• Laser Solutions
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• v.8 no.2
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• pp.21-32
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• 2005

The excimer laser ablation of a polymer occurs by the excitation of chemical bonds to energy levels that are above the dissociation energy. In this process, however, fragmented debris is finally ejected explosively by the scission of bonds and accumulates on the material surface. In the present work, a process for eliminating surface debris contamination generated by the laser ablation of a polymer is developed. The proposed approach for removing surface debris utilizes an erasable ink pasted on a polymide. The ink pasted polyimide is ablated by KrF excimer laser. The surface debris ejected from the polyimide is then combined with the ink layer on the polymer. Finally, both the surface debris and the ink layer are removed using adhesive tape or alcohol solvent. The results suggest that the erasable ink method is a simple, low cost, and extremely effective debris eliminating process.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.12
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• pp.2310-2316
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• 2016

We studied the effect of $Co^{60}$ gamma-radiation on the fiber Bragg gratings (FBGs) by irradiation time of UV Krypton fluoride (KrF) excimer laser among grating processing parameters. The FBGs were fabricated in a different UV laser irradiation time at 30, 60, 90, and 120 seconds using the same commercial Ge-doped silica core fiber (SMF-28e). It was exposed to gamma-radiation up to a high dose of 34.3 kGy at the dose rate of 106 Gy/min, and then it was analyzed radiation effects by measuring the radiation-induced change in the temperature sensitivity coefficient and Bragg wavelength shift. According to the experimental results, We confirmed that the UV laser irradiation period for grating inscription has a highly effect on the radiation sensitivity of the FBGs. The radiation-induced Bragg wavelength shift by the change of laser irradiation conditions showed a difference more than about 50 %.

• Korean Journal of Optics and Photonics
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• v.24 no.5
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• pp.224-230
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• 2013

Laser Lift-Off (LLO) is a process that removes a GaN or AIN thin layer from a sapphire wafer to manufacture vertical-type LEDs. It consists of a light source, an attenuator, a mask, a projection lens and a beam homogenizer. In this paper, we design an attenuator and a projection lens. We use the 'ZEMAX' optical design software for analysis of depth of focus and for a projection lens design which makes $7{\times}7mm^2$ beam size by projecting a beam on a wafer. Using the 'LightTools' lighting design software, we analyze the size and uniformity of the beam projected by the projection lens on the wafer. The performance analysis found that the size of the square-shaped beam is $6.97{\times}6.96mm^2$, with 91.8 % uniformity and ${\pm}30{\mu}m$ focus depth. In addition, this study performs dielectric coating using the 'Essential Macleod' to increase the transmittance of an attenuator. As a result, for 23 layers of thin films, the transmittance total has 10-96% at angle of incidence $45-60^{\circ}$ in S-polarization.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.102-103
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• 2002

금속 입자들이 채워진 유리는 광 호변성 물질로써 광 저장 디스크, 광 도파로 그리고 도파로 레이저, 광 스위치 등의 다양한 응용분야에 이용될 수 있음이 여러 연구진들에 의해서 밝혀져 왔다. [1] 광 호변성이란 외부에서 입사되는 광에 의해서 유리의 색이 변색되는 현상인데 이는 유리에 함유된 물질들이 광이나 열에 의해서 변화하기 때문이다. Wood 등은 열처리와 불꽃에 의한 가열 등을 이용하여 은 입자를 작은 입자로 쪼개고. 이를 엑시머 레이저로 열처리시키면 은 입자가 분해된다는 것을 보였다. (중략)

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.471-472
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• 2012

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.8
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• pp.1791-1796
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• 2011

An optical fiber short period grating of 0.7 nm as a 3 dB wavelength linewidth was fabricated using a Gaussian distributed KrF Eximer laser and a phase mask. This grating has temperature dependancy of 0.01 nm/$^{\circ}C$ over the range of -10 $^{\circ}C$ ~ 70 $^{\circ}C$and no difference between temperature directions. An optical fiber long period grating of 14.22 nm as a 3 dB linewidth was also fabricated using a amplitude mask and has dependancy of 0.01 nm/$^{\circ}C$ over the same range.

