• Journal of Korean Society of Environmental Engineers
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• v.31 no.9
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• pp.793-802
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• 2009

Adsorption properties were estimated for the organic silicon compounds (siloxanes) in an actual landfill gas (LFG) using adsorbents such as coconut activated carbon, coal activated carbon, silica gel, sulfur adsorbent, carbonized sludge, and molecular sieve 13X. Coconut activated carbon showed the highest removal efficiency of more than 95%. The desorption of hexamethyldisiloxane (L2) from the adsorbent, however, resulted in the remarkable concentration variation of the compound in the treated gas. Silica gel, which had high adsorption capacity for L2 in single substance adsorption experiment in the other study, could not remove the component in the actual landfill gas while it adsorbed well octamethylcyclotetrasiloxane (D4) and decamethylcyclopentasiloxane (D5) in the LFG. Therefore the elimination of hexamethyldisiloxane is an important factor to determine the level of total organosilicon compound in pretreated landfill gas. Moreover, the L2 from the actual landfill gas was effectively adsorbed by the serial adsorption test using two columns packed with coconut activated carbon which has the great capacity of siloxanes removal among others. In order to utilize efficiently LFG as a renewable energy, the emission and adsorptive characteristics of the substance to be treated should be considered for the organization, operation, and management of pretreatment process.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.79-79
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• 2000

탄화규소는 그 전기적, 열적 기계적 안정성 때문에 새로운 반도체 재료로서 주목받고 있는 물질이다. 탄화규소를 이용하여 전자소자를 제조하기 위해서는 ohmic 접촉과 Schottky 접촉을 형성하는 전극물질의 개발이 선행되어야 하며, 고온, 고주파, 고출력용 반도체 소자를 제조하기 위해서는 전극의 고온 안정성 확보가 필수적이다. 따라서 탄화규소 소자의 응용범위는 전극에 의해서 제한된다고 할 수 있다. 일반적으로 전극을 증착한 후 원하는 접촉 특성을 얻기 위해서는 열처리 과정을 거쳐야 하며 접촉의 특성이 열처리에 의해 영향을 받는 것으로 알려져 있다. 따라서 본 연구에서는 열처리가 금속/탄화규소 접촉의 특성에 미치는 영향을 알아보고자 하였으며, 이를 바탕으로 우수한 Schottky 다이오드의 제작 가능성을 타진해보고자 하였다. 유기실리콘 화합물 원료인 TEMSM(bis-trimethysilylmethane)을 사용하여 실리콘 기판위에 단결정 $eta$-Sic 박막을 증착하였다. 기판의 영향을 줄이기 위하여 $\beta$-Sic 박막의 두께가 $1.5mu extrm{m}$ 이상인 시편을 사용하였다. 전극으로는 Pt를 사용하였으며, 전극 증착은 DC magnetron sputter를 이용하였다. 전기적인 특성을 분석하기 위하여 전류-전압, 커패시턴스-전압 특성을 분석하였고, XRD와 AES를 이용하여 계면에서의 반응을 알아보았다. Hall 측정 결과 모든 $\beta$-Sic 박막은 약 2$\times$1018cm-3 정도의 도핑 농도를 갖는 n형 탄화규소임을 확인하였다. Pt/$\beta$-Sic 접촉은 열처리 전에는 ohmic 접촉 특성을 보였으나 열처리 후에는 Schottky 접촉의 특성을 나타냈다. 전기적 특성 분석을 통하여 열처리 온도가 증가할수록 에너지 장벽의 높이가 증가하는 것을 알 수 있었다. 이상적인 Pt/$\beta$-Sic 접촉의 특성을 보이는 것은 전극 증착시 sputtering에 의하여 계면에 발생한 결함이 도너의 역할을 하여 에너지 장벽의 두께를 감소시켜 tunneling을 촉진하기 때문인 것으로 판단된다. 열처리 후 접촉 특성이 변화하는 것은 이러한 결함들의 소멸 때문으로 생각된다. AES 분석을 통하여 열처리시 Pt가 $\beta$-Sic 내부로 확산하는 것을 알 수 있었으며, 이 때 Pt가 $\beta$-Sic 와 반응하여 계면에 실리사이드가 형성됨으로써 Pt/$\beta$-Sic 계면이 보다 안정한 탄화규소 박막 내부로 이동하게 되고 계면의 결함 농도가 줄어드는 것이 접촉 특성 변화의 원인이라 할 수 있다. 열처리 온도가 증가함에 따라 계면이 점점 $\beta$-Sic 내부로 이동하여 결함농도가 낮아지기 때문에 tunneling 효과가 감소하여 에너지 장벽이 높아지게 된다. Pt를 ohmic 접촉과 Schottky 접촉 전극물질로 이용하여 제작한 Schottky 다이오드는 ohmic 접촉 형성시 Schottky 접촉에 발생하는 wputtering 손상에 의하여 좋은 정류특성을 얻지 못하였다. 따라서 chmic 접촉 전에 Schottky 접촉의 passivation이 필요한 것으로 판단된다.

