• Korean Journal of Optics and Photonics
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• v.16 no.2
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• pp.162-167
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• 2005

An optical directional coupler, which consists of quantum wells with nanothickness, is designed by using Modal Transmission Line Theory (MTLT). To demonstrate the validity and usefulness, the propagation characteristics and the coupling efficiencies are rigorously evaluated at nanoscale couplers, which consist of double quantum wells with different effective masses. The numerical result reveals that the coupling efficiency of nanoscale couplers is maximized at a coupling length 2052.3 nm, if the total electron energy is 83.9 meV. Furthermore, the coupler operates as a filter with narrower band as the barrier thickness increases.

• Proceedings of the Korean Society of Disaster Information Conference
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• 2022.10a
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• pp.331-332
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• 2022

현행 기계경비지도사는 기계경비업체 수에 비해 과도하게 많은 자격취득자가 배출되어 자격제도의 효과성에 대한 평가가 요구된다. 신규 자격취득자는 높아진 진입장벽으로 기계경비업체로 진출하기 어렵고, 활동 중인 기계경비지도사 또한 경비원을 지도·감독 및 교육하는 직무를 수행하기 어려운 실정이다. 이 연구에서는 효과성이 소멸하고 있는 기계경비지도사의 폐지 및 통합경비지도사로의 개편과 함께 경비지도사 자격시험에 기계경비 관련 과목을 필수과목으로 지정하는 방안 등을 제안한다.

• Journal of Radiation Protection and Research
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• v.26 no.4
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• pp.393-398
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• 2001

The non-combustible RI wastes disposed of in hospital every year emit ${\gamma}$-ray or ${\beta}$-ray but their activities are very low to the extent of background. Development of more simple methods is needed because the conventional detection methods are so ineffective and complex. In this study, to solve this problem, detection method using efficiency curve for ${\gamma}$-ray emitting radioactive wastes measurement is proposed and experimental detection efficiency equation is also determined through HPGe's standard specimen measurement. For ${\beta}$-emitting radioisotopes detection, new measurement method using detection efficiency estimated by Monte Carlo simulation and SBD measurements is also proposed. According to the results of this paper, the unknown activity of low-level radioactive wastes without LSC requiring the preparation of standard sample and measurement for standard source detection efficiency could be determined efficiently and simply about ${\pm}17%$ in errors by using the theoretical detection efficiency and the SBD measurement result.

• Korean Chemical Engineering Research
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• v.48 no.4
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• pp.506-510
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• 2010

Electron recombinations in electrolyte solution reduce light-to-energy conversion efficiency at the nanoporous electrode surface of dye sensitized solar cells. In this study, we improved the conversion efficiency using an energy barrier at the nanoporous electrode surface to control the recombination process. The energy barrier was formed by coating nanoporous $TiO_2$ electrode with $Nb_2O_5$ material. We investigated the influence of energy barrier on the cell efficiency depending on the coating thickness. Nanoporous $TiO_2$ electrode was coated about 5 nm thickness by 12 times coatings, and so the coating layer was grown about 0.417 nm for every time. Enhancement of conversion efficiency from 2.55% to 4.25% was achieved at 0.834 nm coating thickness, and it was believed as the optimum thickness for minimizing the electron recombination process in our experimental system.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.232-232
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• 1999

