• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.206-206
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• 2008

압전소자를 이용한 초음파 모터는 전자기적 원리로 동작하는 기존의 모터에 비해 구조가 간단하고 소형, 경량화가 가능하며 저속에서 큰 토크가 가능하고 ${\mu}m$단위 까지 정밀제어가 가능하다는 장점 등으로 인해 그 응용분야가 점차 확대되고 있다. 초음파 모터의 원리는 수평과 수직방향에서 변위가 타원형 운동을 형성하는 것이다. 따라서 선택한 타원운동의 방식에 의해서 모터의 형상이 달라진다. 초음파 모터는 액츄에이터를 사용하여 만들기 때문에 액츄에이터의 특성은 모터의 타원변위나 토크에 영향을 미친다. 단판형 액츄에이터에 비하여 적층 액츄에이터는 입력 임피던스를 낮추어 낮은 구동전압에서 구동이 가능하며 큰 변위와 토크를 발생하기 때문에 진동자의 수명 향상과 구동전압을 낮추기에 적합하다. 적층 액츄에이터는 변위량이나 응력 등을 개선하기 위해서 전기기계 결합계수(kp) 및 압전 d상수가 큰 재료가 요구되며, 고전압에서 장시간 구동 시 마찰에 의한 열손실을 감소시키기 위해 높은 기계적 품질계수(Qm)를 가져야한다. 적층 시 내부전극으로 사용하는 Pd, Pt가 함유된 전극은 가격이 비싸 제조비용을 상승시킨다. 상대적으로 값싼 Ag전극을 사용하면 비용절감을 할 수 있지만 융점이 낮아서 저온소결이 불가피하다. 따라서, 특성이 우수한 적층 액츄에이터를 제조하기 위해서 저손실, 저온소결 할 수 있는 액츄에이터 재료가 필요한 실정이다. L1-B4 혈 선혈 초음파 모터는 L1모드와 B4모드의 공진 주파수가 일치하여야 큰 변위를 얻을 수 있는데 이전의 논문에서 Atila를 이용한 시뮬레이션 결과를 분석한 봐 있다. 적층 액츄에이터의 층수를 5,7,9,11,13,15층으로 하여 L1-B4모드에서의 공진주파수를 비교한 결과 13 층일 때 두 모드가 비슷한 공진주파수를 보였고, 티원변위궤적도 다른 층수에 비해 크게 나타났다. 본 연구에서는 시뮬레이션 결과 가장 좋은 특성을 보인 13층 액츄에이터로 선형 초음파 모터를 제작하였다. 또한, 액츄에이터는 압전 및 유전특성이 우수한 저온소결 PZW-PMN-PZT세라믹을 이용하여 제작하였고, 내부전극으로 Ag전극을 사용하였다. 제작된 13 층 선형초음파모터를 가지고 프리로드 및 전압에 따른 속도를 조사하였고, 시뮬레이션 결과와 비교해 보았다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.589-598
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• 1997

The effects of PT/PZ ratio variations in a modified PZT system on crystal structure and electrical properties were studied. $0.05Pb(Sn_{0.5}Sb_{0.5})O_3＋xPbTiO_3＋yPbZrO_3$＋0.4Wt% $MnO_2$(＝0.55PSS＋0.11PT＋0.84PZ＋0.4wt%$MnO_2$ ; x＋y=0.95) systems with variations of PT/PZ from 0.50/0.45 to 0.l1/0.84 were sintered at $1250^{\circ}C$ for 2 hr, and then sintering density, crystal structure, dielctric, piezoelectric, pyroelectic and voltage responsity to infrared were investigated. Sintering density was increased from 7.52g/$\textrm {cm}^3$ to 7.82g/$\textrm {cm}^3$ with increasing PZ content. Dielectric constants at 1 KHz were decreased from 1147 to 193 with variation of PT/PZ from 0.50/0.45 to 0.l1/0.84 after poling of $4 KV_{DC}$/mm at $140^{\circ}C$ for 20 minutes. All Dielectric losses at 1 KHz were less than 1 % in all specimens. $K_{p}$ was increased near to 1 of PT/PZ, and maximun value of 48.2 % was .at 0.45/0.50. Pyroelectric coefficient of PT/PZ with 0.l1/0.84 was maximun value, 0.0541 C/$\m^2$K, and voltage responsity to infrared was 1.5 V.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.943-948
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• 2003

