• Korean Journal of Materials Research
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• v.11 no.1
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• pp.44-47
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• 2001

Effects of $Er_2O_3$ addition on the dielectric properties of non-reducible $BaTi_3$-based X7R dielectrics with Ni electrode have been studied in reducing atmosphere. X7R with moderate temperature-dependence was developed after addition of $Er_2O_3$ with $MnO_2-MgO$; room-temperature dielectric constant and dissipation factor were >2900 and < 1.0%, respectively. The addition of $Er_2O_3$ greater than 3.0 mol% improved the temperature dependence of dielectric properties, but a significant decrease of the dielectric constant at room-temperature was observed. The TCC curves rebated clockwise with increasing MnO$_2$ content at a given additive system, 1.5 mol% $Er_2O_3$ and 2.0 mol% MgO.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.6
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• pp.1283-1288
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• 2015

In general, IC chip circuit which is operating a cryptographic computation tends to radiate stronger electromagnetic signal to the outside. By using a power detecter such as a loop antenna near cryptographic device, the encryption key can be identified by probing a electromagnetic signal. To implement a method against non-invasive type attack, multi dielectric slab structure on IC chip to suppress radiated electromagnetic signal was introduced. Multiple dielectric slab was implemented by suitably configured to have the Bragg reflection characteristics, and then the reflection response was computed and verified its effectiveness. As a result, the thickness of the dielectric coating was 2mm and the reflection response characteristics for the vertical incidence was achieved to be 91% level.

• ETRI Journal
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• v.13 no.2
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• pp.42-53
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• 1991

고유전율 적충세라믹 커패시터 소재인 $BaTiO_3$ 자기물은 일반적으로 큐리오도인 약 $120^{\circ}C$부근에서 유전율이 최고 약 10,000정도로 증가한 다음 급격히 감소하므로 적절한 이동체를 첨가하여 큐리온도를 상온으로 이동시켜 상온에서 최대 유전율을 이용하여야 한다. 그리고$BaTiO_3$ 자기물은 $1300^{\circ}C$이상의 고온소결시 고가인 Pd전극이 요구된다. 그러나 자기물의 소결온도를 저온화화면 저가의 Ag합금으로 전극재료를 대체할 수 있다. 본 연구에서는 이동제로서 $CaSnO_3$ 를 이용하여 큐리온도를 상온으로 이동시켰다. 또한 소결온도를 저온화하기 위하여 $BaTiO_3$ 세라믹에 여러가지 산화물을 첨가하여 소결현상을 살펴보았다. 실험결과 첨가제를 넣지 않은 경우 소결온도는 $1350^{\circ}C$의 고온이 필요한 반면, $CuO,B_2O_3$는 $1050^{\circ}C$의 낮은 온도에서도 치밀화와 입도성장이 잘 일어났다. 특히 $B_2$$O_3$ 를 첨가한 경우는 $1250^{\circ}C$이상에서 소결할 때 절연저항이 낮아 유전손실이 큰 문제점을 보였지만, 최대 유전율이 11,000 정도로 높고, 양호한 유전율의 온도변화 특성을 나타내어 우수한 고유전율 소재의 첨가제로 응용될 가능성을 보였다

• Journal of Soil and Groundwater Environment
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• v.9 no.3
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• pp.1-11
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• 2004

To evaluate the applicability of dielectric constant measurement method on the geoenvironmental investigation of subsurface contaminated by landfill leachate, the analysis on dielectric characteristics of sand containing contaminated pore water by landfill leachate was performed. The separate real and imaginary parts of dielectric constant were investigated in the frequency range of 75kHz to 12MHz. The real part of dielectric constant increased at the lower frequency wherea the real part of dielectric constant decreased at the higher frequency as the concentration of leachate increased. These results can be explained by the frequency dependence of space charge polarization and orientation polarization. The imaginary part of dielectric constant on the contaminated sand with leachate increased with their concentration for whole frequency range. These results are caused by the increase of energy loss due to the enhancement of conduction in soil with leachate concentration. The results in this study indicate that the dielectric constant measurement method has potential in evaluating the contaminated soil and pore water by landfill leachate.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.380-383
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• 2002

본 논문에서는 20㎓~50㎓ 대역에서 2 차원 PBG(Photonic-Bandgap) 구조의 투과 특성을 RCWA(Rigorous coupled-wave analysis)방법에 의한 Transfer matrix로 해석하였다. Square lattice의 PBG 구조에 대하여 TE 편파에서 유전율의 변화와 결함(defect)의 유무에 대한 투과 특성을 고찰하였다.

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.783-787
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• 2004

Microwave dielectric properties and the microstructure of $Ba_5Nb_4O_{15}$ ceramics with $PbO-B_2O_3-SiO_2$ glass frit were investigated to reduce the sintering temperature of $Ba_5Nb_4O_{15}$ ceramics as a function of the amount of glass frit from $0.5wt\%$ to $10wt\%$ and the sintering condition. The sintered density and the microwave dielectric properties of $Ba_5Nb_4O_{15}$ ceramics were remarkably changed with the amount of glass fit which existed as a liquid phase and assisted the densification. $Ba_5Nb_4O_{15}$ with $3wt\%$ $PbO-B_2O_3-SiO_2$ glass frit sintered at $900^{\circ}C$ for 2 h showed dielectric constant (K) of 41.4, a quality factor (Q $\times$f) of 13,485 GHz, and a Temperature Coefficient of resonant Frequency (TCF) of 9 ppm/$^{\circ}C$. Due to no trace of physical and chemical reaction between this composition and Ag electrode cofired at $900^{\circ}C$ for 2 h, this ceramics can be a good candidate for the multilayer dielectric filter.