교류형 플라즈마 방전 표시기(AC Plasma Display Panel, AC PDP)에 사용되는 플라즈마는 그 부피가 너무 작아서 플라즈마에 변화를 일으키지 않고 그 물성을 관측하기란 쉬운일이 아니다. 그래서 주로 PDP 내의 물성을 관측하는 데 시뮬레이션에 의존하게 된다. 그 물성중에 PDP내의 전계 분포에 대한 정보는 방전의 형성 및 소멸에 대한 많은 단서를 제공하고 있다. 특히 AC PDP의 경우, 유전체에 형성되는 벽적하(wall charge)가 방전의 형성 및 PDP 구동에 중요한 역할을 하는데, 이는 PDP 내의 전계 분포를 살펴봄으로써 대략 예측할 수 있다. 본 연구에서는 시뮬레이션에 의존하지 않고, 직접 레이저 유도 형광법을 이용하여 AC PDP 내의 전계를 측정하였다. 방전 가스인 헬륨(He)의 에너지 준위는 전계의 크기에 따라 에너지 준위가 변화하여, Rydberg(n$\geq$8) 준위가 여러 개의 준위로 나누어지는 현상이 일어나는데, 이를 Stack 효과라고 한다. 따라서 전계의 세기가 커짐에 따라서 각 준위와 준위 사이 값(splitting)이 커지는데, 이를 이용하면 전계를 측정할 수 있다. 즉, 헬륨 원자를 여기시키는 레이저 파장을 변화시키면서 관측되는 레이저 유도 형광 신호를 관측하면, 준위의 splitting을 관측할 수 있다. 본 연구에서는 PDP 내의 전계의 시간적 변화를 관측하였다. 50%, 40kHz의 구형파를 PDP의 두 전극에 가하였을 때, 플라즈마가 켜진 상태뿐만 아니라 플라즈마가 꺼진 후에도 전계에 의한 Splitting 신호가 관측이 되었는데, 전계로 환산하였을 때, 그 값은 대략 수 kV/cm의 값을 갖았는데, 이는 wall charge에 의한 값으로 사료된다.결과로 생각되어진다.플라즈마의 강도값을 입력하여 플라즈마의 radiation을 검출하고, 스퍼터링 공정중 실질적인 in-situ 정보로 이용하였다. PEM을 통하여 In/Sn의 플라즈마 강도변화를 조사하였다. 초기 In/Sn의 플라즈마 강도(intensity)는 강도를 100하여, 산소를 주입한 결과, plasma intensity가 35 줄어들었고, 이때 우수한 ITO 박막을 얻을 수 있었다. Pulsed DC power를 사용하여 아크 현상을 방지하였다. PET 상에 coating 된 ITO 박막의 표면저항과 광투과도는 4-point prove와 spectrophotometer를 이용하여 분석하였고, AES로 박막의 두께에 따른 성분비를 확인하였다. ITO 박막의 광투과도는 산소의 유량과 sputter 된 In/Sn ion의 plasma emission peak에 따라 72%-92%까지 변화하였으며, 저항은 37$\Omega$/$\square$ 이상을 나타내었다. 박막의 Sn/In atomic ratio는 0.12, O/In의 비율은 In2O3의 화학양론적 비율인 1.5보다 작은 1.3을 나타내었다.로 보인다.하면 수평축과 수직축의 분산 장벽의 비에 따라 cluster의 두께비가 달라지는 성장을 볼 수 있었고, 한 축 방향으로의 팔 넓이는 fcc(100) 표면의 경우 동일한 Ed+Ep값에 대응하는 팔 넓이와 거의 동일한 결과가 나타나는 것을 볼 수 있다. 따라서 이러한 비대칭적인 모양을 가지는 성장의 경우도 cluster 밀도, cluster 모양, cluster의 양 축 방향 길이 비, 양 축 방향의 평균 팔 넓이로부터 각 축 방향의 분산 장벽을 얻어낼 수 있을 것으로 보인다. 기대할 수 있는 여러

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.6
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• pp.14-18
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• 2019

