• Journal of the Korean Ceramic Society
• /
• v.37 no.7
• /
• pp.686-692
• /
• 2000

Tin-doped In2O3 (ITO) films were fabricated using a d.c. magnetron reactive sputteirng of a In-10 wt% Sn alloy target in an Ar and O2 gas mixture. To understand the behavior of the carrier mobility in ITO films with O2 partial pressure, the resistivity, carrier concentration and mobility, film density, and intrinsic stress in the films were measured with O2 partial pressure. It was found experimentally that the carrier mobility increased rapidly as the film density increased. In the ITO film with the density close to theoretical one, the mean free path was the same as the columnar diameter. This indicated that the mobility in ITO films was strongly influenced by the crystall size. However, in the case where the film density was smaller than a theoretical density, the mean free paths were also smaller the columnar diameter. It was analyzed that the electron scattering at pores and holes within the crystalline was the major obstacle for electron conduction in ITO films. The measurement of intrinsic stress in ITO films also made it clear that the density of ITO films was controlled by the bombardment of oxygen neutrals on the growing film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.217-220
• /
• 2000

The SrBi$_2$Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF sputtering method. The SBT thin films deposited on substrate at 400-500[$^{\circ}C$]. SBT thin film deposited on Pt-coated electrodes have the cubic perovskite structure and polycrystalline state. With increasing annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], flourite phase was crystallized to 650[。 and Bi-layered perovskite phase was crystallize ed above 700[$^{\circ}C$]. The maximum remnant polarization and the coercive electric field is 11.73[${\mu}$C/$\textrm{cm}^2$], 85[kV/cm] respectively at annealing temperature of 750[$^{\circ}C$]. The fatigue characteristics of SBT thin films deposited on Pt/TiO$_2$/SiO$_2$/Si substrate did not change up to 10$\^$10/ switching cycles.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.2
• /
• pp.93-99
• /
• 1996

In this work BN thin films were deposited on Si substrate by R. F. sputtering method at $200^{\circ}C$ and in Ar + $N_2$ mixed gas atmosphere. In order to investigate the effect of ion bombardment on substrate for c-BN bonding, substrate bias voltage was applied. The optimum substrate bias voltage for c-BN bonding was determined by FTIR analysis on specimens which were deposited with various bias voltages. Then BN thin film was deposited with this optimum condition and its phase, morphology, chemical composition, and refractive index were compared with those of BN film which was deposited without bias voltage. FTIR results showed that BN films deposited with substrate bias voltage were composed of mixed phases of c-BN and h-BN, while those deposited without bias voltage were h-BN only. When pure Ar gas was used for sputtering gas, BN films were delaminated easily from substrate in air, while when 10% $N_2$ gas was added to the sputtering gas, although c-BN specific infrared peak was reduced, delamination did not occur. GXRD and TEM results showed that BN films were amorphous phases regardless of substrate bias voltage, and AES results showed that the chemical compositions of B/N were about 1.7~1.8. The refractive index of BN film deposited with bias voltage was higher than that without bias voltage. The reason is believed to be the existence of c-BN bonding in BN film and the higher density of film that deposited with the substrate bias voltage.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2012.05a
• /
• pp.275-275
• /
• 2012

실용금속 중 가장 경량이고, 치수 안정성, 절삭성 등이 우수한 Mg과 각종 산업의 구조물, 전기전자 부품 등의 분야에서 방식용 코팅 제품으로 많이 사용되고 있는 Zn를 혼합박막으로 Zn-Mg 박막을 제작하였다. 또한 여기서는 모재와 Zn-Mg 박막 사이에 결합력 강화를 위하여 Al중간층을 삽입하고 (Zn-Mg)/Al 박막을 제작하였다. 이와 같이 혼합박막을 제작하는 것은 Zn, Mg, Al 등과 같은 단일박막의 밀착성과 내식성의 한계를 극복-향상시키기 위한 것이었다. 한편, 이와 유사한 혼합박막에 많이 사용되고 있는 희생양극의 성분적인 측면이나 구조적인 분석에 있어서는 연구의 진척이 많이 이루어지고 있지만, 밀착성과 내식성의 상관관계의 규명에 있어서는 기초 단계이다. 따라서 본 연구에서는 여러 가지 증착 조건에 따라 제작한 막에 대한 표면 몰포로지, 결정배향성, 밀착성과 내식성에 미치는 영향을 분석하여 이들의 상관관계를 규명함은 물론 Al 중간층의 유무에 따른 서로간의 특성을 분석하였다. 분석결과에 의하면 Zn, Mg, Al 단일박막과 Zn-Mg 혼합박막에 비해 Al 중간층을 삽입한 (Zn-Mg)/Al이 내식성은 물론 밀착성이 우수하게 나타났다.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2012.05a
• /
• pp.205-206
• /
• 2012

$InSbO_4$ (Indium antimony oxide) 박막을 RF 마그네트론 스퍼터링법을 이용하여 $SiO_2$가 코팅된 Si wafer ($SiO_2/Si$) 기판 또는 $400^{\circ}C$에서 융해된 석영 유리 (silica glass) 기판 위에 증착시켰다. 고결정성과 화학양론의 $InSbO_4$ 막을 증착시키기에 최적화된 조성의 $In_{0.2x}Sb_{0.3x}O_x$ 타겟을 이용하여 Ar과 $O_2$ 혼합 가스 분위기에서 스퍼터링 증착을 수행하였다. $InSbO_4$ 막은 가시광 영역에서 80%이상의 투과도를 보였고, $400^{\circ}C$에서 $1100^{\circ}C$사이의 어닐링 온도에서는 $InSbO_4$ 막의 전기적 성질이 높은 고온 내구성을 가지는 것을 알 수 있었다. 그러나 $1200^{\circ}C$ 이상의 어닐링 온도에서는 새로운 $Sb_2O_4$ 상의 분리로 인해 $InSbO_4$ 막의 비저항이 급격히 증가하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.718-721
• /
• 2004