The microstructure and electrical characteristics of Zn-Pr-Co-Cr-Dy oxides-based varistors were investigated with Dy$_2$ $O_3$ content in the range of 0.0∼2.0 ㏖%. As Dy$_2$ $O_3$ content is increased, the average grain size was decreased in the range of 18.2∼4.6 $\mu\textrm{m}$ and the ceramic density was decreased in the range of 5.49∼4.64 g/㎤. The incorporation of Dy$_2$ $O_3$ markedly enhanced the nonlinear properties of varistors more than 9 times in nonlinear exponent, compared with the varistor without Dy$_2$ $O_3$ The varistor with 0.5∼1.0 ㏖% Dy$_2$ $O_3$ exhibited the high nonlinearity, in which the nonlinear exponent is above 55 and the leakage current is below 1.0 ${\mu}\textrm{A}$. The donor concentration and the density of interface states were decreased in the range of (4.66∼0.25)${\times}$10$\^$18//㎤ and (5.70∼1.39)${\times}$10$\^$12//$\textrm{cm}^2$, respectively, with increasing Dy$_2$ $O_3$ content. The minimum dielectric dissipation factor of 0.0023 was obtained for 0.5 ㏖% Dy$_2$ $O_3$, but further addition of Dy$_2$ $O_3$ increased it.

• The Journal of the Acoustical Society of Korea
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• v.31 no.8
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• pp.514-522
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• 2012

The temperature dependence of the characteristics in a PZT-5 piezoelectric ceramic vibrator with the transverse mode was investigated in the range of $-100^{\circ}C$ to $90^{\circ}C$ using a thermal vacuum chamber to utilize the vibrator in aerospace industries. As the results, at room temperature, the resonant and anti-resonant frequencies had the minimum value, whereas, the dielectric constant increased linearly from about 2500 to 7500 in the given temperature range. The mechanical loss decreased linearly from 0.08 to 0.03. Through the regression analysis, the temperature dependence functions of the characteristics were derived to linear and square regression functions. Applying the functions, the input admittance characteristics of the piezoelectric vibrator were calculated, and the results showed good agreement with measured ones. It can be confirmed that this method is useful to estimate the characteristics change of the piezoelectric vibrator caused by the temperature change under the space environment.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.691-697
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• 2016

In this paper, we propose the antenna to appropriate for a UWB communication system, and it meets characteristics for location recognition in predetermined range. Proposed tapered slot antenna was designed through the HFSS simulation tool of Ansys. Inc., it was produced by Taconic TRF-45 based on dielectric constant of 4.5, loss tangent 0.0035, thickness 1.62mm. The tapered slot antenna is analyzed the standing wave ratio and reflection coefficient, radiation pattern in the frequency domain. The impedance bandwidth range of the produced tapered slot antenna is from 3.8 ~ 8.9GHz to 5.1GHz, E-plane and H-plane radiation pattern meet directional antenna characteristics for indoor and outdoor location recognition in predetermined range. The antenna gain is 7.4 dBi(6GHz)in the simulation, the result of measurement demonstrated 7.4 dBi(6 GHz) of antenna maximum gain. Proposed tapered slot antenna meets UWB communication system but simulated and measured results were slightly different.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.4
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• pp.387-392
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• 2014

