• Title/Summary/Keyword: 양극 접합

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MEMS용 MLCA와 Si기판의 양극접합 특성

  • 정귀상;김재민
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2003.12a
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    • pp.105-108
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    • 2003
  • 본 논문은 파이렉스 #7740 유리박막을 이용한 MEMS용 MLCA와 Si기판의 양극접합 특성에 관한 것이다. 최적의 RF 마그네트론 스퍼터링 조건(Ar 100 %, input power $1W/\textrm{cm}^2$)하에서 MLCA 기판위에 파이렉스 #7740 유리의 특성을 갖는 박막을 증착한 후 600 V, $400^{\circ}C$에서 1시간동안 양극접합했다. 그 다음에 Si 다이어프램을 제조한 후, MLCA/Si 접합계면과 MLCA 구동을 통한 Si 다이어프램 변위특성을 분석 및 평가하였다. 다이어프램 형상에 따라 정밀한 변위 제어가 가능했으며 0.05-0.08 %FS의 우수한 선형성을 나타내었다. 또한, 측정동안 접합계면 균열이나 계면분리가 일어나지 않았다. 따라서, MLCA/Si기판 양극접합기술은 고성능 압전 MEMS 소자 제작공정에 유용하게 사용가능할 것이다.

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Measurement of Glass-Silicon Interfacial fracture Toughness and Experimental Evaluation of Anodic Bonding Process based on the Taguchi Method (다구찌 방법에 의한 유리-실리콘 양극접합 계면의 파괴인성치 측정 및 양극접합공정 조건에 따른 접합강도 분석)

  • Kang, Tae-Goo;Cho, Young-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.6
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    • pp.1187-1193
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    • 2002
  • Anodic bonding process has been quantitatively evaluated based on the Taguchi analysis of the interfacial fracture toughness, measured at the interface of anodically bonded silicon-glass bimorphs. A new test specimen with a pre-inserted blade has been devised for interfacial fracture toughness measurement. A set of 81 different anodic bonding conditions has been generated based on the three different conditions for four different process parameters of bonding load, bonding temperature, anodic voltage and voltage supply time. Taguchi method has been used to reduce the number of experiments required for the bonding strength evaluation, thus obtaining nine independent cases out of the 81 possible combinations. The interfacial fracture toughness has been measured for the nine cases in the range of 0.03∼6.12 J/㎡. Among the four process parameters, the bonding temperature causes the most dominant influence to the bonding strength with the influence factor of 67.7%. The influence factors of other process parameters, such as anodic voltage and voltage supply time, bonding load, are evaluated as 18%, 12% and 2.3%, respectively. The maximum bonding strength of 7.23 J/㎡ has been achieved at the bonding temperature of 460$\^{C}$ with the bonding load of 45gf/㎠, the applied voltage of 600v and the voltage supply time of 25minites.

Anodic bonding Characteristics of MLCA to Si-wafer Using Evaporated Pyrex #7740 Glass Thin-Films for MEMS Applications (파이렉스 #7740 유리박막을 이용한 MEMS용 MLCA와 Si기판의 양극접합 특성)

  • Chung, Gwiy-Sang;Kim, Jae-Min;Yoon, Suk-Jin
    • Journal of Sensor Science and Technology
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    • v.12 no.6
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    • pp.265-272
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    • 2003
  • This paper describes anodic bonding characteristics of MLCA (Multi Layer Ceramic Actuator) to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with same properties were deposited on MLCA under optimum RF magneto conditions(Ar 100%, input power $1\;W/cm^2$). After annealing in $450^{\circ}C$ for 1 hr, the anodic bonding of MLCA and Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in - 760 mmHg. Then, the MLCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity is 0.05-0.08 %FS. Moreover, any damages or separation of MLCA/Si bonded interfaces do not occur during actuation test. Therefore, it is expected that anodic bonding technology of MLCA/Si wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

