• Title/Summary/Keyword: 승화에너지

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근접승화법(CSS)을 통한 CdTe박막 형성시 용액성장법(CBD)으로 성장된 CdS박막의 특성 변화

  • Cheon, Seung-Ju;Jeong, Yeong-Hun;Kim, Ji-Hyeon;Kim, Dong-Hwan
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.70.3-70.3
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    • 2010
  • CBD 방법은 저비용으로 양질의 CdS 박막을 얻을 수 있는 증착 방법으로, 고효율의 CdS/CdTe 태양전지를 얻기에도 적당하다. 투명전도 산화막(Transparent Conducting Oxide - TCO)이 입혀진 유리 기판 위에 CBD 방식으로 형성된 CdS 박막은 추후 CdTe 박막형성을 위해 근접승화법(Close Spaced Sublimation - CSS) 장치에 기판으로 사용된다. 또한 추후 열처리공정을 겪게 되는데, 이때 고온 상태에 높여지기 때문에 CdS 박막의 물성에 변화를 나타나게 된다. 이를 XRD, Raman spectrometer, SEM, EDS, 등의 분석 장치를 이용하여 특성 변화를 분석 하고자 한다.

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The Embedded Atom Method Analysis of the Palldium (Palladium의 Embedded Atom Method 개발)

  • 정영관;김경훈;김세웅;이성희;이근진;박규섭
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2002.05a
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    • pp.652-655
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    • 2002
  • The embedded atom method based on the density functional theory is used for calculating ground state properties of realistic metal systems. In this paper, we had corrected constitutive formulae and parameters on the palladium for the purpose of doing Embedded Atom Method analysis. And then we have computed the properties of the palladium on the fundamental scale of the atomic structure. In result, simulated ground state properties, such as the lattice constant, elastics constants and the sublimation energy, show good agreement with Daw's simulation data and with experimental data.

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Characteristics of Kinetic Energy Transfer in Collisions Between Fragile Nanoparticle and Rigid Particle on Surface (승화성 나노 탄환입자와 표면위의 나노 고체입자의 충돌에서의 운동에너지 전달 특성)

  • Choi, Min Seok;Lee, Jin Won
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.38 no.7
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    • pp.595-600
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    • 2014
  • The characteristics of kinetic energy transfer during a collision between a rigid target particle on a surface and a fragile bullet particle moving at a high velocity were analyzed using molecular dynamics simulation. Bullet particles made of $CO_2$ were considered and their size, temperature, and velocity were varied over a wide range. The fraction of kinetic energy transferred from the bullet particle to the target particle was almost independent of the former's size or velocity; however, it was sensitively dependent on its temperature, which can be attributed to the change in the bullet rigidity with temperature. This fraction was nearly twice as high for $CO_2$ bullets as for Ar bullets. This result explains the reason for the more superior cleaning performance of $CO_2$ bullets than Ar bullets with regard to contaminants in the 10 nm size range.

The Embedded Atom Method Analysis of the Nickel (Nickel의 Embedded Atom Method 해석)

  • 정영관;김경훈;이근진;김종수
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1997.10a
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    • pp.572-575
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    • 1997
  • The embedded atom method based on density functional theory was developed as a new means for calculating ground state properties of realistic metal system by Murray S. Daw, Stephen M. Foiles and Michael I. Baskes. In the paper, we had corrected constitutive formulae and parameters on the nickel for the purpose of doing Embedded Atom Method analysis. And then we have computed the properties of the nickel on the fundamental scale of the atomic structure. In result, simulated ground state properties, such as the lattice constant, elastics constants and sublimation energy, show good agreement with Daw's simulation data and with experimental data.