• Journal of the Korean Chemical Society
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• v.38 no.1
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• pp.55-60
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• 1994

Molecular orbital calculations at the extended Huckel level have been carried out for $Cp_2TiSiHPh(1),\;[Cp_2Ti]_2[{\mu}-HSi(HPh)][{\mu}-H] (2),\;and\;[Cp_2TiSiH_2Ph]_2$ (3) complexes which are important intermediates in organosilane polymerization. Stable geometry of complex 1 is not $C_{2V}$, but Cs symmetry and the rotational energy barrier of $SiH_2$ unit is computed to be 14 kcal/mol. The orbital interaction diagrams are studied to characterize the chemical bonding for the electron deficient systems, 2 and 3. It is possible for Si-H to be coordinated to the Ti metal using $\sigma$ bonding.

• Journal of the Korea Organic Resources Recycling Association
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• v.19 no.3
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• pp.44-53
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• 2011

Siloxane, organo-silicon compound, is used in the various forms of products such as cosmetics and detergents due to its quality physical chemistry attributes. Siloxane included in landfill gas which is caused in the process of decomposing of such products after landfill has imposed negative impacts on the operation of landfill gas utility facilities. The objective of this study was to investigate the siloxane production characteristics depending on the features of various landfill site in Korea so that the analysis was made on the landfilling age and landfill waste by in terms of its concentration, structure and composition. As for the concentration of siloxane depending on time passage, 12 landfill sites were reviewed by landfilling age. As for production attributes change of siloxane by landfill wastes, the source of wastes, physical production ration and siloxane concentration were compared in 6 landfills. The average concentration of total-siloxane within LFG is $6.75mg/m^3$ and cyclic-siloxane out of it occupies over 93%. By element, D4 and D5 in order take the highest proportion regardless of total-siloxane concentration and landfilling age. Even though this study is not able to verify the different impact of each kind of wastes on the generation of siloxane, it is confirmed that total-siloxane and cyclic-siloxane decrease in line with the increase of landfilling age as it does in the first order decay model for landfill gas.

• Journal of the Korea Organic Resources Recycling Association
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• v.19 no.4
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• pp.60-65
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• 2011

Siloxane is an organic silicon compound and is volatilized into the bio gas from anaerobic digestion. It causes failure of gas combustion engines using the bio gas. Siloxane emission characteristics should be identified to provide a proper siloxane control. This study focuses on characterizing siloxane emission in bio gas from an anaerobic digester of food wastewater operating from January to March. The concentrations of total average siloxane and cycle-siloxane D4 were detected to be 9.5 and $4.0mg\;siloxane/m^3$, respectively. The concentrations of cycle-siloxane and linear-siloxane were resulted in D4>D5>D6 and L4>L3>L5>L2, respectively. The total siloxane concentration was the lowest in January and the highest in March.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.21-28
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• 2000

Refractory metals, W and Ti, and their nitrides, $W_2N$ and TiN, were investigated for using as an ohmic contact material with SiC single crystalline thin films. The possibility of nitride materials for using as a stable ohmic contact material of SiC at high temperatures was examined by considering the thermal stability depending on the heat treatment temperature, their electrical properties and protective behavior from the interdiffusion. W contact with SiC thin films, deposited by using new organosilicon precursor, bis-trimethylsilylmethane, showed the lowest resistivity, $2.17{\times}10^{-5}$Ω$\textrm{cm}^2$. On the other hand, Ti-based contact materials showed higher contact resistivity than W-based ones. The oxidation of contact materials was restricted by applying Pt thin films on those electrodes. Nitride electrodes had rather stable electrical properties and better protective behavior from interdiffusion than metal electrodes.