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode$(Pt/TiN/SiO_2/Si)$ using RF sputtering method at various substrate temperature. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of $100\sim500[^{\circ}C]$. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of $-80\sim+190[^{\circ}C]$. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.10a
• /
• pp.42.1-42.1
• /
• 2011

박막형 디스플레이구서에 있어서 투명전극은 필수적이다. 투명전극은 정보를 표시하기 위해 빛을 외부로 방출시키거나 태양광 등을 소자 내부로 입사시켜야 한다. 또한 전극을 형성하는 박막은 높은 광투과율과 ${\sim}10-4{\Omega}cm$ 정도의 낮은 전기비저항을 가져야 한다. 가장 널리 사용되는 투명전극으로 ITO (Indium Tin Oxide)는 인듐의 독성, 저온증착의 어려움, 스퍼터링시 음이온 충격에 의한 막 손상으로 저항의 증가 및 액정디스플레이의 투명전극으로 사용될 경우 $400^{\circ}C$정도의 높은 온도와 수소플라즈마 분위기에서 장시간 노출시 열화로 인한 광학적 특성변화가 문제로 지적된다. 이러한 문제 해결의 대안으로 ZnO 산화물 반도체가 있는데 ITO 박막에 비해 비저항이 높기 때문에 도핑을 이용한 비저항을 ${\sim}10-4{\Omega}cm$ 정도로 낮추어야 한다. 투명전도막으로는 ITO, FTO 등과 더블어 체적 저항율은 다소 높으나 환원성 분위기에 대한 내성, 가시광 영역에서의 높은 광투과율과 저렴한 가격 등의 장점 등으로 AZO 박막이 주목 받고 있다. ZnO는 ITO 나 FTO에 비해서 700 kJ/mol의 큰 분해에너지를 가지므로 코팅 때 발생하는 전도도 및 투과율이 나빠지는 현상이 발생하지 않는 특징이 있으며, 위의 두 재료에 비해 밴드갭도 가장 낮아서 자외선 투과율이 낮다. 그러나 내습성이 약하기 때문에 이를 보완하기 위하여 내습성향상과 전도성 향상을 위해서 3족 원소인 B, In, Al, Ga 등을 도핑한 ZnO 투명전도막의 연구가 진행되고 있다. 이러한 원소들 중에서 Al로 도핑했을 때 가장 낮은 비저항을 얻을 수 있다고 알려져 있다. 본 연구에서는 SiOC 박막위에 AZO 박막을 제조하기 위하여 RF 마그네트론 스퍼터링법을 이용하여 박막을 성장시켰으며, 박막의 전기적 및 광학적 특성을 조사하였다. AZO 박막은 rf power가 5~200 W인 RF 마그네트론 스퍼터 방법에 의해서 제작되었다. SiOC 박막은 산소와 DMDMOS 전구체의 유량비를 다르게 하여 플라즈마 발생 화학적 기상 증착방법으로 증착되었다. 증착된 SiOC박막은 UV visible spectroscopy에 의해서 분석하였다. 투명전극의 비저항은 rf 전력이 작을 수록 낮았으며, SiOC 절연막 위에 AZO를 증착시킨 후 반사률은 반대로 바뀌는 것을 확인하였다.

• Korean Chemical Engineering Research
• /
• v.46 no.4
• /
• pp.676-680
• /
• 2008

TiN thin films were deposited on a $SiO_2(2000{\AA})/Si$ substrate by radio-frequency(rf) magnetron sputtering. TiN films were prepared under varying $N_2$ concentration in $N_2/Ar$ gas mix, rf power and gas pressure, and investigated in terms of deposition rate, resistivity and surface morphology. As $N_2$ concentration increased, the deposition rate and the surface roughness of the films decreased and the resistivity increased. With increasing rf power, the deposition rate increased but the resistivity was decreased. As gas pressure increased, little change in deposition rate was obtained but the resistivity rapidly increased. TiN film with resistivity of $2.46{\times}10^{-4}{\Omega}cm$ at 1 mTorr was formed. It was observed that there existed a correlation between the deposition rate and resistivity. In particular, the gas pressure has a strong influence on the resistivity of thin films.

• Journal of Sensor Science and Technology
• /
• v.6 no.1
• /
• pp.49-55
• /
• 1997

ZnO thin film had been deposited on the glass by sputtering method, and investigated by optical and electrical properties. When the rf power was 180W and sputtering pressure was $1{\times}10^{-3}$Torr at room temperature, thin lam deposited had strongly oriented c-axis and the lowest resistivity($1{\times}10^{-4}{\Omega}{\cdot}cm$), and then carrier concentration and Hall mobility were $6.27{\times}10^{20}cm^{-3}$ and $22.04cm^{2}/V{\cdot}s$, respectively. Transmittance of ZnO thin film in visible range was above 90%, and this thin film cut of the ultraviolet range below 320nm and the infrared range above 850nm. And after annealing in hydrogen atmosphere, the resistivity of ZnO thin film was somewhat decreased, while obtained as stable state.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2012.05a
• /
• pp.734-736
• /
• 2012

Cadmium telluride (CdTe) films have been prepared on Corning 7059 glass, molybdenum (Mo), and polyimide (PI) substrates by r.f. magnetron sputtering technique. The influence of the sputter pressure on the structural and optical properties of these films was evaluated. In addition, a comparison of the properties of the films deposited on fferent substrates was performed.