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The Analysis of CdS and CdTe Thin Film at the Processes of Manufacturing CdTe Solar Cells (CdTe 태양전지 제조 공정에 따라 변화하는 CdS와 CdTe 박막의 물성 변화 분석)

  • Chun, Seungju;Jung, Younghun;Choi, Suyoung;Tark, Sung Ju;Kim, Jihyun;Kim, Donghwan
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.106.2-106.2
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    • 2011
  • 다층 박막 구조로 이루어진 CdS/CdTe 태양전지의 경우, 각각의 박막이 다양한 제조 공정을 거치면서 물성특성의 변화를 겪게 된다. 각각의 박막이 고온의 열처리 공정과, $CdCl_2$ 용액 처리 및 후면 산화막 제거 공정 등을 거치게 되면서 겪게 되는 물성 변화 분석을 살펴보고자 한다. 각각의 박막 제조 방식은 일반적으로 사용되는 방식으로, CdS의 경우는 용액성장법(Chemical Bath Deposition, CBD), CdTe의 경우는 근접승화법(Closed Space Sublimaition, CSS)을 사용했으며, X-Ray Diffractometer (XRD), Raman spectroscopy, Field Emission Scanning Electron Microscope (FE-SEM), Energy Dispersive Spectroscopy (EDS), X-ray Photoelectron Spectroscopy (XPS) 등을 이용하여 분석하였다. 각각의 셀 제조 공정을 거치면서 CdS, CdTe 박막들은 결정, 광 특성, 성분 변화를 보였다.

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Heat and Mass Transfer in Highly Porous Media (고 다공성 물질에서 열 및 물질전달)

  • 이금배
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.14 no.3
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    • pp.685-693
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    • 1990
  • The heat transfer coefficients were calculated numerically to see the effects of radiation around the porous medium put on the flat plate at a distance from the leading edge of flat plate for the two-dimensional laminar flows. To verify the analytical model developed and invoke the heat/mass transfer analogy, an experiment was carried out using naphthalene sublimation technique. From the effects of the wake, Sherwood number is maximum around the region where the porous medium is attached. The theoretical results correspond well with the experimental results at small Darcy number. Permeability of ceramic blocks used for experiment was also measured and the Forchheimer equation is applicable in our measurement range.

Numerical analysis of inductively coupled plasma assisted duplex deposition system (유도 결합 플라즈마를 이용한 스퍼터, 증발 복합 증착 시스템의 수치 해석)

  • Ju, Jeong-Hun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.05a
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    • pp.147-147
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    • 2012
  • 스퍼터링을 이용한 증착 시스템은 인가된 전력의 대부분이 타겟의 가열에 사용되어 에너지 효율이 낮다는 단점이 있고, 저항 가열을 이용한 증발 증착 시스템은 대전류를 필요로 하고 증발 물질이 보트 물질과 반응하지 말아야 한다는 제약이 있고 질화물을 형성하는 반응성 프로세스에서 증발량을 일정하게 조절하기 어렵다. 두 가지 공정의 장점을 살린 스퍼터-승화 시스템을 고안하고 이를 위한 수치 해석을 CFD-ACE+를 이용하여 실시하였다.

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Growth of 6H-SiC Single Crystals by Sublimation Method (승화법에 의한 6H-SiC 단결정 성장)

  • 신동욱;김형준
    • Korean Journal of Crystallography
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    • v.1 no.1
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    • pp.19-28
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    • 1990
  • 6H-SiC is a promising material (Eg=3.0eV) for blue light-emitting doide and high-temperature semiconducting device. In the experiment, single crystals of a-SiC have been grown by the sublimation method to fabricate blue light~emitting diode. During the growth of a-SiC single crystals, a temperature Vadient, yonh temperature and pressure ranges were kept 44℃/cm , 1800-1990℃ and 50-1000 mTorr, respectively. Single crystals obtained in Acheson furnace were used as seed crystals. Polarizing microscopy and back-reflection X-ray Laue diffraction showed that the a-SiC crystal was epitaxially and on the seed crytal. It was found by XRD analysis that when other growth conditions were the same, a-SiC was grown at the temperature above 1840℃ and 3C-SiC was gown at lower temperature or under low supersaturation of vapor. The carrier type. concentration and mobility were measured be hole(p-type), 7.6x1014cm-3 and 19cm2V-1sec-1, respectively, by van der Pauw method.

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