• Title/Summary/Keyword: 열회로

Search Result 319, Processing Time 0.031 seconds

Biocompatibility and Histopathologic Change of the Acellular Xenogenic Pulmonary Valved Conduit Grafted in the Right Ventricular Outflow Tract (우심실 유출로에 이식한 무세포화 이종 폐동맥 판막도관의 생체 적합성 및 조직병리학적 변화양상에 대한 연구)

  • 허재학;김용진;박현정;김원곤
    • Journal of Chest Surgery
    • /
    • v.37 no.6
    • /
    • pp.482-491
    • /
    • 2004
  • Background: The xenogenic or allogenic valves after in Vitro repopulation with autologous cells or in vivo repo-pulation after acellularization treatment to remove the antigenicity could used as an alternative to synthetic polymer scaffold. In the present study, we evaluated the process of repopulation by recipient cell to the acellu-larized xenograft treated with NaCl-SDS solution and grafted in the right ventricular outflow tract. Material and Method: Porcine pulmonary valved conduit were treated with. NaCl-SDS solution to make the grafts acellularized and implanted in the right ventricular outflow tract of the goats under cardiopulmonary bypass. After evaluating the functions of pulmonary valves by echocardiography, goats were sacrificed at 1 week, 1 month, 3 months, 6 months, and 12 months after implantation, respectively. After retrieving the implanted valved conduits, histopathologic examination with Hematoxylin-Eosin, Masson' trichrome staining and immunohistochemical staining was performed. Result: Among the six goats, which had been implanted with acellularized pulmonary valved conduits, five survived the expected time period. Echocardiographic examinations for pulmonary valves revealed good function except mild regurgitation and stenosis. Microscopic analysis of the leaflets showed progressive cellular in-growth, composed of fibroblasts, myofibroblasts, and endothelial cells, into the acellularized leaflets over time. Severe inflammatory respon-se was detected in early phase, though it gradually decreased afterwards. The extracellular matrices were regenerated by repopulated cells on the recellularized portion of the acellularized leaflet. Conclusion: The acellularized xenogenic pulmonary valved conuits were repopulated with fibroblasts, myofibroblasts, and endothelial cells of the recipient and extracellullar matrices were regenerated by repopulted cells 12 months after the implantation. The functional integrity of pulmonary valves was well preserved. This study showed that the acellularized porcine xenogenic valved conduits could be used as an ideal valve prosthesis with long term durability.

A 12b 200KHz 0.52mA $0.47mm^2$ Algorithmic A/D Converter for MEMS Applications (마이크로 전자 기계 시스템 응용을 위한 12비트 200KHz 0.52mA $0.47mm^2$ 알고리즈믹 A/D 변환기)

  • Kim, Young-Ju;Chae, Hee-Sung;Koo, Yong-Seo;Lim, Shin-Il;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.43 no.11 s.353
    • /
    • pp.48-57
    • /
    • 2006
  • This work describes a 12b 200KHz 0.52mA $0.47mm^2$ algorithmic ADC for sensor applications such as motor controls, 3-phase power controls, and CMOS image sensors simultaneously requiring ultra-low power and small size. The proposed ADC is based on the conventional algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. The input SHA with eight input channels for high integration employs a folded-cascode architecture to achieve a required DC gain and a sufficient phase margin. A signal insensitive 3-D fully symmetrical layout with critical signal lines shielded reduces the capacitor and device mismatch of the MDAC. The improved switched bias power-reduction techniques reduce the power consumption of analog amplifiers. Current and voltage references are integrated on the chip with optional off-chip voltage references for low glitch noise. The employed down-sampling clock signal selects the sampling rate of 200KS/s or 10KS/s with a reduced power depending on applications. The prototype ADC in a 0.18um n-well 1P6M CMOS technology demonstrates the measured DNL and INL within 0.76LSB and 2.47LSB. The ADC shows a maximum SNDR and SFDR of 55dB and 70dB at all sampling frequencies up to 200KS/s, respectively. The active die area is $0.47mm^2$ and the chip consumes 0.94mW at 200KS/s and 0.63mW at 10KS/s at a 1.8V supply.

Effect of environmental temperature on respiration rate, rectal temperature and body-surface temperatures in finishing pigs (환경온도가 비육돈의 호흡수, 직장 온도 및 체표면 온도에 미치는 영향)

