• Title/Summary/Keyword: 와이어전극

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Thermal Stress Induced Spalling of Metal Pad on Silicon Interposer (열응력에 의한 실리콘 인터포저 위 금속 패드의 박락 현상)

  • Kim, Junmo;Kim, Boyeon;Jung, Cheong-Ha;Kim, Gu-sung;Kim, Taek-Soo
    • Journal of the Microelectronics and Packaging Society
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    • v.29 no.3
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    • pp.25-29
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    • 2022
  • Recently, the importance of electronic packaging technology has been attracting attention, and heterogeneous integration technology in which chips are stacked out-of-plane direction is being applied to the electronic packaging field. The 2.5D integration circuit is a technology for stacking chips using an interposer including TSV, and is widely used already. Therefore, it is necessary to make the interposer mechanically reliable in the packaging process that undergoes various thermal processes and mechanical loadings. Considering the structural characteristics of the interposer on which several thin films are deposited, thermal stress due to the difference in thermal expansion coefficients of materials can have a great effect on reliability. In this study, the mechanical reliability of the metal pad for wire bonding on the silicon interposer against thermal stress was evaluated. After heating the interposer to the solder reflow temperature, the delamination of the metal pad that occurred during cooling was observed and the mechanism was investigated. In addition, it was confirmed that the high cooling rate and the defect caused by handling promote delamination of the metal pads.