Fabrication of Si Photodiode with Overlapped Anode (중첩된 양극 구조의 Si 포토다이오드 제작)

  • 장지근;조재욱;황용운
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.11a
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    • pp.214-217
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    • 2003
  • 상하로 양극 영역이 중첩된 새로운 Si 포토다이오드를 제작하고 이의 전기광학적 특성을 조사하였다. 제작된 소자의 역포화전류와 이상계수는 각각 68pA와 1.8로 나타났으며 -3V 바이어스에서 측정된 접합 커패시턴스는 8.3 pF로 나타났다. 또한 $100mW/cm^2$, AMI 스펙트럼 조건에서 -3V 바이어스 아래 측정된 광전류와 감도특성은 각각 $60\;{\mu}A$와 6 A/W로 나타났다.

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Corrosion mitigation of photovoltaic ribbon using a sacrificial anode (희생양극을 이용한 태양광 리본의 부식 저감)

  • Oh, Wonwook;Chan, Sung-Il
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.3
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    • pp.681-686
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    • 2017
  • Degradation is commonly observed in field-aged PV modules due to corrosion of the photovoltaic ribbon. The reduced performance is caused by a loss of fill factor due to the high series resistance in the PV ribbon. This study aimed to mitigate the degradation by corrosion using five sacrificial anodes - Al, Zn and their alloys - to identify the most effective material to mitigate the corrosion of the PV ribbon. The corrosion behavior of the five sacrificial anode materials were examined by open circuit potential measurements, potentiodynamic polarization tests, and galvanic current density and potential measurements using a zero resistance ammeter. Immersion tests for 120 hours were also conducted using materials and damp heat test tests were performed for 1500 hours using 4 cell mini modules. The Al-3Mg and Al-3Zn-1Mg sacrificial anodes had a low corrosion rate and reduced drop in power, making then suitable for long-term use.

The Finite Element Analysis of Foundation Layer by Introducing Interface Element (접합요소를 도입한 기초지반의 유한요소해석)

  • 양극영;이대재
    • Journal of the Computational Structural Engineering Institute of Korea
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    • v.15 no.1
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    • pp.9-20
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    • 2002
  • The purpose of this research is to develop computational procedures for studying nonlinear soil-structure interaction Problems. In orders to study soil-structure interaction behavior, the finite element analysis for the strip footing subjected to both vortical and lateral loads, and foundation layer reinforced with sheet pile are considered, interface elements are used between the footing and the soil to model the interaction behavior The main analyzed results are as follows; 1. For the prediction of settlement and lateral displacement, the result due to interface element was evaluated larger then without interface element. 2. For the determination of ultimate bearing capacity, the value using interface element appeared smaller by 12%, which was safe. 3. The horizontal and vertical displacement of strip footing affected by the presence of interface element.

Optical Assembly and Fabrication of a Micro-electron Column (마이크로 전자렌즈의 광학적 정렬과 조립)

  • Park, Jong-Seon;Jang, Won-Kweon;Kim, Ho-Seob
    • Korean Journal of Optics and Photonics
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    • v.17 no.4
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    • pp.354-358
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    • 2006
  • A silicon lens and an insulator of pyrex, components of a micro-electron column, should be assembled by aligning and stacking simultaneously. An optical alignment of a diffraction beam and a laser welding were employed for the assembly of a source lens and an Einzel lens with precision within $\pm$4% for the maximum aperture size. The experimental condition for optical alignment and laser welding are explained. Anodic bonding was used to assist in stacking lenses. A micro-electron column of smaller apertures assembled with precise alignment and fabrication was tested with a current image of a Cu grid of 9$\mu$m in linewidth, and showed a higher resolution in acceleration mode.

