• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.1
• /
• pp.57-65
• /
• 2017

The electronic components in mobile device are composed of electronic chips and various other materials. These components become extremely thin and the constituent materials have different coefficient of thermal expansion, so that considerable warpages occurs easily due to temperature change or external load. Shadow $moir{\acute{e}}$ is non-contact, whole field technique for measuring out-of-plane displacement, but the measurement sensitivity is not less than $50{\mu}m/fringe$, which is not suitable for measuring the warpage of the electronic components. In this paper, we implemented a measurement method with enhanced sensitivity of $25{\mu}m/fringe$ by investigating and optimizing various experimental conditions of the shadow $moir{\acute{e}}$. In addition, four $moir{\acute{e}}$ fringe patterns recorded by the phase shift are processes to obtain a $moir{\acute{e}}$ fringe patterns with a sensitivity four times higher. The measurement technique is applied to small electronic components of a smart phone for measuring warpage with a high sensitivity of $5{\mu}m/fringe$ at room temperature and at the temperature of $100^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.21 no.1
• /
• pp.8-13
• /
• 2020

Stress is the main cause of warpage failure of very thin substrates with thickness of several hundred ㎛, such as IC packages. Stress usually results from differences in crystal structures and corresponding thermal expansion coefficients when depositing different substances on a substrate. In this study, the behaviors of stress occurring in substrates were numerically analyzed by the thin-film pattern of the rectangles stacked on the substrates. First, the substrate displacement was obtained and the substrate strain and stress were obtained using it. When the tensile force is concentrated at the edge of the thin film pattern, normal and shear stresses are generated around the edge of the thin film pattern. Normal stress occurs near the edges of the thin film pattern and the vertexes. Shear stress also occurs around the edge of the thin film pattern, but unlike normal stress, it does not appear near the vertexes. It was also confirmed that the magnitude and direction of shear stress are changed around the edge. When edge forces of thin-film pattern are equal, the normal stress was about 10 times larger than the shear stress. This indicates that normal stress is the biggest cause of warpage failure.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.327-327
• /
• 2012

사파이어는 우수한 광학적, 물리적, 화학적 특성을 가지고 있는 물질 중의 하나이며, 청색 발광특성을 나타내는 GaN와 격자상수, 열팽창 계수가 가장 유사할 뿐만 아니라 가격도 상대적으로 저렴하기 때문에 GaN 성장을 위한 기판으로 사용될 수 있다. 실제로 사파이어는 프로젝터와 전자파 장치, 군사용 장비 등 다양한 분야에 응용되고 있으며, 발광 다이오드(LED)를 위한 기판으로 활용됨으로써 그 수요가 급격히 증가하고 있다. 그러나 사파이어 결정의 성장 중에 생길 수 있는 전위(dislocation)와 적층결함(stacking fault) 등의 결정 결함들은 결정 내에 존재하여 역학적, 전기적 성질에 큰 영향을 미칠 수 있다. 특히 사파이어가 청색 발광소자의 기판으로 사용되는 경우, 사파이어 기판 내부의 결정 결함은 증착되는 박막 특성에 영향을 미치게 된다. 따라서 사파이어의 보다 나은 응용을 위해서는 결정 결함에 대한 평가기술과 결함의 형성 메커니즘 등에 대한 이해가 필요하다. 특히, 결함의 정량적 평가 기술의 개발은 사파이어의 상용화에 중요한 핵심요소 중 하나이다. 결정을 산이나 염기 등을 이용하여 화학적 식각을 하게 되면 분자나 원자 간의 결합이 약한 부분이나 높은 에너지 상태에 있는 부분부터 반응을 하게 되는데, 이러한 반응을 통해 결정의 표면에 형성되는 것을 에치 피트(etch pit)라고 한다. 일반적으로 결정 내에 존재하는 전위는 높은 에너지 상태이므로, 이러한 에치 피트는 전위와 관련되어 있다. 따라서 사파이어 결정과 같은 결정질 물질은 표면의 식각을 통하여 관찰되는 에치 피트 등의 형상이나 반응성 등을 평가하여 결정 특성을 연구할 수 있다. 본 연구는 화학적 식각법으로 사파이어 결정의 특성을 평가하기 위하여 진행하였다. 사파이어 결정의 식각을 위하여 다양한 산-염기 용액들이 사용되었다. 식각 용액의 종류에 따른 사파이어 결정의 식각거동을 연구하고, 표면에 나타나는 형상을 연구하여 사파이어 결정의 구조적 특성을 파악하였다. 특히, 에치 피트 형성거동의 시간 및 온도 의존성에 관한 연구를 진행하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.411-412
• /
• 2012

