• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.49-52
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• 2006

Periodic electric field assisted poling low loss (${\sim}0.1dB/cm$) single-mode Ti-diffused waveguides in $LiNbO_3$ has been achieved using a periodically patterned electrode on the +Z surface of Ti : $LiNbO_3$ crystal and homogeneous LiCl solution. Using selective chemical etching, we confirmed the periodic (${\sim}16{\mu}m$) domain inverted structure and measured SH (second harmonic) properties of fabricated periodically poled Ti : $LiNbO_3$ waveguides.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.185-193
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• 1996

$2.5^{\circ}\;and\;5^{\circ}$ tilted (100) Si wafer were oxidized in dry oxygen, and the differences in thermal oxidation behavior and oxidation induced stacking faults (OSF) between specimens were investigated. Ellipsometer measurements of the oxide thickness produced by oxidation in dry oxygen from 900 to $1200^{\circ}C$ showed that the oxidation rates of the tilted (100) Si were more rapid than those of the (100) Si and the differences between them decreased as the oxidation temperature increased. The activation energies based on the parabolic rate constant, B for (100) Si, $2.5^{\circ}$ off (100) Si and $5^{\circ}$ off (100) Si were 27.3, 25.9, 27.6 kcal/mol and those on the linear rate constant, B/A were 58.6, 56.6, 57.6 kcal/mol, respectively. Also, considerable decrease in the density of oxidation induced stacking faults for the $5^{\circ}$ off (100) Si was observed through optical microscopy after preferentially etching off the oxide layer, and the angle of stacking faults were changed with tilted angles.