In this paper, the broadband antenna design, which can be applied to USB Dongle, supporting Wibro(2.3~2.4 GHz), Wi-Fi(2.4~2.5 GHz) and LTE7(2.5~2.7 GHz) is proposed technique. The proposed antenna was designed similar to PIFA type antennas. Reactive elements were used to control the input impedance and wideband characteristics were achieved by controlling coupling between the feed structure and the radiator. As a result, the antenna printed on FR-4 PCB(${\epsilon}_r$ =4.4, tan ${\delta}$=0.02) occupying an area of $15{\times}5mm^2$ was able to achieve bandwidth of 1 GHz from 2.1 to 3.1 GHz under VSWR=2. Measured return loss characteristics, bandwidth and radiation patterns were in good agreement with the simulated results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.10
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• pp.996-1003
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• 2003

There are critical drawbacks in fabricating MMIC transversal filters because the length of the conventional transversal filter structure is much longer than the width. In order to solve this structural problem, a transversal filter using multiple-coupled-line directional couplers which can achieve tight coupling is proposed. The length of the proposed transversal filter can be made short using multiple-coupled-line couplers so that the structure of the proposed filter is applicable to MMIC technology. Because of the dielectric and conductor losses, the excited signal at the input port becomes smaller when it progresses through each directional coupler. Therefore, the strength of the coupled signals at the latter directional couplers becomes smaller than the designed one and this, in turn, gives rise to performance aggravation. A modified coupling coefficient formula to prevent frequency characteristic degradation is introduced. The proposed filter structure and the design method are verified by the calculated result and 3D full-wave analysis.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.6
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• pp.37-43
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• 2017

This review investigates the basic principle of physical interactions and failure mechanisms introduced in the materials and inner parts of semiconducting components under electromagnetic pulses (EMPs). The transfer process of EMPs at the semiconducting component level can be explained based on three layer structures (air, dielectric, and conductor layers). The theoretically absorbed energy can be predicted by the complex reflection coefficient. The main failure mechanisms of semiconductor components are also described based on the Joule heating energy generated by the coupling between materials and the applied EMPs. Breakdown of the P-N junction, burnout of the circuit pattern in the semiconductor chip, and damage to connecting wires between the lead frame and semiconducting chips can result from dielectric heating and eddy current loss due to electric and magnetic fields. To summarize, the EMPs transferred to the semiconductor components interact with the chip material in a semiconductor, and dipolar polarization and ionic conduction happen at the same time. Destruction of the P-N junction can result from excessive reverse voltage. Further EMP research at the semiconducting component level is needed to improve the reliability and susceptibility of electric and electronic systems.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1146-1151
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• 1998

The crystallization behaviour of perovskite $PbTiO_3$ for the samples heat- treated at various temperatures for various times in the $PbO-TiO_2-A1_2O_3-SiO_2$, glass system has been investigated by the means of X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses. Higher crystallinity obtained in the sample heat-treated at higher temperature for longer time. With increasing heat-treatment time, dielectric constant of the samples heat-treated at $610^{\circ}C$ and $650^{\circ}C$ increased, but that of the sample heat- treated at $800^{\circ}C$ decreased. Loss tangent of the heat-treated samples was not much influenced by heat-treatment conditions. Piezodielectric charge constant was approximately $1.0\times10^{-12}~8.0$\times$10^{-12}C/N$ in the samples heat-treated at $800^{\circ}C$ for 1h, 2h, and 8h.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.7
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• pp.3169-3175
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• 2011

This paper describes the design of size-reduced directional coupler using the artificial dielectric substrate and its increased effective permittivity. Directional couplers are widely used in measuring RF power indirectly and coupling signal power. Artificial dielectric substrates have higher effective dielectric constant than standard dielectric substrate due to the lots of metalized via-holes, and the increased effective permittivity results in size-reduction of circuits. As a design example, 15dB directional couplers are designed on the standard substrate and artificial dielectric substrate and their size are compared. The size of the directional coupler using the artificial dielectric substrate is only 1/3 of that designed using the standard substrate, while the performances are preserved. In addition, the measured performances of the size-reduced coupler are well agreed with the simulated ones. The measured coupling coefficient, matching, and insertion loss at 2GHz are -14.62dB, -24.1dB, and -0.38dB, respectively.