• Title/Summary/Keyword: 습식산화법

검색결과 75건 처리시간 0.025초

Supercritical Water Oxidation of Anionic Exchange Resin (초임계수 산화를 이용한 음이온교환수지 분해)

  • Han, Joo-Hee;Han, Kee-Do;Do, Seung-Hoe;Kim, Kyeong-Sook;Son, Soon-Hwan
    • Journal of Korean Society of Environmental Engineers
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    • 제28권5호
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    • pp.549-557
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    • 2006
  • The characteristics of supercritical water oxidation have been studied to decompose the waste anionic exchange resins which were produced from a power plant. The waste resins from a power plant were mixture of anionic and cationic exchange resins. The waste anionic exchange resins had been separated from the waste resins using a solid-liquid fluidized bed. It was confirmed that the cationic exchange resins were not included in the separated anionic exchange resins by the elemental and thermogravimetric analysis. A slurry of anionic exchange resins which could be fed continuously to a supercritical water oxidation apparatus by a high pressure pump was prepared using a wet ball mill. Although the COD of liquid effluent had been reduced more than 99.9% at 25.0 MPa and $500^{\circ}C$ within 2 min, the total nitrogen content was reduced only 41%. The addition of nitric acid to the slurry could reduce the total nitrogen content in treated water. The central composite design as a statistical desist of experiments had been applied to optimize the conditions of decomposing anionic resin slurry by means of the COD and total nitrogen contents in treated waters as the key process output variables. The COD values of treated waters had been reduced sufficiently to $99.9{\sim}100%$ af the reaction conditions of $500{\sim}540^{\circ}C$, 25.0 MPa within 2 min. The effects of temperature and nitric acid concentration on COD were not significant. However, the effect of nitric acid concentration on the total nitrogen was found to be significant. The regression equation for the total nitrogen had been obtained with nitric acid concentration and the coefficient of determination($r^2$) was 95.8%.

Continuous Wet Oxidation of TCE over Supported Metal Oxide Catalysts (금속산화물 담지촉매상에서 연속 습식 TCE 분해반응)

  • Kim, Moon Hyeon;Choo, Kwang-Ho
    • Korean Chemical Engineering Research
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    • 제43권2호
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    • pp.206-214
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    • 2005
  • Heterogeneously-catalyzed oxidation of aqueous phase trichloroethylene (TCE) over supported metal oxides has been conducted to establish an approach to eliminate ppm levels of organic compounds in water. A continuous flow reactor system was designed to effect predominant reaction parameters in determining catalytic activity of the catalysts for wet TCE decomposition as a model reaction. 5 wt.% $CoO_x/TiO_2$ catalyst exhibited a transient period in activity vs. on-stream time behavior, suggesting that the surface structure of the $CoO_x$ might be altered with on-stream hours; regardless, it is probable to be the most promising catalyst. Not only could the bare support be inactive for the wet decomposition reaction at $36^{\circ}C$, but no TCE removal also occurred by the process of adsorption on $TiO_2$ surface. The catalytic activity was independent of all particle sizes used, thereby representing no mass transfer limitation in intraparticle diffusion. Very low TCE conversion appeared for $TiO_2$-supported $NiO_x$ and $CrO_x$ catalysts. Wet oxidation performance of supported Cu and Fe catalysts, obtained through an incipient wetness and ion exchange technique, was dependent primarily on the kinds of the metal oxides, in addition to the acidic solid supports and the preparation routes. 5 wt.% $FeO_x/TiO_2$ catalyst gave no activity in the oxidation reaction at $36^{\circ}C$, while 1.2 wt.% Fe-MFI was active for the wet decomposition depending on time on-stream. The noticeable difference in activity of the both catalysts suggests that the Fe oxidation states involved to catalytic redox cycle during the course of reaction play a significant role in catalyzing the wet decomposition as well as in maintaining the time on-stream activity. Based on the results of different $CoO_x$ loadings and reaction temperatures for the decomposition reaction at $36^{\circ}C$ with $CoO_x/TiO_2$, the catalyst possessed an optimal $CoO_x$ amount at which higher reaction temperatures facilitated the catalytic TCE conversion. Small amounts of the active ingredient could be dissolved by acidic leaching but such a process gave no appreciable activity loss of the $CoO_x$ catalyst.