  • Cheon, Si-Nae;Park, Kyu-Hyun;Choi, Hee-Chul;Kim, Jong-bok;Kwon, Kyeong-Seok;Lee, Jun-Yeob;Woo, Saem-Ee;Yang, Ga-Yeong;Jeon, Jung-Hwan
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.20 no.1
    • /
    • pp.103-110
    • /
    • 2019
  • Recently, Korea has been affected by extreme weather events including extended summers and increased temperatures caused by global warming and climate change. Environmental temperature is especially important to the livestock industry because it is closely related to livestock productivity. This study was conducted to investigate the influence of different environmental temperatures on respiration rate, rectal temperature and body-surface temperature in finishing pigs. Pigs ($98.3{\pm}6.6kg$) were housed in individual cages inside an experimental chamber and exposed continuously to one of five environmental treatments ($22^{\circ}C$, $24^{\circ}C$, $26^{\circ}C$, $28^{\circ}C$, $30^{\circ}C$) for 10 days without providing additional rest time. Feed and water intake, respiration rate, rectal temperature and body-surface (head, ear, neck, back, side) temperature were measured two times daily during the experimental period. A significant increase in respiration rate from $26^{\circ}C$ and in body-surface temperature from $24^{\circ}C$ (p<0.05) was observed. At $30^{\circ}C$, the respiration rate had almost doubled and the body-surface temperature increased by about $5^{\circ}C-7^{\circ}C$. Moreover, ear skin temperature was very sensitive to environmental temperature. However, feed intake, water intake and rectal temperature did not change significantly during the experiment.

Design of a CMOS x-ray line scan sensors (CMOS x-ray 라인 스캔 센서 설계)

  • Heo, Chang-Won;Jang, Ji-Hye;Jin, Liyan;Heo, Sung-Kyn;Kim, Tae-Woo;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.17 no.10
    • /
    • pp.2369-2379
    • /
    • 2013
  • A CMOS x-ray line scan sensor which is used in both medical imaging and non-destructive diagnosis is designed. It has a pixel array of 512 columns ${\times}$ 4 rows and a built-in DC-DC converter. The pixel circuit is newly proposed to have three binning modes such as no binning, $2{\times}2$ binning, and $4{\times}4$ binning in order to select one of pixel sizes of $100{\mu}m$, $200{\mu}m$, and $400{\mu}m$. It is designed to output a fully differential image signal which is insensitive to power supply and input common mode noises. The layout size of the designed line scan sensor with a $0.18{\mu}m$ x-ray CMOS image sensor process is $51,304{\mu}m{\times}5,945{\mu}m$.

The Fabrication and Characterization of Embedded Switch Chip in Board for WiFi Application (WiFi용 스위치 칩 내장형 기판 기술에 관한 연구)

  • Park, Se-Hoon;Ryu, Jong-In;Kim, Jun-Chul;Youn, Je-Hyun;Kang, Nam-Kee;Park, Jong-Chul
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.15 no.3
    • /
    • pp.53-58
    • /
    • 2008
  • In this study, we fabricated embedded IC (Double Pole Double throw switch chip) polymer substrate and evaluate it for 2.4 GHz WiFi application. The switch chips were laminated using FR4 and ABF(Ajinomoto build up film) as dielectric layer. The embedded DPDT chip substrate were interconnected by laser via and Cu pattern plating process. DSC(Differenntial Scanning Calorimetry) analysis and SEM image was employed to calculate the amount of curing and examine surface roughness for optimization of chip embedding process. ABF showed maximum peel strength with Cu layer when the procuring was $80\sim90%$ completed and DPDT chip was laminated in a polymer substrate without void. An embedded chip substrate and wire-bonded chip on substrate were designed and fabricated. The characteristics of two modules were measured by s-parameters (S11; return loss and S21; insertion loss). Insertion loss is less than 0.55 dB in two presented embedded chip board and wire-bonded chip board. Return loss of an embedded chip board is better than 25 dB up to 6 GHz frequency range, whereas return loss of wire-bonding chip board is worse than 20 dB above 2.4 GHz frequency.

  • PDF

Implementation of A Millimeter-Wave Multiflare-Angle Horn Antenna (밀리미터파 다중개구각 혼안테나 구현)

  • Oh, Kyung-Hyun;Kim, Ji-Hyung;Yang, Seung-Sik;Shin, Sang-Jin;Cho, Young-Ho;Lee, Byung-Ryul;Ahn, Bierng-Chearl
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.29 no.1
    • /
    • pp.36-41
    • /
    • 2018
  • This paper presents an implementation of a millimeter-wave(W band) multiflare-angle horn antenna. The proposed antenna is a multimode dual-polarized square horn having equal E- and H-plane beamwidths and consists of a multimode generating section, a four-square-waveguide exciter, orthomode transducers, and power combiners for the sum pattern formation. The antenna structure has been designed to allow for easy fabrication and the designed antenna has been fabricated to a precision of ${\pm}0.02mm$ by layer-by-layer machining and diffusion bonding. The input reflection coefficient and the radiation pattern of the fabricated antenna have been measured using a network analyzer and a far-field test facility. Measurements show that the proposed antenna has 17.7~18.3 dBi gain, $25.2{\sim}28.5^{\circ}$ beamwidth, and an input VSWR between 1.02~1.75, within ${\pm}0.5GHz$ from the center frequency.

