystallinity. Also, N,N-Dimethylformamide (DMF) addition to the spray solution containing both CA and EG made it possible to effectively reduce the surface area of $SrAl_2O_4:Ho^{3+}$ powders. Consequently, the $SrAl_2O_4:Ho^{3+}$ powders prepared by using the spray solution containing CA/EG/DMF mixture as the organic additives showed about 168% improved luminescence compared to the phosphor prepared without organic additives. It was concluded that both the increased crystallinity of high-purity monoclinic phase and the decrease of surface area were attributed to the large enhancement of upconversion luminescence.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.2
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• pp.75-81
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• 2011

Hydroxyapatite (HAP) crystals with hexagonal structure have been successfully synthesized by using EDTA(ethylene diamine tetraacetic acid) as chelate under hydrothermal condition. The as-prepared HAp powders were characterized by XRD and SEM. The XRD result indicated that the products were preferentially oriented along c-axis. The SEM photographs showed that the morphology of the HAp crystals was well controlled by the reaction parameters such as temperature, pH value, and the molar ratio of EDTA/Ca.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.152-155
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• 2007

We have studied electronic structures and magnetic properties of $YMnO_3,\;ScManO_3$ with hexagonal structure using Full Potential Linearized Augmented Plane Wave (FLAPW) method based on LSDA method. LSDA calculation results show that multiferroic $YMnO_3$ shows energy gap due to hexagonal symmetry and magnetic interaction. Because of insulating gap and small Y ion, $YMnO_3$ shows magnetic and ferroelectric state. However, $ScMnO_3$ does not show the energy gap because of strong hybridization of Mn-O for LSDA calculation. We confirmed the stability of multiferroic state for $YMnO_3\;and\;ScManO_3$ using total energy calculations. The antiferromagnetic and ferroelectric states have the lowest energy about 100 meV.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.92.2-92.2
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• 2010

Selenium 물질은 지구상에 많은 양이 존재하고, 가격이 저렴하다. 그 성질은 분광감도가 시감도에 잘 일치하고, 광학적 특성이 뛰어나서 태양전지로 연구도 활발히 진행 중이다. 본 연구에서는 Se박막을 열저항증착방법을 이용하여 증착시, 기판온도를 변화를 시켜 그 구조적특성의 변화를 관찰하였다. $50^{\circ}C$에서 변화를 시작하여 $70^{\circ}C$, $100^{\circ}C$의 변화에서 각각 단사정계, 육방정계 결정구조가 나타났다. XRD 분석결과 $100^{\circ}C$에서 증착한 sample의 회절강도가 $70^{\circ}C$에서 증착한 sample보다 작은회절강도를 나타내었다. 추후 열처리공정등을 통하여 보완하면, CISe 박막 화합물 태양전지 연구에 큰 효과를 나타낼 수 있을 것으로 예상된다.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.445-449
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• 1996

Structural and optical characteristics in Se thin film fabricated by EBE method had been studied. Se thin film was deposited with noncrystalline until substrate temperature of >$100^{\circ}C$ Color of its surface had red genealogy, and its optical energy band gap was about 2.45 eV. But Se film was grown with monoclinic at substrate temperature of over >$150^{\circ}C$ Also, color of its surface had gray genealogy, and its optical energy band gap was about 2.31 eV. Finally, after heat-treatment at >$150^{\circ}C$ for 15 min with substrate temperature of >$100^{\circ}C$ noncrystalline Se was proved to be hexagonal, and color of its surface had dark gray genealogy, and its optical energy band gap was about 2.06 eV. From the results, it was known that Se thin film for photoelectric device with the lowest optical energy band gap was accepted from hexagonal structure.