대부분의 상용 LED는 사파이어기판에 성장된 GaN를 기반으로 사용한다. GaN는 $1,000^{\circ}C$ 이상의 높은 온도에서 성장이 이루어지는데 이 경우 GaN과 사파이어 기판과의 높은 열팽창 계수로 인하여 compressive stress를 받게 된다. 이 compressive stress로 인하여 성장된 GaN wafer에 bowing이 일어나게 되고 이는 기판의 대면적화에 커다란 문제로 작용한다. 이런 문제들을 해결하기 위해 여러 방법이 고안되고 있지만 [1,2], 근본적으로 wafer bowing 문제의 해결은 이루어지고 있지 않다. 한편, 일반적으로 박막을 성장할 때 columnar structure를 가지는 박막이 coalescence되면 박막에 tensile stress가 걸린다는 사실이 알려져 있으며 [3], GaN를 저온에서 성장할 경우 columnar structure를 갖는다는 사실이 보고되었다 [4]. 본 연구에서는 이런columnar structure를 갖는 GaN을 이용하여 wafer bowing 문제가 해결된 GaN 박막 성장을 연구하였다. 본 실험에서는, c-plane 사파이어에 유기금속화학증착법(MOCVD)을 이용하여 nano-columnar structure를 갖는 저온 GaN layer을 성장하였다. 그 후 columnar structure를 유지하면서 $1,040^{\circ}C$까지 annealing한 후 고온에서 flat 한 GaN 박막을 nano-columnar structure GaN layer위에 성장 하였다. 우선 저온 GaN layer가 nano-columnar structure를 갖고, 고온에서도 nano-columnar structure가 유지되는 것을 scanning electron microscopy (SEM)과 transmission electron microcopy (TEM)을 통해 확인하였다. 또한 이런 columnar structure 위에 고온에서 성장시킨 flat한 GaN 박막이 성장된 것을 관찰할 수 있었다. 성장된 GaN박막의 wafer bowing 정도를 측정한 결과, columnar structure를 갖고 있는 고온 GaN 박막이 일반적인 GaN에 비해 확연하게 wafer bowing이 감소된 것을 확인할 수 있었다. Columnar structure가 coalescence가 되면서 생기는 tensile stress가 GaN박막의 성장시 발생하는 compressive stress를 compensation하여 wafer bowing이 줄어든 것으로 보인다. 본 발표에서는 이 구조에 대한 구조 및 stress 효과에 대해서 논의할 예정이다.

• Applied Chemistry for Engineering
• /
• v.23 no.3
• /
• pp.266-270
• /
• 2012

A series of polyimide was prepared by reacting 4,4'-(hexafluoroisopropylidene)diphthalic anhydride (6FDA) as the anhydride monomer and 2,2'-bis(trifluoromethyl)benzidine (TFB), 2,2'-bis(3-aminophenyl)hexafluoropropane (BAFP), 2,2'-bis(3- amino- 4-methylphenyl) hexafluoropropane (BAMF), bis(3-aminophenyl)sulfone (APS), p-xylyenediamine (p-XDA), or m-xylyenediamine (m-XDA) as the amine monomer in N,N-dimethylacetamide (DMAc). Colorless and transparent polyimide (PI) films were obtained by casting the poly(amic acid)s (PAAs) solution at various heat treatment temperatures. The thermal properties of the PI films were examined using differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), and thermomechanical analysis (TMA) and the mechanical properties were investigated using universal tensile machine (UTM), Their optical transparencies were also investigated using ultraviolet-visible (UV-vis.) spectrophotometry and colorimetry. The yellow index (YI) and coefficient of thermal expansion (CTE) values of all PIs were in the range 0.98~2.76 and 25.73~55.23 $ppm/^{\circ}C$, respectively.

