• Title/Summary/Keyword: 어레이 자성센서

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Magnetoresistive Properties of Array IrMn Spin Valves Devices (어레이 IrMn 스핀밸브 소자의 자기저항특성 연구)

  • Ahn, M.C.;Choi, S.D.;Joo, H.W.;Kim, G.W.;Hwang, D.G.;Rhee, J.R.;Lee, S.S.
    • Journal of the Korean Magnetics Society
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    • v.17 no.4
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    • pp.156-161
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    • 2007
  • To develop array magnetic sensors, specular-type giant magnetoresistive- spin valve (GMR-SV) film of Glass/Ta(5)MiFe(7)/IrMn(10)NiFe(5)/$O_2$/CoFe(5)/Cu(2.6)/CoFe(5)/$O_2$/NiFe(7)/Ta(5)(nm) was deposited by using a high-vacuum sputtering system. One of 15 way sensors in the area of $8{\times}8mm^2$ was Patterned a size of $20{\times}80{\mu}m^2$ in multilayer sample by Photo-lithography. All of 15 sensors with Cu electrodes were measured a uniform magnetic properties by 2-probe method. The highest magnetic sensitivity of MR and output voltage measured nearby an external magnetic field of 5 Oe were MS = 0.5%/Oe and ${\triangle}$V= 3.0 mV, respectively. An easy-axis of top-free layers of $CoFe/O_2/NiFe$ with shape anisotropy was perpendicular to one of bottom-pinned layers $IrMn/NiFe/O_2/CoFe$. When the sensing current increased from 1 mA to 10 mA, the output working voltage uniformly increased and the magnetic sensitivity was almost stable to use the nano-magnetic devices with good sensitive properties.