• Korean Journal of Optics and Photonics
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• v.5 no.3
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• pp.386-393
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• 1994

We have investigated output characteristics of XeCI excimer laser excited by transeverse electronbeam. We used e-beam output of 880 kV, 21 kA (70 ns, FWHM) and controlled current density of e-beam by pulsed magnetic coil (4.7 kG) which was fabricated around an e-beam diode (A-K gap is 21 mm) and laser chamber. We have obtained 35 J (4 atm) of e-beam deposition energy injected into laser media. The deposition energy was converted from an exposure area of Radcolor film and rising pressure of gas media which is measured by pressure jump method. The excited volume of $320cm^{3}$ was calculated. The maximum efficiency of 1.7% was obtained with the mixing ratio of HCllXe/Ar==0.2/ 6.3/93.5% and total pressure of 3 atm. Also laser output energy and specific energy were obtained 0.52 J and 1.7 J/I, respectively. For the analysis of experimental results we have developed computer simulation code. From the good agreements with the results of experiment and simulation we could theoretically explain the XeCI* formation channel. relaxation channel, and absorption channel of 308 nm.308 nm.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1448-1450
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• 2001

본 연구에서는 알루미늄 마스크를 이용하여 다결정 실리콘 결정립의 수평성장을 유도하는 새로운 엑시머 레이저 어닐링 방법을 제안한다. 제안된 방법은 비정질 실리콘 박막 위에 알루미늄 패턴을 형성하여 선택적으로 레이저 빔을 차단시키고, 액상 실리콘의 열을 금속박막을 통해 방출시킴으로써 다결정 실리콘 결정립의 수평성장을 유도할 수 있다. 제안된 레이저 결정화 방법을 이용하여 최대 1.6${\mu}m$의 수평성장 결정립을 형성하였고, 알루미늄 패턴의 경계로부터 결정립을 성장시킴으로써 결정립 경계의 위치를 제어하였다. 제안된 방법을 이용하여 제작한 다결정 실리콘 박막 트랜지스터는 기존의 다결정 실리콘 박막 트랜지스터에 비해 전계효과 이동도 및 온/오프 전류비 등의 전기적 특성이 우수하였다.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.15-21
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• 1993

This paper describes the design and development of a KrF excimer laser stepper and discusses the detailed system parameters and characterization data obtained from the performance test. We have developed a deep UV step-and-repeat system, operating at 248 nm, by retrofitting a commercial modules such as KrF excimer laser, precision wafer stage and fused silica illumination and 5X projection optics of numerical aperture 0.42. What we have developed, to the basic structure, are wafer alignment optics, reticle alignment system, autofocusing/leveling mechanisms and environment chamber. Finally, all these subsystem were integrated under the control of microprocessor-based controllers and computer. The wafer alignment system comprises the OFF-AXIS and the TTL alignment. The OFF-AXIS alignment system was realized with two kinds of optics. One is the magnification system with the image processing technique and the other is He-Ne laser diffraction type system using the alignment grating on the wafer. 'The TTL alignment system employs a dual beam inteferometric method, which takes advantages of higher diffraction efficiency compared with other TTL type alignment systems. As the results, alignment accuracy for OFF-AXIS and TTL alignment system were obtained within 0.1 $\mu\textrm{m}$/ 3 $\sigma$ for the various substrate on the wafers. The wafer focusing and leveling system is modified version of the conventional systems using position sensitive detectors (PSD). This type of detection method showed focusing and leveling accuracies of about $\pm$ 0.1 $\mu\textrm{m}$ and $\pm$ 0.5 arcsec, respectively. From the CD measurement, we obtained 0.4 $\mu\textrm{m}$ resolution features over the full field with routine use, and 0.3 $\mu\textrm{m}$ resolution was attainable under more strict conditions.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.268-271
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• 1993

Discharge pumped high power excimer laser is a very useful light source of ultraviolet region. In this paper. the design and operation characteristics of UV pre-ionized discharge pumped XeCl laser are discussed. Maximum output power of 890mJ at the efficiency of 1.4% was achieved with 35kV charging voltage, 3.4atm of total pressure and 10pps of pulse repetition rate. Optimum HCl pressure is considered to be between 2.5 and 3.5torr.