Fabrication of Microchanneled Reformer for Portable Fuel Cell (이동형 연료전지용 마이크로 채널 개질기 제작)

  • Yu, S.P.;Lim, S.D.;Lee, W.K.;Kim, C.S.
    • Transactions of the Korean hydrogen and new energy society
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    • v.16 no.4
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    • pp.350-355
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    • 2005
  • 소형 PEMFC(Proton Exchange Membrane Fuel Cell)는 전기를 만들기 위해서 고순도의 수소를 필요로 한다. 각각의 마이크로 성형된 금속박판(스테인레스 스틸, 알루미늄)을 진공 브레이징법으로 접합하여 수소공급용 소형 개질기를 제작하였다. 마이크로 채널의 내부는 졸-겔법(스테인레스 스틸)과 양극산화법(알루미늄)으로 촉매를 지지하기 위한 다공성 $Al_2O_3$ 층을 형성시켰다. 스테인레스 스틸 박판은 에칭과 브레이징에 유리하였으나, 표면산화층 코팅을 균일하게 하여 안정적인 촉매반응을 유도하기 위한 균일한 표면 산화층 형성이 힘들었다. 반면 알루미늄 박판은 표면 산화층 형성이 상대적으로 용이했으며, 촉매를 상하지 않는 낮은 온도에서의 적층이 가능했다.

비정질반도체 재료와 응용

  • 이정한
    • 전기의세계
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    • v.24 no.6
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    • pp.35-38
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    • 1975
  • 금속과 원소반도체의 접촉으로 이루어진 점접촉트란지스터를 출발점으로 한 P-N접합트란지스터는 4반세기동안 반도체전자 소자의 중심이었다. 이와 같은 반도체소자는 단결정반도체의 특성을 이용한 것으로 그 제작에 있어 거의 완전에 가까운 결정구조와 극도의 화학적순수성이 요구되는 것이다. 이와 같은 요구조건은 접합형 반도체소자제작에 큰 제한을 주게 된다. Gunn Diode, Impatt Diode등으로 반도체소자는 Bulk형식의 것이 각광을 받게 되었으며 MOS형식의 FET에 이르러 신기원을 이루게 되었다. 이리하여 MOS기술은 Sapphire기반을 도입함으로써 SOS기법으로 발전을 거듭하게 되었다. 그러나 정질반도체의 이용이라는 근본적 개념에서는 이탈치못하고 있다. 이상과 같은 정질반도체소자에 대응하여 반대적 입장에서 불순물농도의 영향이 적은 비정질반도체의 연구가 70년이후 미국을 중심으로 활발하게 전개되고 있다. 그 연구 및 개발결과는 2년마다 이루어지는 액체비정질반도체국제회의에서 종합되고 있다. 이 분야에서의 연구는 1968년 Ovshinsky가 비산화물 Chalcogenide glass 비정질박막에서의 빠른 응답속도의 양극대칭성 Switching 현상 발견을 계기로 신국면을 개척하게 된 것이다. 이들 비정질반도체에 대한 물성론적 흥미와 응용면에 관한 기대로부터 전도기구의 해명과 응용회로의 개발연구가 급속히 진전되고 있다.

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Improvement of Bonding Strength Uniformity in Silicon-on-glass Process by Anchor Design (Silicon-on-glass 공정에서 접합력 균일도 향상을 위한 고정단 설계)

  • Park, Usung;An, Jun Eon;Yoon, Sungjin
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.41 no.6
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    • pp.423-427
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    • 2017
  • In this paper, an anchor design that improves bonding strength uniformity in the silicon-on-glass (SOG) process is presented. The SOG process is widely used in conjunction with electrode-patterned glass substrates as a standard fabrication process for forming high-aspect-ratio movable silicon microstructures in various types of sensors, including inertial and resonant sensors. In the proposed anchor design, a trench separates the silicon-bonded area and the electrode contact area to prevent irregular bonding caused by the protrusion of the electrode layer beyond the glass surface. This technique can be conveniently adopted to almost all devices fabricated by the SOG process without the necessity of additional processes.