A study of dry cleaning for metallic contaminants on a silicon wafer using UV-excited chlorine radical (UV-excited chlorine radical을 이용한 실리콘 웨이퍼상의 금속 오염물의 건식세정에 관한 연구)

  • 손동수;황병철;조동률;김경중;문대원;구경완
    • Journal of the Korean Vacuum Society
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    • 제6권1호
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    • pp.9-19
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    • 1997
  • The reaction mechanisms of dry cleaning with UV-excited chlorine radical for Zn, Fe and Ti trace contaminants on the Si wafer have been studied by SEM, AFM and XPS analyses in this work. The patterned Zn, Fe and Ti films were deposited on the Si wafer surface by thermal evaporation and changes in the surface morphology after dry cleaning with $Cl_2$and UV/$Cl_2$at $200^{\circ}C$ were studied by optical microscopy and SEM. In addition, changes in the surface roughness of Si wafer with the cleaning was observed by AFM. The chemical bonding states of the Zn, Fe and Ti deposited silicon surface were observed with in-line XPS analysis. Zn and Fe were easily cleaned in the form of volatile zinc-chloride and iron-chloride as verified by the surface morphology changes. Ti which forms involatile oxides was not easily removed at room temperature but was slightly removed by UV/$Cl_2$at elevated temperature of $200^{\circ}C$. It was also found that the surface roughness of the Si wafer increased after $Cl_2$and UV/$Cl_2$cleaning. Therefore, the metallic contaminants on the Si wafer can be easily removed at lower temperature without surface damage by a continuous process using wet cleaning followed by UV/$Cl_2$dry cleaning.

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Optimum Condition of Soil Dispersion for Remediating Heavy Metal-Contaminated Soils using Wet Magnetic Separation (중금속 오염 토양 정화를 위한 습식자력선별법 사용 시 최적 토양분산 조건)

  • Chon, Chul-Min;Park, Jeong-Sik;Park, Sook-Hyun;Kim, Jae-Gon;Nam, In-Hyun
    • Economic and Environmental Geology
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    • 제45권2호
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    • pp.121-135
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    • 2012
  • Soil dispersion and heavy metal leaching with two heavy metal-contaminated soils were studied to derive the optimal dispersion condition in the course of developing the remedial technology using magnetic separation. The dispersion solutions of pyrophosphate, hexametaphosphate, orthophosphate and sodium dodecylsulfate (SDS) at 1 - 200 mM and the pH of solutions was adjusted to be 9 - 12 with NaOH. The clay content of suspension as an indicator of dispersion rate and the heavy metal concentration of the solution were tested at the different pHs and concentrations of the dispersion solution during the experiment. The dispersion rate increased with increasing the pH and dispersion agent concentration of the solution. The dispersion efficiency of the agents showed as follows: pyrophosphate > hexametaphosphate > SDS > orthophosphate. Arsenic leaching was sharply increased at 50 mM of phosphates and 100 mM of SDS. The adsorption of $OH^-$, phosphates and dodecysulfate on the surface of Fe- and Mn-oxides and soil organic matter and the broken edge of clay mineral might decrease the surface charge and might increase the repulsion force among soil particles. The competition between arsenic and $OH^-$, phosphates and dodecylsulfate for the adsorption site of soil particles might induce the arsenic leaching. The dispersion and heavy metal leaching data indicate that pH 11 and 10 mM pyrophosphate is the optimum dispersion solution for maximizing dispersion and minimizing heavy metal leaching.

Direct bonding of Si(100)/Si$_3$N$_4$∥Si (100) wafers using fast linear annealing method (선형열처리를 이용한 Si(100)/Si$_3$N$_4$∥Si (100) 기판쌍의 직접접합)

  • Lee, Young-Min;Song, Oh-Song;Lee, Sang-Hyun
    • Korean Journal of Materials Research
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    • 제11권5호
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    • pp.427-430
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    • 2001
  • We prepared 10cm-diameter Si(100)/500 $\AA$-Si$_3$N$_4$/Si(100) wafer Pairs adopting 500 $\AA$ -thick Si$_3$N$_4$layer as insulating layer between single crystal Si wafers. Si3N, is superior to conventional SiO$_2$ in insulating. We premated a p-type(100) Si wafer and 500 $\AA$ -thick LPCVD Si$_3$N$_4$∥Si (100) wafer in a class 100 clean room. The cremated wafers are separated in two groups. One group is treated to have hydrophobic surface and the other to have hydrophilic. We employed a FLA(fast linear annealing) bonder to enhance the bond strength of cremated wafers at the scan velocity of 0.1mm/sec with varying the heat input at the range of 400~1125W. We measured bonded area using a infrared camera and bonding strength by the razor blade crack opening method. We used high resolution transmission electron microscopy(HRTEM) to probe cross sectional view of bonded wafers. The bonded area of two groups was about 75%. The bonding strength of samples which have hydrophobic surface increased with heat input up to 1577mJ/$m^2$ However, bonding strength of samples which have hydrophilic surface was above 2000mJ/$m^2$regardless of heat input. The HRTEM results showed that the hydrophilic samples have about 25 $\AA$ -thick SiO layer between Si and Si$_3$N$_4$/Si and that maybe lead to increase of bonding strength.

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