A Study on the Fault Analysis of the Voltage Controller for the Combat Vehicle Generator (전투차량 발전기용 전압조정기 내열성 향상을 위한 고장분석 연구)

  • Ryu, Jeong-Min;Lee, Yong-Jun;Son, Kwonil
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.20 no.11
    • /
    • pp.386-393
    • /
    • 2019
  • In this study, we investigated the cause of a voltage controller failure that occurred in the operation of a combat vehicle and attempted to establish a solution for the failure. The failure in the voltage controller was found to be related to thermal resistance, which could be identified by disassembly analysis and a high temperature operation test. Especially, in the disassembly analysis, there was damage caused by high temperature such as soot on the molding material and cracking of the resisters. In addition, in the high temperature operation test, the test results show that the internal temperature of the voltage controller was relatively higher than the external temperature. This means that the voltage controller failure could be attributed to the excessive heat and insufficient thermal resistance. In order to improve the thermal resistance of the voltage controller, several designs with changing circuits and structures were devised. Improvement of thermal resistance was verified by measuring reduction of internal temperatures in the high temperature comparison test.

The Fabrication and Characterization of Diplexer Substrate with buried 1005 Passive Component Chip in PCB (PCB내 1005 수동소자 내장을 이용한 Diplexer 구현 및 특성 평가)

  • Park, Se-Hoon;Youn, Je-Hyun;Yoo, Chan-Sei;Kim, Pil-Sang;Kang, Nam-Kee;Park, Jong-Chul;Lee, Woo-Sung
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.14 no.2 s.43
    • /
    • pp.41-47
    • /
    • 2007
  • Today lots of investigations on Embedded Passive Technology using materials and chip components have been carried out. We fabricated diplexers with 1005 sized-passives, which were made by burying chips in PCB substrate and surface mounting chip on PCB. 6 passive chips (inductors and capacitors) were used for the frequency divisions of $880\;MHz{\sim}960\;MHz(GSM)$ and $1.71\;GHz{\sim}1.88\;GHz(DCS)$. Two types of diplxer were characterized with Network analyzer. The chip buried diplexer showed extra 5db loss and a little deviation of 0.6GHz at aimed frequency areas, whereas the chip mounted diplexer showed man. 0.86dB loss within GSM field and max. 0.68dB within DCS field respectively. But few degradations were observed after $260^{\circ}C$ for 80min baking and $280^{\circ}C$ for 10sec solder floating.

  • PDF

Design of a 2.5V 300MHz 80dB CMOS VGA Using a New Variable Degeneration Resistor (새로운 가변 Degeneration 저항을 사용한 2.5V 300MHz 80dB CMOS VGA 설계)

  • 권덕기;문요섭;김거성;박종태;유종근
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.40 no.9
    • /
    • pp.673-684
    • /
    • 2003
  • A degenerated differential pair has been widely used as a standard topology for digitally programmable CMOS VGAs. A variable degeneration resistor has been implemented using a resistor string or R-2R ladder with MOSFET switches. However, in the VGAs using these conventional methods, low-voltage and high-speed operation is very hard to achieve due to the dc voltage drop over the degeneration resistor. To overcome this problem a new variable degeneration resistor is proposed where the dc voltage drop is almost removed. Using the proposed gain control scheme, a low-voltage and high-speed CMOS VGA is designed. HSPICE simulation results using a 0.25${\mu}{\textrm}{m}$ CMOS process parameters show that the designed VGA provides a 3dB bandwidth of 360MHz and a 80dB gain control range in 2dB step. Gain errors are less than 0.4dB at 200MHz and less than l.4dB at 300MHz. The designed circuit consumes 10.8mA from a 2.5V supply and its die area is 1190${\mu}{\textrm}{m}$${\times}$360${\mu}{\textrm}{m}$.

Highly Linear 1 W Power Amplifier MMIC for the 900 MHz Band Using InGaP/GaAs HBT (InGaP/GaAs HBT를 이용한 900 MHz 대역 1 W급 고선형 전력 증폭기 MMIC 설계)

  • Joo, So-Yeon;Han, Su-Yeon;Song, Min-Geun;Kim, Hyung-Chul;Kim, Min-Su;Noh, Sang-Youn;Yoo, Hyung-Mo;Yang, Youn-Goo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.22 no.9
    • /
    • pp.897-903
    • /
    • 2011
  • This paper presents a highly linear power amplifier MMIC, having an output power level of about 1 watt, based on InGaP/GaAs hetero-junction bipolar transistor(HBT) technology for the 900 MHz band. The active bias circuit is applied to minimize the effect of temperature variation. Ballast resistors are optimized to prevent a current collapse and a thermal runaway. The fabricated power amplifier exhibited a gain of 17.6 dB, an output P1dB of 30 dBm, and a PAE of 44.9 % at an output P1dB from the one-tone excitation. It also showed a very high OIP3 of 47.3 dBm at an average output power of 20 dBm from the two-tone excitation.