• Journal of the Microelectronics and Packaging Society
• /
• v.9 no.3
• /
• pp.37-41
• /
• 2002

In this research, we investigate the properties of membrane and thin film sensor which is using magnetic resonance properties. we expect to $Si_xN_y$ and SiC materials as membrane materials, we measured thin film stress and properties to find the best membrane fabrication condition. Of the two membrane, $Si_xN_y$ thin film is the better than SiC thin film. because of an adequate tensile stress and lower thermal expansion coefficient as sensor structure layer. After performing deposition and patterning thin film sensor material on $Si_xN_y$, we analyzed the magnetic hysteresis and magnetic resonance frequency of sensor. If the magnetic field which is applied in sensor material is removed, magnetization made by magnetic field is transited to elastic mode. moreover. energy radiation is induced during the transition and voltage generates in sensor by energy radiation. At this moment, If voltage generation period is longer, mechanical vibration is induced and signal is generated by mechanical vibration. we also see that as the increase of thin film sensor' length and width, magnetic resonance frequency is decreased.

• Polymer(Korea)
• /
• v.37 no.5
• /
• pp.618-624
• /
• 2013

Hydroquinone bis(trimellitic anhydride) (HQ-TA) was synthesized from trimellitic anhydride chloride and hydroquinone. Poly(amic acid)s (PAAs) were synthesized by reacting a HQ-TA with six different diamines, which were cyclized to yield polyimides (PIs) containing ester linkages by chemical- and thermal-imidization methods. The various PIs were synthesized from structurally different aromatic diamines. The glass transition temperatures ($T_g$) were in the range of 167-$215^{\circ}C$, and the decomposition temperatures (${T_D}^i$) were in the range of $364-451^{\circ}C$. The maximum improvements in coefficient of thermal expansion (CTE) and barrier to oxygen permeation were observed in PIs using TFB (3.23 $ppm/^{\circ}C$) and 4,4-ODA (< $10^{-2}cc/m^2/day$), respectively. The PI films possessed a transmittance of 65-89% at 500 nm and had a yellowish color with a yellow index (YI) of 3.01-69.52.

• Composites Research
• /
• v.26 no.2
• /
• pp.129-134
• /
• 2013

The strength of adhesive joints employed in composite structures under cryogenic environments, such as LNG tanks, is affected by thermal residual stress generated from the large temperature difference between the bonding process and the operating temperature. Aramid fibers are noted for their low coefficient of thermal expansion (CTE) and have been used to control the CTE of thermosetting resins. However, aramid composites exhibit poor adhesion between the fibers and the resin because the aramid fibers are chemically inert and contain insufficient functional groups. In this work, electrospun meta-aramid nanofiber-reinforced epoxy adhesive was fabricated to improve the interfacial bonding between the adhesive and the fibers under cryogenic temperatures. The CTE of the nanofiber-reinforced adhesives were measured, and the effect on the adhesion strength was investigated at single-lap joints under cryogenic temperatures. The fracture toughness of the adhesive joints was measured using a Double Cantilever Beam (DCB) test.

• Proceedings of the Korea Concrete Institute Conference
• /
• 2008.04a
• /
• pp.761-764
• /
• 2008

The present study is aimed to study the effect of elevated temperatures ranging from 20 to $700^{\circ}C$ on the strain properties of high-strength concrete of 40, 60, 80MPa grade. In this study, the types of test were the stressed test and stressed residual test that the specimens are subjected to a 25% of ultimate compressive strength at room temperature and sustained during heating and when target temperature is reached, the specimens are loaded to failure. Or specimens are loaded to failure after 24hour cooling time. tests were conducted at various temperatures ($20{\sim}700^{\circ}C$) for concretes made with W/B ratios 46%, 32% and 25%. Test results showed that the relative values of elastic modulus decreased with increasing compressive strength grade of specimen and the axial strain at peak stress were influenced by the load before heating. thermal strain of concrete at high temperature was affected by the preload as well as the compressive strength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.99-99
• /
• 2008

To grow the large diameter GaN with high structure and optical quality has been obtained by hydride vapor phase epitaxy(HVPE) method. In addition to the nitridation of $Al_2O_3$ substrate, we also developed a "step-growth process" to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch during cool down after growth. The as-grown 380um thickness and 75mm diameter GaN layer was separated from the sapphire substrate by laser-induced lift-off process at $600^{\circ}C$. A problem with the free-standing wafer is the typically large bowing of such a wafer, due to the built in the defect concentration near GaN-sapphire interface. A polished G-surface of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD), photoluminescence(PL) measurement, giving rise to the full-width at half maximum(FWHM) of the rocking curve of about 107 arcsec and dislocation density of $6.2\times10^6/cm^2$.