The conductivity of a semiconductor is primarily determined by the carriers. To achieve higher conductivity, the number of carriers should be high, and an energy trap level is created so that the carriers can cross the forbidden zone with low energy. Carriers have a crystalline binding structure, and interfacial mismatching tends to make them less conductive. In general, high-concentration doping is typically used to increase mobility. However, higher conductivity is also observed in non-orthogonal conjugation structures. In this study, the phenomena of higher conductivity and higher mobility were observed with space charge limiting current due to tunneling phenomena, which are different from trapping phenomena. In an atypical structure, the number of carriers is low, the resistance is high, and the on/off characteristics of capacitances are improved, thus increasing the mobility. ZTO thin film improved the on/off characteristics of capacitances after heat treating at $150^{\circ}C$. In charging and discharging tests, there was a time difference in the charge and discharging shapes, there was no distinction between n and p type, and the bonding structure was amorphous, such as in the depletion layer. The amorphous bonding structure can be seen as a potential barrier, which is also a source of space charge limiting current and causes conduction as a result of tunneling. Thus, increased mobility was observed in the non-structured configuration, and the conductivity increased despite the reduction of carriers.

• Applied Chemistry for Engineering
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• v.34 no.2
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• pp.126-130
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• 2023

In response to environmental demands, pyrolysis is one of the practical methods for obtaining reusable oils from waste plastics. However, the waste plastic pyrolysis oils (WPPO) are consumed as low-grade fuel oil due to their impurities. Thus, this study focused on the upgrading method to obtain naphtha catalytic cracking feedstocks from WPPO by the hydroprocessing, including hydrotreating and hydrocracking reaction. Especially, various transition metal sulfides supported catalysts were investigated as hydrotreating and hydrocracking catalysts. The catalytic performance was evaluated with a 250 ml-batch reactor at 370~400 ℃ and 6.0 MPa H₂. Sulfur-, nitrogen-, and chlorine-compounds in WPPO were well eliminated with nickel-molybdenum/alumina catalysts. The NiMo/ZSM-5 catalyst has the highest naphtha yield.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.1
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• pp.33-37
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• 2008

A noticeable amount of Kirkendall voids formed at the Sn-3.5Ag solder joint with electroplated Cu, and that became even more significant when an additive was added to Cu electroplating bath. With SPS, a large amount of voids formed at the $Cu/Cu_3Sn$ interface of the solder joint during thermal aging at $150^{\circ}C$. The in-situ AES analysis of fractured joints revealed S segregation on the void surface. Only Cu, Sn, and S peaks were detected at the fractured $Cu/Cu_3Sn$ interfaces, and the S peak decreased rapidly with AES depth profiling. The segregation of S at the $Cu/Cu_3Sn$ interface lowered interface energy and thereby reduced the free energy barrier for the Kirkendall void nucleation. The drop impact test revealed that the electrodeposited Cu film with SPS degraded drastically with aging time. Fracture occurred at the $Cu/Cu_3Sn$ interface where a lot of voids existed. Therefore, voids occupied at the $Cu/Cu_3Sn$ interface are shown to seriously degrade drop reliability of solder joints.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.365-370
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• 2010

The growth interruption effects on growth mode of the GaAs and AlGaAs epitaxial layers grown on GaAs substrate by molecular beam epitaxy were investigated. Growth process of the epitaxial layers as a function of the growth interruption time was observed by reflection high energy electron diffraction (RHEED). The growth interruption time was 0, 15, 30, 60 s. The GaAs/$Al_{0.3}Ga_{0.7}As$ multi quantum wells (MQWs) with different growth interruption time were grown and its properties were investigated. RHEED intensity oscillation and optical property of the MQWs were dependent on the growth interruption time. When the growth interruption time was 30 s, interface between the well and barrier layers became sharper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.556-561
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• 2022

Computational material science as an application of Density Functional Theory (DFT) to the discipline of material science has emerged and applied to the research and development of energy materials and electronic materials such as semiconductor. However, there are a few difficulties, such as generating input files for various types of materials in both the same calculating condition and appropriate parameters, which is essential in comparing results of DFT calculation in the right way. In this tutorial status report, we will introduce how to create crystal structures and to prepare input files automatically for the Vienna Ab initio Simulation Package (VASP) and Gaussian, the most popular DFT calculation programs. We anticipate this tutorial makes DFT calculation easier for the ones who are not experts on DFT programs.