• Progress in Medical Physics
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• v.16 no.4
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• pp.202-206
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• 2005

Three-dimensional thermoluminescence (TL) spectra from $MgAl_2O_4$ irradiated with UV light were measured over 300${\~}$600 K and 300${\~}$800 nm. The peak positions of TL glow curves were shifted to lower temperature with increasing the exposure time of UV light. The 476 K TL glow curve is due to the second kinetics and its activation energy and escape frequency factor are calculated to be 0.85 eV and $1.92{\times}10^6 sec^{-1}$, respectively The TL spectra were split into 530 nm and 700 nm emission bands which were associated with $V^{2+}$ and $Cr^{2+}$, respectively. The linearity range of 700 nm omission band is smaller than that of 530 nm emission band, but the saturation time of 700 nm emission band is longer than that of 530 nm omission band.

• Progress in Medical Physics
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• v.12 no.1
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• pp.1-8
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• 2001

Diamond thin films were synthesized by a chemical vapor deposition (CVD). Raman spectrum showed the diamond line at 1332 $cm^{-1}$ / and x-ray diffraction pattern exhibited a strong (111) peak of diamond. The scanning electron microscopy analysis showed that the CVD diamond thin film was grown to be unepitaxial crystallites with pyramidal hillocks. A wavelength-resolved thermoluminescence (TL) of the CVD diamond thin film irradiated with X-rays showed one peak at 430 nm around 560 K. The glow curve of the CVD diamond thin film produced one dominant 560-K peak that was caused by first-order kinetics. Its activation energy and the escape frequency were calculated to be 0.92 ～ 1.05 eV and 1.34 $\times$ 10$^{7}$ sec$^{-1}$ , respectively. The emission spectrum at 560 K was split into 1.63-eV, 2.60-eV, and 3.07-eV emission bands which is known to be attribute to silicon-vacancy center, A center, and H3 center, respectively.

• Progress in Medical Physics
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• v.4 no.2
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• pp.49-58
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• 1993

The complex glow curves were split into isolated glow curves to be calculated the values of kinetic order, activation energy, escape frequency and density of initial trap from the independent glow curves using the mathematical method of thermally stimulated processes. The minimization of the intensity difference between measured and theoretical glow curve was done by the nonlinear least-square program. The results of the fitted curves were almost equal to the actual values of the parameters. Thermoluminescence from gamma ray irradiated ${\alpha}$-Al$_2$ $O_3$ over the range of 300K to 600K was split into six glow curves. The kinetic order, activation energy and escape frequency of first glow curve were obtained as 1, 1.12eV and 6.79X10$\^$12/sec$\^$-1/, respectively, which were similar to the results of other method. Also the parameters of the second and the third glow curve and so forth were calculated.

• Progress in Medical Physics
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• v.6 no.2
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• pp.51-60
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• 1995

Lithium Fluoride (LiF; TLD-100) crystal chips are normally used as thermolu minescence dosimeters (abbreviated as NC-100) for estimating the absorbed dose to the skin of a patient or in a solid water phantom undergoing radiotherapy with megavoltage photon (6 and 15MV) beams. In general, investigation has revealed a reduction in the sensitivity of NC-100 chips after many runs through heating cycles. A TLD-100 chip laminated with gold plate (140${\mu}{\textrm}{m}$) on the upper surface layer of its face toward the photon beam (abbreviated as GC-100) has properties different from that of a NC-100 chip activated by incident photons and contaminant electrons with various lower energies coming from the gantry head and air. Activation of the valence band electrons of GC-100 chips by incident photons, positrons and electrons-which come from the gold plate by mainly pair production process and partly from Compton scattering-results in more enhanced signal intensity, higher response per monitor unit, as well as a good linearity with monitor units and independence of dose rate. Since the electron beams (6 and 15 MeV) do not have the probability of pair production process with gold plate, there is only a small difference (about a 3.3％ increase for 15 MeV) in the signal gaps in the TL readout for electron beams between GC- and NC-100 chips. The 3.3％ increase is entirely due to the buildup caused by the 140 m gold plate. The sensitivity of GC-100 chips is much more susceptible to high energy photon beams than electron one because of pair production. The interaction of high energy photon with a material of high atomic number, such as the good plate in this case, results in a considerably significant probability of pair production. The gold plate on the NC-100 chips acts as not only an intensifier of their signals but also acts as a filter of contaminant electrons in therapeutic high energy X-ray beams.