• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.404-404
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• 2012

저차원계 탄소 동소체는 특유의 구조에서 기인하는 우수한 물리적 성질로 인해 각광받고 있는 물질이다. 탄소원자가 육각형 격자 모양을 지닌 2차원계 물질인 그래핀(graphene)은 뛰어난 전기적, 물리적, 광학적 성질로 인해 전계효과 트랜지스터(field effect transistors), 투명전극(transparent electrodes), 에너지 저장체, 복합체, 화학/바이오 센서 등 다양한 분야에서 활용을 위한 연구가 진행되고 있다. 또한 그래핀이 튜브형태로 말려있는 1차원계 물질인 탄소나노튜브(carbon nanotube)의 전기적, 열적, 기계적 성질은 이를 전계방출 디스플레이(field emission display), 전도성 플라스틱, 가스 저장체, 슈퍼 커패시터 등에 적용가능하게 한다. 최근 2차원계 물질인 그래핀과 1차원계 물질인 탄소나노튜브의 장점을 극대화하기 위한 복합 나노 구조에 대한 다양한 연구가 진행되고 있는 추세이다[1-5]. 본 연구에서 그래핀-탄소나노튜브 혼성 구조의 제작은 다음과 같이 진행되었다. 우선 열 화학기상증착법(thermal chemical vapor deposition)을 이용하여 그래핀을 합성하였다. 합성된 그래핀은 메타크릴산메탈 수지(polymetylmethacrylate; PMMA)를 이용한 전사(transfer)방법을 이용하여 원하는 기판에 위치시키고, 직류 마그네트론 스퍼터링(DC magnetron sputtering)을 이용하여 탄소나노튜브의 합성을 위한 촉매층을 증착하였다. 이후 열 화학기상증착법을 이용하여 그래핀 위에 탄소나노튜브를 합성함으로써 그래핀-탄소나노튜브 혼성 구조를 제작하였다. 합성된 그래핀-탄소나노튜브의 구조적 특징은 주사 전자 현미경(scanning electron microscopy)을 통해 확인하였고, 촉매의 표면 형상 및 화학적 상태는 원자힘 현미경(atomic force microscopy)과 X선 광전자 분광법(X-ray photoelectron spectroscopy)을 통해 확인하였다. 또한 제작된 그래핀-탄소나노튜브의 전기적 특성 측정을 통해 나노전자소자로의 응용가능성을 조사하였다.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.10
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• pp.41-47
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• 2008

This study aims to obtain machining characteristics during AFM (Atomic force Microscope) machining of silicon wafers and to monitor the machining states using acoustic emission. As in micro scale machining, two distinct regimes of deformation, i. e. ploughing regime and cutting regime were observed. First, the transition between the two regimes are investigated by analyzing the "pile-up" during machining. As far as in process monitoring is concerned, in the ploughing repime, no chips have been formed and related AE RMS values are relatively low, In the mean time, in the cutting regime, the RMS values are significantly higher than the ploughing regime, with apparent chip formation. From the results, we found out that the proposed scheme can be used for the monitoring of nanomachining, especially for the characterization of nanocutting mode transition.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.2
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• pp.218-223
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• 2004

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of crystalline sapphire wafer at surface has a full width at half maximum of 250 arcsec. This value at the surface sapphire wafer surfaces indicated 0.12${mu}m$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. As a result, the value of surface roughness of sapphire wafers measured by AFM(Atom Force Microscope) was 2.1nm.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2003.04a
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• pp.50-55
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• 2003

Atomic force microscope(AFM) techniques are increasingly used for tribological studies of engineering surfaces at scales ranging from atomic and molecular to microscale. AFM with suitable tips is being used for nanofabrication nanomachining purposes. In this paper, machining characteristics of silicon have been investigated by nano indentation and nano scratch. Mechanisms of material removal on the microscale are studied and the Taguchi method is introduced to acquire optimum parameters for nanomachining. This work shows effectiveness of the Taguchi method in nanomachining. Also, Acoustic Emission(AE) is introduced for the monitoring of nanomachining.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.294-297
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• 2012

In this work, local oxidation behavior in phosphorous ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (AFM-LO) has been performed on the implanted samples, with and without activation anneal, using an applied bias (~25 V). It has been clearly shown that the post-implantation annealing process at $1,650^{\circ}C$ has a great impact on the local oxidation rate by electrically activating the dopants and by modulating the surface roughness. In addition, the composition of resulting oxides changes depending on the doping level of SiC surfaces.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.111-116
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• 2015

우리는 딥펜나노리소그래피에서 일어나는 박막 성장에 관한 잉크 확산 모형을 랜덤 워크 방법을 사용해 구현하였다. 분자동역학 연구를 바탕으로 제안된 hopping down, serial pushing, 단일 밀림 길이를 고려한 모형에 따른 박막 성장 특성을 비교하였다. 모형에 따라 그 박막 성장 특성에 확연한 차이가 있음을 발견하였으며, 잉크 분자와 기판 사이의 결합력이 중요한 변수임을 확인할 수 있었다. 그리고 원자힘현미경 탐침에서 떨어지는 잉크 분자의 속도와 단일 밀림 길이에 따른 박막 성장 차이를 알아보았다. 단일 밀림 길이가 커질수록, 탐침에서 떨어지는 잉크 분자의 속도가 빨라질수록 가지 모양의 박막이 형성됨을 알 수 있었다.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2005.05a
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• pp.413-418
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• 2005

This paper proposes a measurement method for the surface of micro-parts by using AFM(Atomic Force Microscope). To this end, two techniques are presented to extend the capacity of AFM. First, the measurement range is extended by using an image matching method based on correlation coefficients. To account for the inaccuracy of the coarse stage implemented in AFM's, the image matching technique is applied to two neighboring images intentionally overlapped with each other. Second, a method to measure the shape of relatively large specimen is presented by using the inherent trigger mechanism due to the atomic force. The proposed method is proved effective through a series of experiments.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.5
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• pp.350-355
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• 2000

The fabrication of sapphire wafer in C plane has been developed by horizontal Bridgeman method and GaN based semiconductor epitaxial growth has been carried out in metal organic chemical vapour deposition. The single crystalline ingot of sapphire has been utilized for 2 inch sapphire wafers and wafer slicing and lapping machines were designed. These several steps of lapping processes provided the mirror-like surface of sapphire wafer. The measurements of the surface flatness and the roughness were carried out by the atomic force microscope. The GaN thin film growth on the developed wafer was confirmed the wafer quality and applicability to blue light emitting devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.101-104
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• 2004

We have fabricated a channel of superconducting flux flow transistor(SFFT) using the voltage-biased atomic force microscope(AFM) TiO tip and performed numerical simulations for the SFFT controlled by the magnetic field with a control current. The critical current density in a channel of the fabricated SFFT was decreased with the applied current by a control line. By comparing the measured with theoretical results, we showed a possibility of fabrication of an SFFT with a nano-channel using AFM anodization process technique.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.3
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• pp.163-170
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• 2004

Atomic force microscope (AFM) techniques are increasingly used fur tribological studies of engineering surfaces at scales ranging from atomic and molecular to micro-scale. Recently, AFM with suitable tips is being used for nano fabrication/nano machining purposes. In this paper, machining characteristics of silicon were investigated by nano indentation and nano scratch. Nano-scale material removal mechanisms are studied and the Taguchi method was introduced to acquire optimum parameters for nano machining. Also, Acoustic Emission (AR) is used for the monitoring of nano machining.