• Applied Chemistry for Engineering
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• v.22 no.6
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• pp.631-635
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• 2011

Spherical and non-spherical silica particles prepared by the direct oxidation were studied for the effect of the particle size and shape of these particles on oxide CMP removal rate. Spherical silica particles, which have 10~100 nm in size, were prepared by the direct oxidation process from silicon in the presence of alkali catalyst. The 10 nm silica particles were aggregated by addition of an acid, an alcohol, or a silane as an aggregation inducer between the particles. Two or more aggregated silica particles were used as a seed to grow non spherical silica particles in the direct oxidation process of silicon in the presence of alkali catalyst. The oxide removal rate of spherical silica particles increased with increasing an average particle size for spherical silica abrasives in the oxide CMP. It further increased non-spherical particles, compared with the spherical particles in the similar average particle size.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.10a
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• pp.85-85
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• 2003

• Tribology and Lubricants
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• v.26 no.4
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• pp.219-223
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• 2010

Despite the increasing need of nanometer-scale accuracy in abrasive machining using ultrasmall particles such as abrasive jet and chemical mechanical polishing(CMP), the process mechanism is still unknown. Based on the background, research on the effects of various process parameters on the machined surface at abrasive machining was motivated and performed by using finite element analysis where the effect of slurry fluid flow involved. The effect of particle shape on the machined surface during particle-surface collision was discussed in this paper. The results from FEA simulation revealed that any damage or defect generation on machined surface by the impact may occur only if the particle has enough impact energy. Therefore, it could be concluded that generation of the defects and damage on the wafer surface after CMP process was mainly due to direct contact of the 3 bodies, i.e., pad-particle-wafer.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.12 no.5
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• pp.59-66
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• 2003

This study suggests the new ultraprecision finishing techniques for micro die and mold parts using magnetic field-assisted polishing. Conventional magnetic abrasives have several disadvantages, which are missing of abrasive particle and inequal mixture between magnetic particle and abrasive particle. Therefore, bonded magnetic abrasive particles are fabricated by several method. For example, plasma melting and direct bonding. Carbonyl iron powder is used as magnetic particle there silicon carbide and alumina are abrasive particles. Developed magnetic abrasives are analyzed using SEM. Feasibility of magnetic abrasive and polishing performance of this magnetic abrasive particles also have been investigated. After polishing, surface roughness of workpiece is reduced from 85.4 ㎚ Ra to 9 ㎚ RA.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.361-367
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• 2001

Recently, Chemical Mechanical Polishing(CMP) has become a leading planarization technique as a method for silicon wafer planarization that can meet the more stringent lithographic requirement of planarity for the future submicron device manufacturing. The SOI(Silicon On Insulator) wafer has received considerable attention as bulk-alternative wafer to improve the performance of semiconductor devices. In this paper, the objective of study is to investigate Material Removal Rate(MRR) and surface micro-roughness effects of slurry and pad in the CMP process. When particle size of slurry is increased, Material Removal rate increase. Surface micro-roughness is greater influenced by pad than by particle size of slurry. As a result of AM measurement, surface micro-roughness was improved from 27 $\AA$ Rms to 0.64 $\AA$Rms.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.227-230
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• 2002

New polishing technique for small parts has been tried out using the principle of particle electromechanics. Common fine abrasives such as alumina, diamond, silicon carbide are dielectric materials which are polarized under an electric field, and a non-uniform electric field makes abrasive particles translate along the field line. Using this principle, We make abrasive particles aggregate in the vicinity of the micro tool which is fir the surface finishing of a small part without contact with it. The behavior of particles is optically measured, and the machined depth of glass is examined.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.295-296
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• 2008

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.11a
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• pp.775-778
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• 2000

Magnetorheological Finishing(MRF) is a newly developed and recently commercialized for finishing optical components. The magnetorheological fluid consists of a water based suspension of carbonyl iron, nonmagnetic polishing abrasives, and small amounts of stabilizer. Theoretical analysis of MRF, based on Bingham lubrication theory, is illustrated and a correlation between surface shear stress on the workpiece and material removal is obtained.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.10
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• pp.1023-1028
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• 2009

Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-step CMP consists of Cu and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the chemical mechanical cleaning(CMC) is performed various conditions as a cleaning process. The CMC process combined mechanical cleaning by friction between a wafer and a pad and chemical cleaning by CMC solution consists of tetramethyl ammonium hydroxide (TMAH) / benzotriazole (BTA). This paper studies the removal of abrasive on the Cu wafer and the cleaning efficiency of CMC process.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1880-1884
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• 2008

Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-steop CMP consists of Cu CMP and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the buffing is performed various conditions as a cleaning process. The buffing process combined mechanical cleaning by friction between a wafer and a buffing pad and chemical cleaning by buffing solution consists of tetramethyl ammonium hydroxide (TMAH)/benzotriazole(BTA).