• Journal of the Korean Academy of Child and Adolescent Psychiatry
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• v.12 no.2
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• pp.179-191
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• 2001

Objectives：This study evaluated the association between behavioral characteristics and polymorphisms in DAT1, DRD2, DRD3, and DRD4 genes. Methods：The subjects were 114 neonates, who were born by normal spontaneous vaginal delivery and had no physical problems. The behavioral characteristics were evaluated using Neonatal Behavioral Assessment Scale(NBAS) at $17.8{\pm}7.0$ hours after their birth to minimize environmental influences, and cord blood was used to analyze the gene polymorphisms. Results：In comparison to DAT1 gene 10/10 genotype group(N=93), other genotype group(N=19) showed significantly high NBAS scores on social-interaction, state organization, and state regulation. DRD2 gene Ser311/Cys311, TaqI A, and TaqI B polymorphisms showed no significant differences on NBAS scores when they were grouped by genotypes. DRD3 gene polymorphism and DRD4 gene promotor polymorphism showed no significant difference on NBAS scores when they were grouped by genotypes. In comparison to the short repeats(N=102), long repeats(N=10) in DRD4 gene showed significantly high habituation score of NBAS. Conclusion：These results suggest that the genetic effects of the neonatal behavioral characteristics may be mediated via DAT1 and DRD4 genes.

• Proceedings of the Plant Resources Society of Korea Conference
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• 2020.08a
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• pp.39-39
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• 2020

호박(Cucurbita spp.)은 박과 호박속 식물로 원산지는 열대 남아메리카로 추정되며 1년생 혹은 다년생 초본으로서 우리나라를 포함한 전 세계에서 널리 분포하고 있다. 호박은 비타민A와 비타민C가 풍부하고 이뇨작용 효과가 탁월해 피부를 좋게 하고 부기를 빼주는 것으로 보고되고 있다. 본 연구에서는 농업유전자원센터에서 보유한 호박속 자원의 내력과 형태적인 특성을 그룹화하여 자원 활용을 위한 기초자료를 제공하고자 하였다. 농업유전자원센터에서 보유한 호박속 등록자원은 총 5종(C.pepo, C. moschata, C.maxima, C.argyrosperma, C .ficifolia) 1,640자원으로 주요 원산지는 한국 589자원(35.9%), 미국 122자원(7.4%), 러시아 79자원(4.8%), 멕시코 49자원(4.2%), 터키 56자원(3.4%)이었으며 국내 원산의 경우 강원도에서 수집된 자원이 66자원으로 가장 많았다. 전체 1,640 자원 중 재래종은 733자원(44.7%)을 차지하였으며 다음으로는 육성품종이 133자원(8%)으로 많았다. 생장형이 조사 된 301자원 대부분이 덩굴성이며 준왜성 16자원, 왜성 14자원이 있었다. 호박은 과실 모양과 색, 잎 모양, 줄기 모양 등 생육 특성이 매우 다양하게 조사 되었으며 과경 등 몇 가지 특징은 완벽하지 않지만 종(species)을 구분하는 간이적인 지표로 사용되는 것으로 조사되었다. 흰가루병 저항성 자원은 조사 된 1,170 자원 중 우리나라 재래종인 참호박(IT104575)을 포함한 7자원이 조사되었다. 293개 자원의 과실당도는 2.2~15.4brix까지 다양했으며 당도 12brix 이상 자원은 IT200650을 포함하여 6자원이 조사되었다. 본 연구에서 조사된 호박속 자원의 내력 및 생육 특성은 육종소재의 기초 정보로서 이용되고 있으며 자원 내력정보의 보완, 형질과 기능성 물질 분석 등 추가적인 연구를 통해 연구소재의 기초 정보로서 활용의 가치가 더 커질 것으로 보인다.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.57-63
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• 2003

The effects of glass addition on the low-temperature sintering and microwave dielectric properties of $BaO-Nd_2O_3-TiO_2$ dielectric ceramics were studied. When 10∼13 wt% of lithium borosilicate glass was added, the sintering temperature decreased from 130$0^{\circ}C$to 850-$900^{\circ}C$relative density of more than 97% was obtained. When the sample was sintered at $850^{\circ}C$ with 10 wt% of glass, the dielectric properties of $\epsilon_r{\ge}54$, $Q{\times}f_0{\ge}2300$, and $\tau_f{\ge}+8ppm/^{\circ}C$ were obtained.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.162-166
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• 2000

High quality $Si_3N_4$ metal-insulator-metal (MIM) capacitors were realized by plasma enhanced chemical vapor deposition (PECVD). Titanium nitride (TiN) adapted as a diffusion barrier reduced the interfacial reaction between $Si_3N_4$ dielectric layer and aluminum metal electrode showing neither hillock nor observable precipitate along the interface. The capacitance and the current-voltage characteristics of the MIM capacitors showed that the minimum thickness of $Si_3N_4$ layer should be limited to 500 $\AA$ under the present process, below which most of the capacitors were electrically shorted resulting in the devastation of on-wafer yield. According to the transmission electron microscopy (TEM) on the cross-sectional microstructure of the capacitors, the dielectric breakdown was caused by slit-like voids formed at the interface between TiN and $Si_3N_4$ layers when the thickness of $Si_3N_4$ layer was less than 500 $\AA$. Based on the calculation of thermally-induced residual stress, the formation of voids was understood from the mechanistic point of view.