• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.12
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• pp.2110-2117
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• 2003

A physics-based material removal model in various scales is described and a feature scale simulation for a chemical mechanical polishing (CMP) process is performed in this work. Three different scales are considered in this model, i.e., abrasive particle scale, asperity scale and wafer scale. The abrasive particle and the asperity scales are combined together and then homogenized to result in force balance conditions to be satisfied in the wafer scale using an extended Greenwood-Williamson and Whitehouse-Archard statistical model that takes into consideration the joint distribution of asperity heights and asperity tip radii. The final computation is made to evaluate the material removal rate in wafer scale and a computer simulation is performed for detailed surface profile variations on a representative feature. The results show the dependence of the material removal rate on the joint distribution, applied external pressure, relative velocity, and other operating conditions and design parameters.

• Journal of the Earthquake Engineering Society of Korea
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• v.12 no.3
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• pp.37-44
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• 2008

This study investigates the influence of various soil properties on the seismic performance of a three-span FCM bridge. Piers that are vulnerable to seismic vibration are identified through numerical study of plastic hinges possibly occurring at the top and bottom of the piers. The fragility curve is obtained as a lognormal distribution function with respect to peak ground acceleration(PGA). The median and logarithmic standard deviation, which are two parameters of a lognormal distribution function, are estimated using the maximum likelihood method. In order to consider the different soil properties of each support, an equivalent spring based on the Korean Standard Specifications for Highway Bridges(KSSHB) is adopted in this study. For seismic fragility analysis, the rotational ductility demands of bridge piers are used as a damage index of the structure.